I-BJT, i-CMOS, i-DMOS kunye nezinye iitekhnoloji zenkqubo ye-semiconductor

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Njengoko iinkqubo zokuvelisa i-semiconductor ziqhubeka nokwenza impumelelo, isitatimende esidumileyo esibizwa ngokuba yi "Moore's Law" sele sijikeleza kwishishini. Yacetywa nguGordon Moore, omnye wabasunguli be-Intel, ngo-1965. Umxholo wayo ophambili kukuba: inani lee-transistors ezinokuthi zihlaliswe kwisekethe edibeneyo iya kuphinda kabini malunga neenyanga ezili-18 ukuya kwii-24. Lo mthetho awukho nje ukuhlalutya kunye nokuqikelelwa kwendlela yokuphuhliswa kweshishini, kodwa kwakhona ukuqhubela phambili ukuphuhliswa kweenkqubo zokuvelisa i-semiconductor - yonke into kukwenza ii-transistors ezinobungakanani obuncinci kunye nokusebenza okuzinzile. Ukusukela ngeminyaka yee-1950 ukuza kuthi ga ngoku, malunga neminyaka engama-70, iyonke ye-BJT, i-MOSFET, i-CMOS, i-DMOS, kunye ne-hybrid BiCMOS kunye neteknoloji yenkqubo ye-BCD ziye zaphuhliswa.

 

1. BJT

I-bipolar junction transistor (BJT), eyaziwa ngokuba yi-triode. Ukuhamba kwentlawulo kwi-transistor ikakhulu ngenxa yokusasazwa kunye nokunyakaza kwe-drift yabathwali kwi-PN junction. Ekubeni ibandakanya ukuhamba kwee-electron kunye nemingxuma, ibizwa ngokuba yi-bipolar device.

Xa sijonga emva kwimbali yokuzalwa kwayo. Ngenxa yengcamango yokutshintsha i-vacuum triodes kunye ne-amplifiers eqinile, u-Shockley ucebise ukuba enze uphando olusisiseko kwii-semiconductors ehlotyeni lika-1945. Kwisiqingatha sesibini se-1945, i-Bell Labs yaseka iqela lophando lwe-fiziksi eqinile ekhokelwa nguShockley. Kweli qela, akukho physicists kuphela, kodwa kunye neenjineli zeesekethe kunye neekhemisti, kuquka uBardeen, i-physicist theory, kunye noBrattain, i-physicist yovavanyo. NgoDisemba ka-1947, isiganeko esasithathwa njengesiganeko esibalulekileyo kwizizukulwana ezilandelayo senzeka ngokuqaqambileyo-uBardeen kunye noBrattain baqulunqa ngempumelelo indawo yokuqala ye-germanium yoqhagamshelwano lwe-transistor kunye nokwandisa ngoku.

I-Bardeen kunye ne-Brattain yokuqala ye-point-contact transistor

Kungekudala emva koko, u-Shockley wavelisa i-bipolar junction transistor ngo-1948. Wacebisa ukuba i-transistor inokudityaniswa ngokudityaniswa kwe-pn ezimbini, enye ibheke phambili kwaye enye i-reverse biased, kwaye wafumana ipatent ngoJuni ka-1948. Ngo-1949, wapapasha ithiyori eneenkcukacha ezibanzi. wokusebenza kwe-transistor yokuhlangana. Ngaphezu kweminyaka emibini kamva, izazinzulu kunye neenjineli kwi-Bell Labs zaphuhlisa inkqubo yokuphumeza ukuveliswa kwee-transistors ezininzi (isiganeko esibalulekileyo kwi-1951), ukuvula ixesha elitsha lobuchwepheshe be-elektroniki. Ekuthatheni ingqalelo igalelo labo ekuyilweni kweetransistors, uShockley, uBardeen kunye noBrattain ngokudibeneyo baphumelele iBhaso leNobel kwiFiziksi ngo-1956.

Umzobo olula wesakhiwo se-NPN bipolar junction transistor

Ngokumalunga nesakhiwo se-bipolar junction transistors, ii-BJT eziqhelekileyo ziyi-NPN kunye ne-PNP. Ulwakhiwo lwangaphakathi oluneenkcukacha luboniswe kumzobo ongezantsi. Ummandla we-semiconductor yokungcola ehambelana ne-emitter ngummandla we-emitter, onomxholo ophezulu we-doping; ummandla we-semiconductor yokungcola ehambelana nesiseko ngummandla wesiseko, onobubanzi obuncinci kakhulu kunye noxinzelelo lwe-doping oluphantsi kakhulu; ummandla we-semiconductor yokungcola ehambelana nomqokeleli ngummandla wokuqokelela, onommandla omkhulu kunye noxinzelelo lwe-doping oluphantsi kakhulu.

Iinzuzo zetekhnoloji ye-BJT zisantya esiphezulu sokuphendula, i-transconductance ephezulu (iinguqu ze-input voltage zihambelana notshintsho olukhulu lwangoku), ingxolo ephantsi, ukuchaneka okuphezulu kwe-analog, kunye nokukwazi ukuqhuba ngoku ngamandla; izinto ezingeloncedo kukudityaniswa okuphantsi (ubunzulu obuthe nkqo abunakuncitshiswa ngobungakanani becala) kunye nokusetyenziswa kwamandla aphezulu.

 

2. MOS

I-Metal Oxide Semiconductor Field Effect Transistor (i-Metal Oxide Semiconductor FET), oko kukuthi, i-transistor yempembelelo yentsimi elawula ukutshintsha kwe-semiconductor (S) channel conductive ngokusebenzisa i-voltage kwisango lomaleko wesinyithi (M-metal aluminiyam) kunye umthombo ngokusebenzisa umaleko we-oxide (O-insulating layer SiO2) ukuvelisa umphumo wentsimi yombane. Ekubeni isango kunye nomthombo, kunye nesango kunye ne-drain zibekwe zodwa yi-SiO2 insulating layer, i-MOSFET ikwabizwa ngokuba yi-insulated field field effect transistor. Kwi-1962, i-Bell Labs ibhengeze ngokusemthethweni uphuhliso oluyimpumelelo, oluye lwaba yinto ebalulekileyo kwimbali yophuhliso lwe-semiconductor kwaye yabeka ngokuthe ngqo isiseko sobugcisa bokuvela kwememori ye-semiconductor.

I-MOSFET inokohlulwa ibe yitshaneli ye-P kunye nejelo le-N ngokohlobo lwesitishi sokuqhuba. Ngokwe-amplitude ye-voltage yesango, inokwahlulwa ibe: uhlobo lokunciphisa-xa i-voltage yesango i-zero, kukho umjelo oqhubayo phakathi kwe-drain kunye nomthombo; uphuculo lodidi lwezixhobo zetshaneli ze-N (P), kukho umjelo wokuqhuba kuphela xa amandla ombane wesango mkhulu kuno (ngaphantsi) kunoziro, kwaye amandla e-MOSFET luhlobo lokuphucula umjelo we-N.

Umahluko omkhulu phakathi kwe-MOS kunye ne-triode ibandakanya kodwa ayiphelelanga kwezi ngongoma zilandelayo:

-I-Triodes zixhobo ze-bipolar ngenxa yokuba ininzi kunye nabathwali abancinci bathatha inxaxheba ekuqhubeni ngexesha elifanayo; ngelixa i-MOS iqhuba kuphela umbane ngokusebenzisa uninzi lwabathwali kwii-semiconductors, kwaye ikwabizwa ngokuba yi-unipolar transistor.
-I-Triodes zizixhobo ezilawulwa ngoku kunye nokusetyenziswa kwamandla aphezulu; ngelixa ii-MOSFET zizixhobo ezilawulwa ngamandla ombane asebenzisa amandla aphantsi.
-Ii-Triodes zinokumelana okukhulu, ngelixa iityhubhu ze-MOS zine-resistance encinci, zingamakhulu ambalwa ezigidigidi. Kwizixhobo zombane zangoku, iityhubhu zeMOS zisetyenziswa ngokubanzi njengotshintsho, ikakhulu ngenxa yokuba ukusebenza kakuhle kweMOS kuphezulu xa kuthelekiswa neetriodes.
-Ii-triodes zineendleko ezifanelekileyo, kwaye iityhubhu zeMOS zibiza kakhulu.
-Namhlanje, iityhubhu zeMOS zisetyenziselwa ukubuyisela i-triodes kwiimeko ezininzi. Kuphela kwezinye iimeko eziphantsi kwamandla okanye amandla-amandla, siya kusebenzisa i-triodes ngokuqwalasela inzuzo yexabiso.

3. CMOS

I-Metal Oxide Semiconductor eyongezelelweyo: Itekhnoloji ye-CMOS isebenzisa i-p-type ehambelanayo kunye ne-n-type metal oxide semiconductor transistors (MOSFETs) ukwakha izixhobo zombane kunye neesekethe ezinengqondo. Lo mfanekiso ulandelayo ubonisa i-inverter ye-CMOS eqhelekileyo, esetyenziselwa ukuguqula "1→0" okanye "0→1".

Eli nani lilandelayo licandelo eliqhelekileyo leCMOS. Icala lasekhohlo yi-NMS, kwaye icala lasekunene yi-PMOS. Izibonda ze-G ze-MOS ezimbini zidibaniswe kunye njengegalelo lesango eliqhelekileyo, kwaye iipali ze-D zixhunywe kunye njengemveliso eqhelekileyo yokukhupha. I-VDD iqhagamshelwe kumthombo we-PMOS, kwaye i-VSS iqhagamshelwe kumthombo we-NMOS.

Ngowe-1963, uWanlass kunye noSah weFairchild Semiconductor baqulunqa isekethe yeCMOS. Ngo-1968, i-American Radio Corporation (RCA) yavelisa imveliso yokuqala yesekethe edibeneyo yeCMOS, kwaye ukususela ngoko, isekethe yeCMOS iphumelele uphuhliso olukhulu. Iinzuzo zayo kukusetyenziswa kwamandla aphantsi kunye nokudibanisa okuphezulu (inkqubo ye-STI / LOCOS inokuphucula ngakumbi ukudibanisa); ukusilela kwayo kubukho besiphumo sokutshixa (i-PN junction reverse bias isetyenziswa njengokuzihlukanisa phakathi kweetyhubhu ze-MOS, kwaye ukuphazamiseka kunokwenza lula i-loop eyomeleziweyo kwaye itshise isekethe).

 

4. DMOS

ISemiconductor yeMetal Oxide eDiffused Double-Diffused Metal: Ngokufana nolwakhiwo lwezixhobo eziqhelekileyo zeMOSFET, inomthombo, idrain, isango kunye nezinye ii-electrode, kodwa amandla ombane wokuqhekeka kwesiphelo sombhobho uphezulu. Inkqubo yokusasazwa kabini isetyenziswa.

Lo mzobo ungezantsi ubonisa i-cross-section ye-DMOS yesijelo esiqhelekileyo se-N. Olu hlobo lwesixhobo se-DMOS ludla ngokusetyenziswa kwizicelo ezisezantsi zokutshintsha, apho umthombo we-MOSFET uqhagamshelwe phantsi. Ukongeza, kukho i-P-channel DMOS. Olu hlobo lwesixhobo se-DMOS ludla ngokusetyenziswa kwizicelo zokutshintsha kwecala eliphezulu, apho umthombo we-MOSFET uqhagamshelwe kumbane ovumayo. Ngokufanayo ne-CMOS, izixhobo ezincedisayo ze-DMOS zisebenzisa i-N-channel kunye ne-P-channel MOSFETs kwi-chip efanayo ukubonelela ngemisebenzi yokutshintsha okuhambelanayo.

Kuxhomekeka kwicala lejelo, i-DMOS inokohlulwa ibe ziindidi ezimbini, ezizezi, nkqo intsimbi ephindwe kabini ye-oxide semiconductor ifuthe lentsimi i-transistor VDMOS (i-Vertical Double-Diffused MOSFET) kunye necala eliphindwe kabini lesinyithi se-oxide semiconductor field effect transistor LDMOS (Lateral Double-Diffused MOSFET) -Diffused MOSFET).

Izixhobo ze-VDMOS ziyilwe ngomjelo othe nkqo. Xa kuthelekiswa nezixhobo ze-DMOS ezisecaleni, zinevolthi ephezulu yokuqhekeka kunye nobuchule bokuphatha obukhoyo, kodwa ukumelana nokumelana kusekukhulu.

Izixhobo ze-LDMOS ziyilwe ngetshaneli esecaleni kwaye zizixhobo zamandla asymmetric zeMOSFET. Xa kuthelekiswa nezixhobo ezithe nkqo zeDMOS, zivumela ukuxhathisa okuphantsi kunye nesantya sokutshintsha ngokukhawuleza.

Xa kuthelekiswa nee-MOSFETs zemveli, i-DMOS inomthamo ophezulu wokusebenza kunye nokuxhathisa okuphantsi, ngoko ke isetyenziswa ngokubanzi kwizixhobo zombane zamandla aphezulu ezifana nokutshintsha kwamandla, izixhobo zombane kunye nokuqhuba isithuthi sombane.

 

5. I-BiCMOS

I-Bipolar CMOS iteknoloji edibanisa i-CMOS kunye nezixhobo ze-bipolar kwi-chip efanayo ngexesha elinye. Ingcamango yayo esisiseko kukusebenzisa izixhobo ze-CMOS njengesekethe yeyunithi eyintloko, kwaye yongeza izixhobo ze-bipolar okanye iisekethe apho imithwalo emikhulu ye-capacitive ifuneka ukuba iqhutywe. Ke ngoko, iisekethe ze-BiCMOS zinezibonelelo zokudityaniswa okuphezulu kunye nokusetyenziswa kwamandla aphantsi kweesekethe ze-CMOS, kunye neengenelo zesantya esiphezulu kunye namandla okuqhuba angoku kwiisekethe ze-BJT.

Itekhnoloji ye-STMicroelectronics' ye-BiCMOS SiGe (i-silicon germanium) idibanisa i-RF, i-analog kunye ne-digital parts kwi-chip enye, enokunciphisa kakhulu inani lamacandelo angaphandle kunye nokwandisa ukusetyenziswa kwamandla.

 

6. I-BCD

I-Bipolar-CMOS-DMOS, le teknoloji inokwenza izixhobo ze-bipolar, i-CMOS kunye ne-DMOS kwi-chip efanayo, ebizwa ngokuba yinkqubo ye-BCD, eyaqala ukuphuhliswa ngempumelelo yi-STMicroelectronics (ST) kwi-1986.

I-Bipolar ifanelekile kwiisekethe ze-analog, i-CMOS ifanelekile kwiisekethe zedijithali kunye neengqiqo, kwaye i-DMOS ifanelekile kumandla kunye nezixhobo eziphezulu ze-voltage. I-BCD idibanisa izibonelelo zezintathu. Emva kokuphuculwa okuqhubekayo, i-BCD isetyenziswa ngokubanzi kwiimveliso kwiinkalo zolawulo lwamandla, ukufunyanwa kwedatha ye-analog kunye ne-actuator yamandla. Ngokwewebhusayithi esemthethweni ye-ST, inkqubo evuthiweyo ye-BCD ikwi-100nm, i-90nm isekuyilo lweprototype, kwaye itekhnoloji ye-40nmBCD yeyemveliso yesizukulwana esilandelayo esiphantsi kophuhliso.