I-Monocrystalline 8 Intshi yeSilicon Wafer evela kwi-VET Energy sisisombululo esikhokelayo kwishishini le-semiconductor kunye ne-electronic device fabrication. Ukubonelela ngococeko oluphezulu kunye nesakhiwo se-crystalline, ezi ziqwenga zifanelekile kwizicelo eziphezulu zokusebenza kuzo zombini i-photovoltaic kunye ne-semiconductor industries. I-VET Energy iqinisekisa ukuba iwafer nganye icutshungulwa ngobunono ukuze ihlangabezane neyona migangatho iphezulu, ibonelela ngokufana okugqwesileyo kunye nokugqitywa komphezulu ogudileyo, okuyimfuneko kwimveliso yesixhobo sombane esikwizinga eliphezulu.
Ezi Monocrystalline 8 Inch Silicon Wafers zihambelana noluhlu lwezixhobo, kuquka i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, kwaye ifaneleke ngokukodwa ukukhula kwe-Epi Wafer. I-conductivity ephezulu ye-thermal kunye neempawu zombane zibenza ukuba bakhethe okuthembekileyo kwimveliso ephezulu. Ukongeza, ezi wafers ziyilelwe ukusebenza ngaphandle komthungo ngemathiriyeli efana neGallium Oxide Ga2O3 kunye neAlN Wafer, enikezela ngoluhlu olubanzi lwezicelo ukusuka kumbane wamandla ukuya kwizixhobo zeRF. I-wafers nayo ihambelana ngokugqibeleleyo kwiinkqubo zeCassette kwi-volume ephezulu, i-automated environments zokuvelisa.
Umgca wemveliso we-VET Energy awuphelelanga kwii-silicon wafers. Sikwabonelela ngoluhlu olubanzi lwezixhobo ze-semiconductor substrate, kubandakanya i-SiC Substrate, i-SOI Wafer, iSiN Substrate, i-Epi Wafer, njl. Ezi mveliso zinokuhlangabezana neemfuno zesicelo zabathengi abahlukeneyo kumandla ombane, amaza omoya, abenzi boluvo kunye namanye amacandelo.
I-VET Energy ibonelela abathengi ngezisombululo ze-wafer ezilungiselelweyo. Siyakwazi ukwenza ngokwezifiso ii-wafers kunye ne-resistivity eyahlukeneyo, umxholo we-oxygen, ubukhulu, njl. ngokweemfuno ezithile zabathengi. Ukongeza, sikwabonelela ngenkxaso yobuchwephesha kunye nenkonzo emva kokuthengisa ukunceda abathengi basombulule iingxaki ezahlukeneyo abadibana nazo ngexesha lenkqubo yemveliso.
IINGCACISO ZOKWENZAKALELAYO
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
I-Bow(GF3YFCD)-Ixabiso elipheleleyo | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
Umda weWafer | Beveling |
UBUPHAKAMBE GQIBELA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
Umphezulu Gqiba | Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP | ||||
Ubunzima boMphezulu | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
IiChips zoMda | Akukho okuvumelekileyo (ubude nobubanzi≥0.5mm) | ||||
Iindenti | Akukho Ivumelekileyo | ||||
Imikrwelo(Si-Face) | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | ||
Iintanda | Akukho Ivumelekileyo | ||||
Ukungabandakanywa kuMda | 3mm |