SiC Coated Graphite Carrier / Susceptor

Tlhaloso e Khutšoanyane:

VET Energy SiC Coated Graphite Carrier/Susceptor ke sehlahisoa se sebetsang hantle haholo se etselitsoeng ho fana ka ts'ebetso e tsitsitseng le e tšepahalang ka nako e telele. E na le ho hanyetsa mocheso o motle haholo le ho tšoana ha mocheso, bohloeki bo phahameng, ho hanyetsa khoholeho ea mobu, e leng se etsang hore e be tharollo e phethahetseng bakeng sa lisebelisoa tsa ho lokisa li-wafer.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

SiC coated suscetpor ke karolo ea bohlokoa e sebelisoang lits'ebetsong tse fapaneng tsa tlhahiso ea semiconductor. Re sebelisa theknoloji ea rona e nang le tokelo ea molao ho etsa hore SiC e koahetsoeng ka suscetpor e be le bohloeki bo phahameng ka ho fetisisa, bohloeki bo botle ba ho roala le bophelo bo botle ba tšebeletso, hammoho le ho hanyetsa lik'hemik'hale tse phahameng le thepa ea botsitso ba mocheso.

Likarolo tsa lihlahisoa tsa rona:

1. Ho hanyetsa mocheso o phahameng oa oxidation ho fihlela ho 1700 ℃.
2. Bohloeki bo phahameng le ho tšoana ha mocheso
3. Ho hanyetsa kutu e ntle haholo: acid, alkali, letsoai le li-reagents tsa manyolo.
4. Boima bo phahameng, bokaholimo bo kopanetsoeng, likaroloana tse ntle.
5. Bophelo bo bolelele ba tšebeletso le bo tšoarellang haholoanyane

CVD SiC薄膜基本物理性能 Lintho tsa motheo tsa 'mele tsa CVD SiCho roala
性质 / Thepa	典型数值 / Boleng bo Tlwaelehileng
晶体结构 / Sebopeho sa Crystal	FCC mohato oa β多晶，主要為（111）取向
密度 / Ho teteana	3.21 g/cm³
硬度 / Ho thatafala	2500 维氏硬度 (500g mojaro)
晶粒大小 / Mabele SiZe	2 ~ 10μm
纯度 / Bohloeki ba lik'hemik'hale	99.99995%
热容 / Bokhoni ba mocheso	640 J·kg^-1·K^-1
升华温度 / Sublimation Mocheso	2700 ℃
抗弯强度 / Flexural Matla	415 MPa RT 4-ntlha
杨氏模量 / Young's Modulus	430 Gpa 4pt kobeha, 1300 ℃
导热系数 / ThermalBoikhantšo	300Wm^-1·K^-1
热膨胀系数 / Katoloso ea Mocheso(CTE)	4.5×10^-6K^-1