I-SiC Coated Graphite Carriers, i-sic yokugquma, i-SiC egqunywe nge-Graphite substrate yeSemiconductor

I-silicon carbide ifakweidisk yegraphite kukulungisa umaleko okhuselayo wesilicon carbide kumphezulu wegraphite ngokufaka umphunga womzimba okanye wekhemikhali kunye nokutshiza. I-silicon carbide elungiselelwe umaleko okhuselayo unokubotshelelwa ngokuqinileyo kwi-matrix yegraphite, yenza umphezulu wesiseko segraphite ube xinene kwaye ungabina-voids, unika iipropathi ezikhethekileyo ze-graphite matrix, kubandakanya ukuxhathisa kwe-oxidation, ukuxhathisa kwe-asidi kunye ne-alkali, ukuxhathisa ukhukuliseko, ukuxhathisa ukubola, njl. Okwangoku, i-Gan coating yenye yezona zinto zibalulekileyo zokukhula kwe-epitaxial ye-silicon carbide.

I-Silicon carbide semiconductor yeyona nto iphambili kwisemiconductor esandula ukuphuhliswa kwebhendi ebanzi. Izixhobo zayo zineempawu zokumelana nobushushu obuphezulu, ukuxhathisa amandla ombane aphezulu, amaza ombane aphezulu, amandla aphezulu kunye nokumelana nemitha. Ineenzuzo zesantya sokutshintsha ngokukhawuleza kunye nokusebenza okuphezulu. Inokunciphisa kakhulu ukusetyenziswa kwamandla emveliso, ukuphucula ukuguqulwa kwamandla kunye nokunciphisa umthamo wemveliso. Isetyenziswa kakhulu kunxibelelwano lwe-5g, ukhuselo lwesizwe kunye neshishini lomkhosi Ibala leRF elimelwe yi-aerospace kunye necandelo lombane lombane elimelwe zizithuthi zamandla amatsha kunye "neziseko ezitsha ezisisiseko" zinethemba elicacileyo nelibonakalayo lemarike kumacandelo oluntu nawomkhosi.

I-Silicon carbide substrate yeyona nto ingundoqo ye-gap semiconductor entsha esandula ukwenziwa. I-Silicon carbide substrate isetyenziswa ikakhulu kwi-electronics microwaves, i-electronics yamandla kunye namanye amacandelo. Ingaphambili kwisiphelo se-wide band gap semiconductor industry chain kwaye iyona nto iphambili kunye nesiseko sezinto eziphambili.I-Silicon carbide substrate inokwahlulwa ibe ziindidi ezimbini: i-semi-insulating kunye ne-conductive. Phakathi kwazo, i-semi-insulating silicon carbide substrate ine-resistivity ephezulu (i-resistivity ≥ 105 Ω· cm). I-semi insulating substrate edityaniswe ne-heterogeneous gallium nitride epitaxial sheet ingasetyenziswa njengesixhobo se-RF, esetyenziswa ikakhulu kunxibelelwano lwe-5g, ukhuselo lwesizwe kunye neshishini lomkhosi kule miboniso ingentla; Enye i-conductive silicon carbide substrate ene-resistivity ephantsi (uluhlu lokumelana ne-15 ~ 30m Ω· cm). I-epitaxy ye-homogeneous ye-silicon carbide substrate kunye ne-silicon carbide ingasetyenziswa njengezinto zezixhobo zamandla. Iimeko eziphambili zesicelo zizithuthi zombane, iinkqubo zamandla kunye nezinye iindawo