Abathengisi abaLungileyo kwiWholesale yaseTshayina yokuGcwalisa iAbrasive kunye neSandblasting Silicon Carbide Nano Sic eneGood Thermal Conductivity

Abathengisi abaLungileyo kwiWholesale yaseTshayina yokuMenyezeliswa kweAbrasive kunye neSandblasting Silicon Carbide Nano Sic enoMfanekiso oLungileyo weThermal Conductivity

Inkcazelo emfutshane:

Indawo yemvelaphi:eTshayina

Ulwakhiwo lweCrystal :isigaba seFCCβ

Ubuninzi :3.21 g/cm;

Ukuqina:2500 Vickers;

Ubungakanani benkozo:2~10μm;

Ukucoceka kwemichiza:99.99995%;

Umthamo wobushushu :640J·kg-1·K-1;

Iqondo lobushushu eliphantsi:2700℃;

Amandla eFelexural :415 Mpa (RT 4-Point);

Imodyuli eNtsha:430 GPA (4pt bend, 1300℃);

Ukwandiswa kweThermal (CTE) :4.5 10-6K-1;

I-Thermal Conductivity:300(W/MK);

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ngolawulo lwethu olukhulu, amandla obuchule obunamandla kunye nenkqubo engqongqo yokuphatha, siyaqhubeka nokubonelela abathengi bethu ngomgangatho ohloniphekileyo ophezulu, amaxabiso okuthengisa afanelekileyo kunye nababoneleli abakhulu. Sinenjongo yokuba phakathi kwamaqabane akho athenjiweyo kwaye sifumane ukwaneliseka kwakho kubathengisi abaLungileyo baseChina iAbrasive polishing kunye neSandblasting Silicon Carbide NanoSickunye neGood Thermal Conductivity, Eyona njongo yethu iphambili kukuhlala kuluhlu njengophawu oluphezulu kunye nokukhokela njengovulindlela kwintsimi yethu. Siqinisekile ukuba amava ethu anemveliso ekudalweni kwezixhobo aya kufumana ukuthenjwa ngumthengi, Ndinqwenela ukusebenzisana kunye nokwenza ngokubambisana ixesha elide elingcono nawe!
Ngolawulo lwethu olukhulu, amandla obuchule obunamandla kunye nenkqubo engqongqo yokuphatha, siyaqhubeka nokubonelela abathengi bethu ngomgangatho ohloniphekileyo ophezulu, amaxabiso okuthengisa afanelekileyo kunye nababoneleli abakhulu. Sinenjongo yokuba phakathi kwamaqabane akho athembekileyo kwaye sifumane ukwaneliseka kwakhoChina Silicon Carbide, Sic, Injongo yethu "kukubonelela ngeemveliso zenyathelo lokuqala kunye nezisombululo kunye nenkonzo ebalaseleyo kubathengi bethu, kungoko siqinisekile ukuba kuya kufuneka ube nenzuzo yomda ngokusebenzisana nathi". Ukuba unomdla kulo naluphi na urhwebo lwethu okanye ungathanda ukuxoxa ngeodolo yesiko, nceda uzive ukhululekile ukuqhagamshelana nathi. Sijonge phambili ekwenzeni ubudlelwane beshishini obuyimpumelelo kunye nabathengi abatsha kwihlabathi liphela kungekudala.
Ingcaciso yeMveliso

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	FCC isigaba β
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Ubushushu bokunciphisa	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300