I-SiC yokwambathisa igraphite MOCVD abathwali beWafer, iiGraphite Susceptors zeSiC Epitaxy

Inkcazelo emfutshane:

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing. I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye neendawo ezinkulu kakhulu.

Indawo yemvelaphi:E-Zhejiang, eTshayina (eMaphandleni)

Inombolo yoMfanekiso:Inombolo yoMfanekiso:

Ukuqulunqwa kwemichiza:I-SiC eqatywe igraphite

Amandla e-Flexural:470Mpa

I-Thermal conductivity:300 W/mK

Umgangatho:Igqibelele

Umsebenzi:CVD-SiC

Isicelo:Semiconductor / Photovoltaic

Ubuninzi:3.21 g/cc

Ukwandiswa kweThermal:4 10-6/K

Uthuthu: <5ppm

Isampulu:Iyafumaneka

Ikhowudi ye-HS:6903100000

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-SiC yokwambathisa igraphite MOCVD abathwali beWafer, iiGraphite Susceptors zeSiC Epitaxy,
Ikhabhoni ibonelela ngezinto ezixhaphakileyo, I-graphite epitaxy susceptors, Ii-substrates zeGraphite zenkxaso, I-MOCVD Susceptor, SiC Epitaxy, I-Wafer Susceptors,

Izinto eziluncedo ezikhethekileyo ze-SiC-coated graphite susceptors ziquka ukucoceka okuphezulu kakhulu, ukugquma okulinganayo kunye nobomi benkonzo obugqwesileyo. Kananjalo banokumelana neekhemikhali eziphezulu kunye neempawu zokuzinza kwe-thermal.

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.
I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye neendawo ezinkulu kakhulu.

I-SiC yokwaleka / i-MOCVD igqunywe Susceptor

Iimbonakalo:
· Okugqwesileyo kweThermal Shock Resistance
· Okugqwesileyo koKuxhathisa ukothuka koMzimba
· Ukumelana neMichiza okugqwesileyo
· Ukucoceka okuphezulu okuphezulu
· Ukufumaneka kobume obuntsonkothileyo
· Isetyenziswa phantsi kwe-Oxidizing Atmosphere

Isicelo:

Iinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGrafite:

Uxinzelelo olubonakalayo:	1.85 g/cm3
Ukuxhathisa koMbane:	11 μΩm
Ukuqina kweFlexural:	49 MPa (500kgf/cm2)
Ukuqina konxweme:	58
Uthuthu:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

Ikhabhoni ibonelela ngezinto ezixhaphakileyokunye namacandelo egraphite kuzo zonke ii-reactors zangoku ze-epitaxy. Ipotfoliyo yethu ibandakanya i-barrel susceptors kwi-application kunye neeyunithi ze-LPE, i-pancake susceptors ye-LPE, i-CSD, kunye neeyunithi ze-Gemini, kunye ne-wafer-wafer susceptors kwi-application kunye neeyunithi ze-ASM. Ngokudibanisa intsebenziswano eqinile kunye nee-OEM ezikhokelayo, ubuchule bezinto eziphathekayo kunye nolwazi lokuvelisa, i-SGL. inikeza uyilo olulolona lufanelekileyo lwesicelo sakho.