Astaamaha:
Caabbinta naxdinta kulaylka ee heer sare ah
Iska caabin naxdin jidheed oo heersare ah
· Iska caabin Kiimiko oo heersare ah
Nadiifinta Sare ee Sare
Helitaanka qaab isku dhafan
Waxaa lagu isticmaali karaa hoostiisa Oxidizing Atmosphere
Codsiga:
Tilmaamaha Alaabta iyo Faa'iidooyinka:
1. Iska caabinta kulaylka sare:Iyada oo nadiif sare lehDahaarka SiC, Substrate-ku wuxuu u adkaystaa heerkul aad u daran, isaga oo hubinaya waxqabadka joogtada ah ee jawiga baahida sida epitaxy iyo samaynta semiconductor.
2. Waaritaanka La Wanaajiyey:Qaybaha garaafka dahaarka leh ee SiC waxaa loogu talagalay inay iska caabiyaan daxalka kiimikaad iyo oksaydhaynta, kordhinta cimriga substrate-ka marka la barbar dhigo substrates garaafyada caadiga ah.
3. Graphite Dahaarka Vitreous:Qaab dhismeedka gaarka ah ee vitreous eeDahaarka SiCwaxay siisaa qallafsanaan heer sare ah oo dusha sare ah, yaraynta jeexjeexa iyo dillaaca inta lagu jiro habaynta heerkulka sare.
4. Nadiifinta Sare ee SiC Coating:Substrate-kayaga ayaa hubiya wasakhda ugu yar ee hababka semiconductor xasaasi ah, oo siinaya isku halaynta warshadaha u baahan daahirnimo adag.
5. Codsiga Suuqa Weyn:TheSiC dahaarka garaafyadasuuqa ayaa sii kordheysa iyadoo baahida loo qabo alaabada dahaarka sare leh ee SiC ee wax soo saarka semiconductor ay kor u kacdo, iyada oo u dhigaysa substrate-ka mid muhiim u ah labada suuqa wafer-garaafyada iyo suuqa silikoon carbide dahaarka leh ee garaafyada.
Astaamaha Caadiga ah ee Qalabka Garaafiga ee Saldhigga:
Cufnaanta muuqata: | 1.85 g/cm3 |
Iska caabin Koronto: | 11 μΩm |
Xoog Jilicsan: | 49 MPa (500kgf/cm2) |
Adag ee Xeebta: | 58 |
Dambas: | <5pm |
Habdhaqanka Kulaylka: | 116 W/mK (100 kcal/mhr-℃) |
CVD SiC薄膜基本物理性能 Tilmaamaha asaasiga ah ee CVD SiCdaahan | |
性质 / Hanti | 典型数值 / Qiimaha Caadiga ah |
晶体结构 / Crystal Structure | FCC β wajiga 多晶,主要为(111)取向 |
密度 / Cufnaanta | 3.21 g/cm³ |
硬度 / Adag | 2500 维氏硬度(500g oo culeys ah |
晶粒大小 / Hadhuudhka SiZe | 2 ~ 10μm |
纯度 / Nadiifnimada Kiimikada | 99.99995% |
热容 / Awoodda kulaylka | 640 · kg-1·K-1 |
升华温度 / Heerkulka Sublimation | 2700 ℃ |
抗弯强度 / Xoog Jilicsan | 415 MPa RT 4-dhibic |
杨氏模量 / Da'yarta Modulus | 430 Gpa 4pt laab, 1300 ℃ |
导热系数 / Habdhaqanka kulaylka | 300W·m-1·K-1 |
热膨胀系数 / Kordhinta kulaylka(CTE) | 4.5×10-6K-1 |
VET Energy waa soo saaraha dhabta ah ee garaafyada la habeeyay iyo alaabada silikoon carbide leh dahaaryo kala duwan sida daahan SiC, daahan TaC, daahan kaarboon dhalo ah, daahan kaarboon pyrolytic, iwm, siin kara qaybo kala duwan oo habaysan ee semiconductor iyo warshadaha photovoltaic.
Kooxdayada farsamo waxay ka yimaadaan hay'adaha cilmi-baarista gudaha ee ugu sarreeya, waxay ku siin karaan xalal qalab xirfadeed oo dheeraad ah adiga.
Waxaan si joogto ah u horumarinaa habab horumarsan si aan u bixinno qalab aad u horumarsan, waxaanan ka shaqeynay tignoolajiyada gaarka ah ee patented, taas oo ka dhigi karta isku xidhka dahaarka iyo substrate-ka mid adag oo u nugul goynta.
Si diiran kuugu soo dhawoow inaad soo booqato warshadeena, aynu wada hadal dheeraad ah yeelano!