SiC Coating Graphite MOCVD Wafer Carriers Susceptors

Sharaxaad Gaaban:

VET Energy SiC Dahaarka MOCVD Susceptor for Epitaxial Growth waa badeecad wax qabad sare leh oo loogu talagalay in lagu bixiyo waxqabad joogto ah oo la isku halayn karo muddo dheer. Waxay leedahay caabbinta kulaylka wanaagsan iyo lebiska kulaylka, nadiif sare, caabbinta nabaad-guurka, taas oo ka dhigaysa xalka ugu fiican ee codsiyada wax-qabadka wafer.

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Faahfaahinta Alaabta

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SiC dahaarka graphite MOCVD Wafer sideyaasha/malaha

Dhammaan kuwa dhibbanayaashayadu waxay ka samaysan yihiin garaafka isostatic-ga xoogga sare leh. Ka faa'iidayso nadiifnimada sare ee garaafyadayada - oo loo sameeyay gaar ahaan hababka adag sida epitaxy, koritaanka crystal, implantation iyo plazma etching, iyo sidoo kale soosaarka chips LED.

Tilmaamaha alaabtayada:

1. Iska caabbinta oksaydhka heerkulka sare ilaa 1700 ℃.
2. Nadiif sare iyo isku mid ahaanshaha kulaylka
3. iska caabin daxalka heer sare ah: acid, alkali, cusbo iyo reagents organic.
4. Adag sare, oogada is haysta, qaybo yaryar.
5. Cimri dheer oo adeeg iyo waarta

CVD SiC薄膜基本物理性能 Tilmaamaha asaasiga ah ee CVD SiCdaahan
性质 / Hanti	典型数值 / Qiimaha caadiga ah
晶体结构 / Dhismaha Crystal	FCC β wejiga多晶，主要为（111) 取向
密度 / Cufnaanta	3.21 g/cm³
硬度 / Adag	2500 维氏硬度（500g oo culeys ah
晶粒大小 / Hadhuudhka Size	2 ~ 10μm
纯度 / Nadiifnimada Kiimikada	99.99995%
热容 / Awoodda kulaylka	640 · kg^-1·K^-1
升华温度 / Heerkulka Sublimation	2700 ℃
抗弯强度 / Xoog Jilicsan	415 MPa RT 4-dhibic
杨氏模量 /Dhallinyarada Modulus	430 Gpa 4pt laab, 1300 ℃
导热系数 / ThermalHab-dhaqanka	300W·m^-1·K^-1
热膨胀系数 / Balaadhinta kulaylka (CTE)	4.5×10^-6K^-1

VET Energy waa soo saaraha dhabta ah ee garaafyada la habeeyay iyo alaabada silikoon carbide leh dahaaryo kala duwan sida daahan SiC, daahan TaC, daahan kaarboon dhalo ah, daahan kaarboon pyrolytic, iwm, siin kara qaybo kala duwan oo habaysan ee semiconductor iyo warshadaha photovoltaic.

Kooxdayada farsamo waxay ka yimaadaan hay'adaha cilmi-baarista gudaha ee ugu sarreeya, waxay ku siin karaan xalal qalab xirfadeed oo dheeraad ah adiga.

Waxaan si joogto ah u horumarinaa habab horumarsan si aan u bixinno qalab aad u horumarsan, waxaanan ka shaqeynay tignoolajiyada gaarka ah ee patented, taas oo ka dhigi karta isku xidhka dahaarka iyo substrate-ka mid adag oo u nugul goynta.

Si diiran kuugu soo dhawoow inaad soo booqato warshadeena, aynu wada hadal dheeraad ah yeelano!