I-Silicon carbide (i-SiC) yinto entsha ye-semiconductor material. I-Silicon carbide ine-gap enkulu yebhendi (malunga namaxesha e-3 e-silicon), amandla aphezulu abalulekileyo entsimi (malunga namaxesha angama-10 e-silicon), i-conductivity ephezulu ye-thermal (malunga ne-3 amaxesha e-silicon). Yinto ebalulekileyo kwisizukulwana esilandelayo semiconductor imathiriyeli. Iingubo ze-SiC zisetyenziswa ngokubanzi kwishishini le-semiconductor kunye ne-photovoltaics yelanga. Ngokukodwa, i-susceptors esetyenziswe ekukhuleni kwe-epitaxial ye-LEDs kunye ne-Si single crystal epitaxy ifuna ukusetyenziswa kwe-SiC coating. Ngenxa yokuqina okunyukayo kwee-LED kumashishini okukhanyisa kunye nokubonisa, kunye nophuhliso olomeleleyo lweshishini le-semiconductor,Imveliso yokwambathisa yeSiCamathemba mahle kakhulu.
UMHLABA WESICELO
Ubunyulu, Ubume be-SEM, uhlalutyo lokutyeba kweUkwaleka kweSiC
Ukucoceka kweengubo ze-SiC kwi-graphite ngokusebenzisa i-CVD kuphezulu njenge-99.9995%. Ubume bayo yi-fcc. Iifilimu ze-SiC ezifakwe kwi-graphite (111) zijoliswe njengoko kuboniswe kwidatha ye-XRD (Umfanekiso.1) ebonisa umgangatho wayo ophezulu we-crystalline. Ubunzima befilimu ye-SiC bufana kakhulu njengoko kuboniswe kumfanekiso we-2.
Umzobo 2: ubukhulu beyunifomu yeefilimu ze-SiC SEM kunye ne-XRD yefilimu ye-beta-SiC kwigraphite
Idatha ye-SEM ye-CVD SiC ifilimu encinci, ubukhulu bekristale yi-2 ~ 1 Opm
Isakhiwo se-crystal yefilimu ye-CVD SiC yisakhiwo se-cubic esijongene nobuso, kwaye i-orientation yokukhula kwefilimu isondele kwi-100%
I-silicon carbide (i-SiC) ifakweIsiseko sesona siseko se-silicon eyodwa ye-crystal kunye ne-GaN epitaxy, eyona nxalenye ephambili ye-epitaxy furnace. Isiseko yinto ephambili yokuvelisa i-silicon ye-monocrystalline kwiisekethe ezinkulu ezidibeneyo. Inobunyulu obuphezulu, ukumelana nobushushu obuphezulu, ukuxhathisa ukubola, ukuxinana komoya okulungileyo kunye nezinye iimpawu ezibalaseleyo zemathiriyeli.
Ukusetyenziswa kwemveliso kunye nokusetyenziswa
Isiseko se-graphite yokwaleka kwikristale enye yesilicon epitaxial ukukhulaIfanele oomatshini be-Aixtron, njl Ubunzima bokugquma: 90~150umUbubanzi be-wafer crater yi-55mm.
Ixesha lokuposa: Mar-14-2022