SiC Coated Graphite Carriers, sic coating, SiC e koahetsoeng ka karoloana ea Graphite bakeng sa Semiconductor

Silicon carbide e koahetsoegraphite disk ke ho lokisa silicon carbide lera sireletsang holim'a graphite ka 'mele kapa lik'hemik'hale mouoane deposition le ho fafatsa. Sekoaelo se sirelelitsoeng sa silicon carbide se ka tlamahanngoa ka thata ho matrix a graphite, se etsa hore bokaholimo ba graphite bo be botenya ebile bo se na voids, bo fana ka thepa e ikhethang ea matrix ea graphite, ho kenyelletsa ho hanyetsa oxidation, ho hanyetsa asiti le alkali, ho hanyetsa khoholeho, ho hanyetsa kutu, joalo-joalo Hona joale, ho roala ha Gan ke e 'ngoe ea likarolo tse molemo ka ho fetisisa tsa motheo bakeng sa kholo ea epitaxial ea silicon carbide.

Silicon carbide semiconductor ke sesebelisoa sa mantlha sa semiconductor e ncha e nchafalitsoeng ea li-band gap. Lisebelisoa tsa eona li na le litšobotsi tsa ho hanyetsa mocheso o phahameng, ho hanyetsa mocheso o phahameng, maqhubu a phahameng, matla a phahameng le ho hanyetsa mahlaseli. E na le melemo ea ho potlakela ho fetola lebelo le ts'ebetso e phahameng. E ka fokotsa haholo tšebeliso ea matla a sehlahisoa, ea ntlafatsa matla a ho fetola matla le ho fokotsa bongata ba sehlahisoa. E sebelisoa haholo-holo puisanong ea 5g, ts'ireletso ea naha le indasteri ea sesole Sebaka sa RF se emetsoeng ke sefofane le sebaka sa lisebelisoa tsa elektroniki tse emeloa ke likoloi tse ncha tsa motlakase le "lisebelisoa tse ncha" li na le menyetla e hlakileng ea 'maraka e hlakileng le e kholo mafapheng a sechaba le a sesole.

Silicon carbide substrate ke thepa ea mantlha ea semiconductor e ncha e nchafalitsoeng ea li-band gap. Silicon carbide substrate e sebelisoa haholo ho lisebelisoa tsa elektroniki tsa microwave, lisebelisoa tsa motlakase tsa motlakase le masimong a mang. E pheletsong e ka pele ea ketane ea indasteri e pharaletseng ea lekhalo la semiconductor 'me ke sesebelisoa sa mantlha sa mantlha.Silicon carbide substrate e ka aroloa ka mefuta e' meli: semi insulating le conductive. Har'a tsona, semi insulating silicon carbide substrate e na le resistivity e phahameng (resistivity ≥ 105 Ω· cm). Semi insulating substrate e kopantsoeng le heterogeneous gallium nitride epitaxial sheet e ka sebelisoa e le lisebelisoa tsa lisebelisoa tsa RF, tse sebelisoang haholo puisanong ea 5g, ts'ireletso ea naha le indasteri ea sesole litšoantšong tse ka holimo; E 'ngoe ke conductive silicon carbide substrate e nang le resistivity e tlaase (moeli oa resistivity ke 15 ~ 30m Ω· cm). The homogeneous epitaxy ea conductive silicon carbide substrate le silicon carbide e ka sebelisoa e le lisebelisoa tsa lisebelisoa tsa matla. Maemo a mantlha a kopo ke likoloi tsa motlakase, litsamaiso tsa matla le masimo a mang