Wamkelekile kwiwebhusayithi yethu ngolwazi lwemveliso kunye nokubonisana.
Iwebhusayithi yethu:https://www.vet-china.com/
Ukufakwa kwePoly kunye neSiO2:
Emva koku, i-Poly engaphezulu kunye ne-SiO2 zixhonywe, oko kukuthi, zisusiwe. Ngeli xesha, indlelaetchingiyasetyenziswa. Kuluhlu lwe-etching, kukho ukuhlelwa kwe-directional etching kunye ne-non-directional etching. Ukubhalwa komkhomba-ndlela kubhekiselele kwietchingkwicala elithile, ngelixa i-non-directional etching i-non-directional (ndathetha ngempazamo kakhulu. Ngamafutshane, kukususa i-SiO2 kwicala elithile ngokusebenzisa i-acids kunye neziseko ezithile). Kulo mzekelo, sisebenzisa i-etching ye-directional etching ezantsi ukususa i-SiO2, kwaye iba ngolu hlobo.
Ekugqibeleni, susa i-photoresist. Ngeli xesha, indlela yokususa i-photoresist ayikho i-activation ngokusebenzisa ukukhanya kwe-irradiation ekhankanywe ngasentla, kodwa ngezinye iindlela, kuba akudingeki ukuba sichaze ubungakanani obuthile ngeli xesha, kodwa ukususa yonke i-photoresist. Ekugqibeleni, kuba njengoko kubonisiwe kulo mfanekiso ulandelayo.
Ngale ndlela, sifezekise injongo yokugcina indawo ethile yePoly SiO2.
Ukwenziwa komthombo kunye nedreyini:
Ekugqibeleni, makhe siqwalasele indlela umthombo kunye ne-drain eyenziwe ngayo. Wonke umntu usakhumbula ukuba sithethe ngayo kwinkupho edlulileyo. Umthombo kunye ne-drain zifakwe i-ion kunye nohlobo olufanayo lwezinto. Ngeli xesha, sinokusebenzisa i-photoresist ukuvula indawo yomthombo / i-drain apho uhlobo lwe-N lufuna ukufakwa. Ekubeni sithatha kuphela i-NMOS njengomzekelo, zonke iindawo kulo mfanekiso ungasentla ziya kuvulwa, njengoko kubonisiwe kulo mfanekiso ulandelayo.
Ekubeni inxalenye egutyungelwe yi-photoresist ayikwazi ukufakelwa (ukukhanya kuvaliwe), izakhi zodidi lwe-N ziya kufakwa kuphela kwi-NMOS efunekayo. Ekubeni i-substrate ephantsi kwe-poly ivalwe yi-poly kunye ne-SiO2, ayiyi kufakwa, ngoko iba ngolu hlobo.
Ngeli xesha, imodeli ye-MOS elula yenziwe. Kwithiyori, ukuba i-voltage yongezwa kumthombo, i-drain, i-poly kunye ne-substrate, le MOS inokusebenza, kodwa asikwazi nje ukuthatha i-probe kwaye songeze i-voltage ngqo kumthombo kunye nokukhupha. Ngeli xesha, ii-wiring ze-MOS ziyafuneka, oko kukuthi, kule MOS, qhagamshela iingcingo ukudibanisa ii-MOS ezininzi kunye. Makhe sijonge inkqubo yocingo.
Ukwenza i-VIA:
Inyathelo lokuqala kukugubungela yonke i-MOS ngomaleko we-SiO2, njengoko kubonisiwe kulo mfanekiso ungezantsi:
Ngokuqinisekileyo, le SiO2 iveliswa yi-CVD, kuba ikhawuleza kakhulu kwaye igcina ixesha. Oku kulandelayo kuseyinkqubo yokubeka i-photoresist kunye nokuveza. Emva kokugqiba, kubonakala ngathi.
Emva koko sebenzisa indlela yokucima ukukhupha umngxuma kwi-SiO2, njengoko kuboniswe kwinxalenye engwevu kumfanekiso ongezantsi. Ubunzulu balo mngxuma bunxibelelana ngqo nomphezulu weSi.
Ekugqibeleni, susa i-photoresist kwaye ufumane imbonakalo elandelayo.
Ngeli xesha, into ekufuneka yenziwe kukugcwalisa umqhubi kulo mngxuma. Uyintoni na lo mqhubi? Inkampani nganye yahlukile, uninzi lwazo zii-alloys ze-tungsten, ngoko ungazaliswa njani lo mngxuma? I-PVD (i-Physical Vapor Deposition) indlela isetyenzisiweyo, kwaye umgaqo ufana nomfanekiso ongezantsi.
Sebenzisa i-electrons okanye i-ion enamandla kakhulu ukubhobhoza into ekujoliswe kuyo, kwaye into ejoliswe kuyo eyaphukileyo iya kuwela phantsi ngendlela yee-athomu, ngaloo ndlela yenza i-coating engezantsi. Izinto ekujoliswe kuzo esiqhele ukuzibona ezindabeni zibhekisa kwizinto ekujoliswe kuzo apha.
Emva kokuzalisa umngxuma, kubonakala ngathi.
Ewe, xa siyigcwalisa, akunakwenzeka ukulawula ubukhulu bokutya ukuze bulingane ncam nobunzulu bomngxuma, ngoko kuya kubakho ukugqithisa, ngoko sisebenzisa iteknoloji yeCMP (Chemical Mechanical Polishing), evakala kakhulu. isiphelo esiphezulu, kodwa eneneni iyasila, isila iinxalenye ezingaphezulu. Isiphumo sinje.
Kweli nqanaba, sigqibe ukuveliswa komaleko we-via. Kakade ke, imveliso ye via ikakhulu kuba wiring umaleko metal ngasemva.
Imveliso yomaleko wesinyithi:
Phantsi kwezi meko zingasentla, sisebenzisa i-PVD ukuthoba omnye umaleko wesinyithi. Le ntsimbi ininzi i-alloy esekwe ngobhedu.
Emva koko emva kokuvezwa kunye ne-etching, sifumana into esiyifunayo. Emva koko qhubeka ukupakisha de sihlangabezane neemfuno zethu.
Xa sizoba uyilo, siya kukuxelela ukuba zingaphi iileya zentsimbi kwaye ngokwenkqubo esetyenziswayo zinokupakishwa kakhulu, okuthetha ukuba zingaphi iileya ezinokupakishwa.
Ekugqibeleni, sifumana esi sakhiwo. I-pad ephezulu yipini yale chip, kwaye emva kokupakishwa, iba yipini esiyibonayo (ewe, ndiyidwebile ngokungacwangciswanga, akukho kubaluleka okusebenzayo, umzekelo nje).
Le yinkqubo jikelele yokwenza itshiphu. Kulo mbandela, sifunde malunga nokuvezwa okubaluleke kakhulu, i-etching, i-ion implantation, iityhubhu zesithando somlilo, i-CVD, i-PVD, i-CMP, njl njl kwi-semiconductor foundry.
Ixesha lokuposa: Aug-23-2024