Silicon Carbide Coated Graphite Susceptor bakeng sa LED Etching

Tlhaloso e Khutšoanyane:

Silicon carbide susceptor bakeng sa etching LED (SiC tray) ke sesebelisoa se ikhethileng bakeng sa etching e tebileng ea silicon (mochini oa ICP etching). sepalangoang, se tsejoang hape e le sejari sa liphaephe, sejari sa silicon, se tsejoang hape e le pocket wafer. E sebelisoa haholo ho semiconductor CVD le vacuum sputtering.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Silicon carbide coated susceptor kea senotlolokarolo e sebelisoang lits'ebetsong tse fapaneng tsa tlhahiso ea semiconductor.Re sebelisa theknoloji ea rona e nang le tokelo ea molao ho etsa silicon carbide coated susceptor kabohloeki bo phahameng haholo,molemoho roalaho tšoanale bophelo bo botle ba tšebeletso, moho leho hanyetsa lik'hemik'hale tse phahameng le thepa ea botsitso ba mocheso.

VET Energy ke themoetsi oa 'nete oa lihlahisoa tse ikhethileng tsa graphite le silicon carbide tse nang le CVD coating,e ka fana katse fapa-fapanenglikarolo tse ikhethileng bakeng sa indasteri ea semiconductor le photovoltaic. OSehlopha sa ur sa tekheniki se tsoa litsing tse phahameng tsa lipatlisiso tsa lapeng, se ka fana ka litharollo tsa lisebelisoa tse ngata tsa litsebimolemong oa hau.

Re tsoela pele ho nts'etsapele lits'ebetso tse tsoetseng pele ho fana ka lisebelisoa tse tsoetseng pele,leba sebelitse theknoloji e ikhethileng e nang le tokelo ea molao, e ka etsang hore maqhama pakeng tsa ho roala le substrate e be thata le ho se khone ho arohana.

Flijo tsa lihlahisoa tsa rona:

1. Ho hanyetsa mocheso o phahameng oa oxidation ho fihlela ho 1700℃.
2. Bohloeki bo phahameng leho lumellana ha mocheso
3. Ho hanyetsa kutu e ntle haholo: acid, alkali, letsoai le li-reagents tsa manyolo.
4. Boima bo phahameng, bokaholimo bo kopanetsoeng, likaroloana tse ntle.
5. Bophelo bo bolelele ba tšebeletso le bo tšoarellang haholoanyane

CVD SiC薄膜基本物理性能 Lintho tsa motheo tsa 'mele tsa CVD SiCho roala
性质 / Thepa	典型数值 / Boleng bo Tlwaelehileng
晶体结构 / Sebopeho sa Crystal	FCC mohato oa β多晶，主要為（111）取向
密度 / Ho teteana	3.21 g/cm³
硬度 / Ho thatafala	2500 维氏硬度 (moroalo oa 500g)
晶粒大小 / Mabele SiZe	2 ~ 10μm
纯度 / Bohloeki ba lik'hemik'hale	99.99995%
热容 / Bokhoni ba mocheso	640 J·kg^-1·K^-1
升华温度 / Sublimation Mocheso	2700 ℃
抗弯强度 / Flexural Matla	415 MPa RT 4-ntlha
杨氏模量 / Young's Modulus	430 Gpa 4pt kobeha, 1300 ℃
导热系数 / ThermalBoikhantšo	300Wm^-1·K^-1
热膨胀系数 / Katoloso ea Mocheso(CTE)	4.5×10^-6K^-1