Theko e tlase ka ho Fetisisa bakeng sa Sefuthumatsi sa Graphite sa boleng bo Holimo se Customized bakeng sa Polycrystalline Silicon Ingot Furnace

Tlhaloso e Khutšoanyane:

Bohloeki <5ppm
‣ Tšebeliso e ntle ea doping
‣ Boima bo phahameng le ho khomarela
‣ Anti-corrosive e ntle le khanyetso ea khabone

‣ Boikemisetso ba litsebi
‣ Nako e khutšoanyane ea ho tsamaisa
‣ Phepelo e tsitsitseng
‣ Taolo ea boleng le ntlafatso e tsoelang pele

Epitaxy of GaN on Sapphire(RGB / Mini / Micro LED);Epitaxy ea GaN ho Si Substrate(UVC);Epitaxy ea GaN ho Si Substrate(Sesebediswa sa Elektronike);Epitaxy ea Si ho Si Substrate(Potoloho e kopantsoeng);Epitaxy ea SiC ho SiC Substrate(Substrate);Epitaxy ea InP ho InP


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Re ntse re tsoela pele ho eketsa le ho ntlafatsa litharollo le litšebeletso tsa rona. Ka nako e ts'oanang, re sebetsa ka mafolofolo ho etsa lipatlisiso le ntlafatso bakeng sa Theko e tlaase ka ho Fetisisa bakeng sa China High Quality Customized Graphite Heater bakeng sa Polycrystalline Silicon Ingot Furnace, Khoebo ea rona e ile ea hōla ka potlako ka boholo le botumo ka lebaka la boinehelo ba eona bo feletseng ho tlhahiso ea boleng bo phahameng, theko e kholo ea lihlahisoa le fantastis moreki mofani.
Re ntse re tsoela pele ho eketsa le ho ntlafatsa litharollo le litšebeletso tsa rona. Ka nako e ts'oanang, re sebetsa ka mafolofolo ho etsa lipatlisiso le ntlafatso bakeng saChina Graphite Heating Sebōpi, Sebaka sa Thermal sa Graphite, Feela bakeng sa ho finyella sehlahisoa sa boleng bo botle ho finyella tlhokahalo ea bareki, lihlahisoa tsohle tsa rona le tharollo li 'nile tsa hlahlojoa ka thata pele li romelloa. Re lula re nahana ka potso ka lehlakoreng la bareki, hobane u hlōla, re hlōla!

2022 boleng bo phahameng ba MOCVD Susceptor Reka inthaneteng China

 

Tekano e Hlahang: 1.85 g/cm3
Ho hanyetsa Motlakase: 11 μΩm
Flexural Strenth: 49 MPa (500kgf/cm2)
Bothata ba Lebōpo: 58
Molora: <5ppm
Thermal Conductivity: 116 W/mK (100 kcal/mhr-℃)

Sephaphatha ke selae sa silicon se botenya ba 1 millimeter se nang le bokaholimo bo bataletseng haholo ka lebaka la lits'ebetso tse hlokang tekheniki haholo. Tšebeliso e latelang e etsa qeto ea hore na ke mokhoa ofe oa ho holisa kristale o lokelang ho sebelisoa. Ka mohlala, ts'ebetsong ea Czochralski, silicon ea polycrystalline e qhibiliha 'me kristale e tšesaane ea pentšele e kenngoa ka silicon e qhibilihisitsoeng. Joale kristale ea peō e pota-potiloe ebe e huloa butle-butle holimo. Ho hlahisa colossus e boima haholo, monocrystal. Hoa khoneha ho khetha litšobotsi tsa motlakase tsa monocrystal ka ho eketsa lihlopha tse nyenyane tsa li-dopants tse phahameng. Likristale li entsoe ho latela litlhaloso tsa bareki ebe lia belisoa ebe li khaola likotoana. Kamora mehato e fapaneng e fapaneng ea tlhahiso, moreki o fumana li-wafers tse boletsoeng ka har'a sephutheloana se ikhethileng, se lumellang moreki ho sebelisa sephaphatha hang-hang moleng oa sona oa tlhahiso.

2

Sephaphatha se hloka ho feta mehatong e mengata pele se se se loketse ho sebelisoa lisebelisoa tsa elektroniki. Mokhoa o mong oa bohlokoa ke silicon epitaxy, eo ho eona liphaphatha li tsamaisoang ka li-susceptors tsa graphite. Thepa le boleng ba li-susceptors li na le phello ea bohlokoa ho boleng ba epitaxial layer ea wafer.

Bakeng sa likhato tse tšesaane tsa ho beha lifilimi tse kang epitaxy kapa MOCVD, VET e fana ka lisebelisoa tsa graphite tsa ultra-pure tse sebelisetsoang ho tšehetsa li-substrates kapa "wafers". Motheong oa ts'ebetso, lisebelisoa tsena, li-epitaxy susceptors kapa li-platform tsa sathelaete tsa MOCVD, li qala ho beoa tikolohong ea deposition:

Mocheso o phahameng.
Vacuum e phahameng.
Tšebeliso ea li-precursors tse matla tsa khase.
Tšilafalo ea Zero, ho ba sieo ha peeling.
Ho hanyetsa li-acid tse matla nakong ea ts'ebetso ea ho hloekisa


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