Ukufumana ukuzaliseka komthengi yinjongo yenkampani yethu ngaphandle kwesiphelo. Siza kwenza amalinge amabi okufumana izisombululo ezitsha nezikumgangatho ophezulu, sidibane neenkcukacha zakho ezikhethekileyo kwaye sikubonelele ngokuthengiswa kwangaphambili, ukuthengiswa kunye nababoneleli emva kokuthengiswa kweeMveliso eziNtsha eziTshayo zePlasma Eyongeziweyo ye-CVD Tube Furnace yokuFakwa kwe-High- Iifilimu eziLuqilima ezisemgangathweni, Wamkelekile kumbuzo wakho, eyona nkonzo ibalaseleyo iya kubonelelwa ngentliziyo epheleleyo.
Ukufumana ukuzaliseka komthengi yinjongo yenkampani yethu ngaphandle kwesiphelo. Siza kwenza amalinge amabi okufumana izisombululo ezitsha nezikumgangatho ophezulu, sidibane neenkcukacha zakho ezizodwa kwaye sikubonelele ngokuthengisa kwangaphambili, ukuthengisa kunye nababoneleli emva kokuthengisa.I-China CVD Tube Furnace kunye ne-CVD Tube Furnace ye-Chemical Vapor Deposition, Kwimarike ekhuphisanayo ngokwandayo, Ngenkonzo enyanisekileyo yomgangatho ophezulu wempahla kunye nodumo olufanelekileyo, sihlala sinika abathengi inkxaso kwizinto kunye nobuchule bokufikelela kwintsebenziswano yexesha elide. Ukuphila ngokomgangatho, uphuhliso ngetyala lusukelo lwethu lwanaphakade, Sikholelwa ngokuqinileyo ukuba emva kotyelelo lwakho siya kuba ngamaqabane exesha elide.
Iimbumba zekhabhoni / ikhabhoni(emva koku kubhekiselwa kuyo ngokuthi “C / C okanye CFC”) luhlobo lwezinto ezidibeneyo ezisekelwe kwikhabhoni kwaye zomelezwe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform). Inayo zombini inertia yekhabhoni kunye namandla aphezulu e-carbon fiber. Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukuxhathisa ukugqwala, ukudambisa i-friction kunye ne-thermal kunye neempawu zombane.
CVD-SiCI-coating ineempawu zesakhiwo esifanayo, i-compact material, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.
Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.
Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.
Iimpawu eziphambili:
1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.
IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:
| SiC-CVD | ||
| Ukuxinana | (g/cc)
| 3.21 |
| Amandla e-Flexural | (Mpa)
| 470 |
| Ukwandiswa kweThermal | (10-6/K) | 4
|
| I-Thermal conductivity | (W/mK) | 300
|
