Dahaarka SiC/Dahaaran Substrate/Tay Garaafka Dahaarka leh ee Semiconductor

Dahaarka SiC/Dahaaran Substrate/Tay-garafeedka Sawirka Siman-conductor

Sharaxaad Gaaban:

VET Energy SiC Dahaarka Graphite Susceptor for Epitaxial Growth waa badeecad wax qabad sare leh oo loogu talagalay in lagu bixiyo waxqabad joogto ah oo la isku halayn karo muddo dheer. Waxay leedahay caabbinta kulaylka wanaagsan iyo lebiska kulaylka, nadiif sare, caabbinta nabaad-guurka, taas oo ka dhigaysa xalka ugu fiican ee codsiyada wax-qabadka wafer.

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Faahfaahinta Alaabta

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Dahaarka SiC/dahaadhka sawir-qaadista ee Semiconductor

TheSubstrate-ka Dahaarka leh ee SiCwaa xal aad u waara oo hufan oo loogu talagalay in lagu daboolo baahiyaha adag ee warshadaha farsamaynta semiconductor. Muujinaya lakab nadiif ah oo sarreeyadaahan silicon carbide (SiC)., Substrate-kani wuxuu keenaa xasillooni kuleyl gaar ah, iska caabin oksaydh, iyo nolol adeeg oo dheer, taasoo ka dhigaysa mid ku habboon codsiyada hababka MOCVD, sidayaal garaafyada garaafyada ah, iyo deegaan kale oo heerkul sare leh.

Astaamaha:
Caabbinta naxdinta kulaylka ee heer sare ah
Iska caabin naxdin jidheed oo heersare ah
· Iska caabin Kiimiko oo heersare ah
Nadiifinta Sare ee Sare
Helitaanka qaab isku dhafan
Waxaa lagu isticmaali karaa hoostiisa Oxidizing Atmosphere

Codsiga:

Tilmaamaha Alaabta iyo Faa'iidooyinka:

1. Iska caabinta kulaylka sare:Iyada oo nadiif sare lehDahaarka SiC, Substrate-ku wuxuu u adkaystaa heerkul aad u daran, isaga oo hubinaya waxqabadka joogtada ah ee jawiga baahida sida epitaxy iyo samaynta semiconductor.

2. Waaritaanka La Wanaajiyey:Qaybaha garaafka dahaarka leh ee SiC waxaa loogu talagalay inay iska caabiyaan daxalka kiimikaad iyo oksaydhaynta, kordhinta cimriga substrate-ka marka la barbar dhigo substrates garaafyada caadiga ah.

3. Graphite Dahaarka Vitreous:Qaab dhismeedka gaarka ah ee vitreous eeDahaarka SiCwaxay siisaa qallafsanaan heer sare ah oo dusha sare ah, yaraynta jeexjeexa iyo dillaaca inta lagu jiro habaynta heerkulka sare.

4. Nadiifinta Sare ee SiC Coating:Substrate-kayaga ayaa hubiya wasakhda ugu yar ee hababka semiconductor xasaasi ah, oo siinaya isku halaynta warshadaha u baahan daahirnimo adag.

5. Codsiga Suuqa Weyn:TheSiC dahaarka garaafyadasuuqa ayaa sii kordheysa iyadoo baahida loo qabo alaabada dahaarka sare leh ee SiC ee wax soo saarka semiconductor ay kor u kacdo, iyada oo u dhigaysa substrate-ka mid muhiim u ah labada suuqa wafer-garaafyada iyo suuqa silikoon carbide dahaarka leh ee garaafyada.

Astaamaha Caadiga ah ee Qalabka Garaafiga ee Saldhigga:

Cufnaanta muuqata:	1.85 g/cm3
Iska caabin Koronto:	11 μΩm
Xoog Jilicsan:	49 MPa (500kgf/cm2)
Adag ee Xeebta:	58
Dambas:	<5pm
Habdhaqanka Kulaylka:	116 W/mK (100 kcal/mhr-℃)

CVD SiC薄膜基本物理性能 Tilmaamaha asaasiga ah ee CVD SiCdaahan
性质 / Hanti	典型数值 / Qiimaha Caadiga ah
晶体结构 / Crystal Structure	FCC β wajiga 多晶，主要为（111）取向
密度 / Cufnaanta	3.21 g/cm³
硬度 / Adag	2500 维氏硬度（500g oo culeys ah
晶粒大小 / Hadhuudhka SiZe	2 ~ 10μm
纯度 / Nadiifnimada Kiimikada	99.99995%
热容 / Awoodda kulaylka	640 · kg^-1·K^-1
升华温度 / Heerkulka Sublimation	2700 ℃
抗弯强度 / Xoog Jilicsan	415 MPa RT 4-dhibic
杨氏模量 / Da'yarta Modulus	430 Gpa 4pt laab, 1300 ℃
导热系数 / Habdhaqanka kulaylka	300W·m^-1·K^-1
热膨胀系数 / Kordhinta kulaylka(CTE)	4.5×10^-6K^-1

VET Energy waa soo saaraha dhabta ah ee garaafyada la habeeyay iyo alaabada silikoon carbide leh dahaaryo kala duwan sida daahan SiC, daahan TaC, daahan kaarboon dhalo ah, daahan kaarboon pyrolytic, iwm, siin kara qaybo kala duwan oo habaysan ee semiconductor iyo warshadaha photovoltaic.

Kooxdayada farsamo waxay ka yimaadaan hay'adaha cilmi-baarista gudaha ee ugu sarreeya, waxay ku siin karaan xalal qalab xirfadeed oo dheeraad ah adiga.

Waxaan si joogto ah u horumarinaa habab horumarsan si aan u bixinno qalab aad u horumarsan, waxaanan ka shaqeynay tignoolajiyada gaarka ah ee patented, taas oo ka dhigi karta isku xidhka dahaarka iyo substrate-ka mid adag oo u nugul goynta.

Si diiran kuugu soo dhawoow inaad soo booqato warshadeena, aynu wada hadal dheeraad ah yeelano!