Custom High Purity SiC Coated yeGraphite heater Heating Element

Custom High Purity SiC Coated yeGraphite iHeat yokufudumeza Element Featured Image

Inkcazelo emfutshane:

Isifudumezi segraphite luhlobo lwemathiriyeli yokufudumeza yombane eyenza ubushushu ngokufudumeza imathiriyeli yegraphite ngombane, edla ngokwenziwa ngegraphite kunye neeseramikhi. Isakhiwo sayo se-wavy sinokutshabalalisa ngokufanelekileyo ukushisa kwaye sisetyenziswa ngokubanzi kwishishini, ukwakhiwa, ezolimo kunye nobomi bemihla ngemihla. Ngenxa yokuqhuba kakuhle kwe-thermal kunye nokuzinza okuphezulu kweqondo lokushisa, i-graphite yokufudumeza into isetyenziswa kakhulu kumashishini.

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Iimpawu eziphambili zesifudumezi segraphite:

1. ukufana kwesakhiwo sokufudumala.

2. Ukuqhuba kakuhle kombane kunye nomthwalo ophezulu wombane.

3. ukumelana nomhlwa.

4. i-inoxidizability.

5. ukucoceka kweekhemikhali eziphezulu.

6. amandla aphezulu oomatshini.

Inzuzo inamandla okusebenza, ixabiso eliphezulu kunye nokugcinwa okuphantsi. Sinokuvelisa i-anti-oxidation kunye nobomi obude be-graphite crucible, i-graphite mold kunye nazo zonke iindawo zesifudumezi segraphite.

Iiparamitha eziphambili zesifudumezi segraphite

Inkcazo yobuGcisa	I-Semicera-M3
Ubuninzi Bobuninzi (g/cm3)	≥1.85
Umxholo wothuthu (PPM)	≤500
Ukuqina konxweme	≥45
Ukuchasa okuKhethekileyo (μ.Ω.m)	≤12
Amandla e-Flexural (Mpa)	≥40
Amandla acinezelayo (Mpa)	≥70
Max. Ubungakanani bozinkozo (μm)	≤43
I-Coefficient yoKwandiswa kweThermal Mm/°C	≤4.4 * 10-6

Amandla eVET yi iumenzi wokwenyani weemveliso ezenziwe ngokwezifiso zegraphite kunye nesilicon carbide ene-CVD coating,inokubonelelaezahlukeneyoiindawo ezilungiselelwe i-semiconductor kunye ne-photovoltaic industry. OIqela le-ur lobuchwephesha livela kumaziko aphezulu ophando lwasekhaya, linokubonelela ngezisombululo zemathiriyeli yobuchwepheshayeyakho.

Siqhubeka siphuhlisa iinkqubo eziphambili ukubonelela ngemathiriyeli ephezulu kakhulu,kwayebaye benza iteknoloji ekhethekileyo yelungelo elilodwa lomenzi wechiza, enokwenza iqhina phakathi kwengubo kunye ne-substrate ibe ngqongqo kwaye ingabikho lula kwi-detachment.

Fukutya kweemveliso zethu:

1. Ukumelana nobushushu obuphezulu be-oxidation ukuya kuthi ga kwi-1700℃.
2. Ukucoceka okuphezulu kunyeukufana kwe-thermal
3. Ukumelana nokugqwesa okugqwesileyo: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.
4. Ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
5. Ubomi benkonzo ende kwaye buhlala ixesha elide

CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko ze-CVD SiCukutyabeka
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
晶体结构 / Ulwakhiwo lweCrystal	FCC isigaba β多晶，主要為（111）取向
密度 / Ubuninzi	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Ukhozo SiZe	2 ~ 10μm
纯度 / Ukucoceka kwemichiza	99.99995%
热容 / Umthamo wobushushu	640 J·kg^-1·K^-1
升华温度 / Iqondo lobushushu elisezantsi	2700℃
抗弯强度 / Amandla e-Flexural	415 MPa RT 4-inqaku
杨氏模量 / Imodyuli yabaselula	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalUkuqhuba	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa kweThermal(CTE)	4.5×10^-6K^-1