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Iziseko ezisetyenziswa ngokuqhelekileyo kwi-epitaxy yesigaba somphunga
ngu admin nge 24-07-30
Ngethuba lenkqubo ye-vapor phase epitaxy (VPE), indima ye-pedestal kukuxhasa i-substrate kunye nokuqinisekisa ukufudumeza okufanayo ngexesha lokukhula. Iindidi ezahlukeneyo zeepedestal zifanelekile kwiimeko ezahlukeneyo zokukhula kunye neenkqubo zezinto eziphathekayo. Ezi zilandelayo zezinye...
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Indlela yokwandisa ubomi benkonzo yeemveliso ezigqunywe nge-tantalum carbide?
ngu admin on 24-07-26
Iimveliso ezigqunywe ngeTantalum carbide zizinto ezisetyenziswa ngokuqhelekileyo ubushushu obuphezulu, obubonakaliswa ngokuxhathisa ubushushu obuphezulu, ukuxhathisa ukugqwala, ukumelana nokunxiba, njl. Ngoko ke, zisetyenziswa ngokubanzi kumashishini afana ne-aerospace, iikhemikhali kunye namandla. Ukuze ex...
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Yintoni umahluko phakathi kwe-PECVD kunye ne-LPCVD kwisixhobo se-semiconductor CVD?
ngu admin on 24-07-24
I-Chemical vapor deposition (CVD) ibhekisa kwinkqubo yokufaka ifilimu eqinileyo kumphezulu we-silicon wafer ngokusabela kwekhemikhali yomxube werhasi. Ngokweemeko ezahlukeneyo zokusabela (uxinzelelo, isandulela), inokwahlulwa ngokwezixhobo ezahlukeneyo...
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Iimpawu ze-silicon carbide graphite mold
ngu admin on 24-07-18
I-Silicon Carbide Graphite Mold I-Silicon carbide graphite mold yimbumba edibeneyo kunye ne-silicon carbide (SiC) njengesiseko kunye negraphite njengento yokuqinisa. Lo ngundo unokuqhuba kakuhle kwe-thermal, ukuxhathisa ubushushu obuphezulu, ukuxhathisa kwi-corrosion kunye ...
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Inkqubo ye-Semiconductor epheleleyo inkqubo ye-photolithography
ngu admin on 24-07-16
Ukuveliswa kwemveliso nganye ye-semiconductor kufuna amakhulu eenkqubo. Sahlula yonke inkqubo yokuvelisa ibe ngamanyathelo asibhozo: iwafer processing-oxidation-photolithography-etching-thin film deposition-epitaxial growth-diffusion-ion implantation. Ukukunceda...
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4 yeebhiliyoni! I-SK Hynix ibhengeza utyalo-mali lokupakisha oluphucukileyo lwe-semiconductor kwiPaki yoPhando lwasePurdue
ngu admin on 24-07-09
I-West Lafayette, e-Indiana - i-SK hynix Inc. ibhengeze izicwangciso zokutyala imali ephantse ibe yi-4 yeebhiliyoni zeerandi ukuze kwakhiwe imveliso yokupakisha ephucukileyo kunye neziko le-R&D yeemveliso zobukrelekrele bokwenziwa ePurdue Research Park. Ukuseka ikhonkco eliphambili kwikhonkco lokubonelela nge-semiconductor yase-US eWest Lafayett...
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Itekhnoloji yeLaser ikhokelela kutshintsho lwe-silicon carbide substrate processing technology
ngu admin on 24-07-08
1. Isishwankathelo se-silicon carbide substrate processing technology Amanyathelo okucubungula akhoyo e-silicon carbide substrate abandakanya: ukugaya isangqa sangaphandle, ukusika, ukuhlambalaza, ukugaya, ukupolisha, ukucoca, njl.
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Izinto eziphambili ze-thermal field: C / C izinto ezidibeneyo
ngu admin nge 24-07-01
I-carbon-carbon composites luhlobo lwe-carbon fiber composites, kunye ne-carbon fiber njengento yokuqinisa kunye nekhabhoni efakwe njenge-matrix. I-matrix ye-C / C ye-composites yikhabhoni. Kuba iphantse yaqulunqwa ngokupheleleyo yi-carbon elemental, inokumelana nobushushu obuphezulu ...
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Iindlela ezintathu eziphambili zokukhula kwekristale ye-SiC
ngu admin nge 24-07-01
Njengoko kubonisiwe kumfanekiso wesi-3, kukho iindlela ezintathu eziphambili ezijolise ekuboneleleni i-crystal eyodwa ye-SiC kunye nomgangatho ophezulu kunye nokusebenza kakuhle: i-epitaxy yesigaba solwelo (i-LPE), ukuthuthwa komphunga womzimba (PVT), kunye ne-high-temperature ye-chemical vapor deposition (HTCVD). I-PVT yinkqubo esekwe kakuhle yokuvelisa isono se-SiC...
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