Susceptor graphite dahaarka leh ee SiC waa qayb muhiim ah oo loo isticmaalo hababka wax soo saarka semiconductor ee kala duwan. Waxaan u isticmaalnaa tignoolajiyadayada patented si aan uga dhigno susceptor leh daahir aad u sarreeya, lebis daahan wanaagsan iyo nolol adeeg oo aad u wanaagsan, iyo sidoo kale iska caabbinta kiimikada sare iyo guryaha xasilloonida kuleylka.
Tilmaamaha alaabtayada:
1. Iska caabbinta oksaydhka heerkulka sare ilaa 1700 ℃.
2. Nadiif sare iyo isku mid ahaanshaha kulaylka
3. iska caabin daxalka heer sare ah: acid, alkali, cusbo iyo reagents organic.
4. Qalafsanaan sare, oogada is haysta, qaybo yaryar.
5. Cimri dheer oo adeeg iyo waarta
CVD SiC薄膜基本物理性能 Tilmaamaha asaasiga ah ee CVD SiCdaahan | |
性质 / Hanti | 典型数值 / Qiimaha caadiga ah |
晶体结构 / Dhismaha Crystal | FCC β wejiga多晶,主要为(111) 取向 |
密度 / Cufnaanta | 3.21 g/cm³ |
硬度 / Adag | 2500 维氏硬度(500g oo culeys ah |
晶粒大小 / Hadhuudhka Size | 2 ~ 10μm |
纯度 / Nadiifnimada Kiimikada | 99.99995% |
热容 / Awoodda kulaylka | 640 · kg-1·K-1 |
升华温度 / Heerkulka Sublimation | 2700 ℃ |
抗弯强度 / Xoog Jilicsan | 415 MPa RT 4-dhibic |
杨氏模量 Modulka da'da yar | 430 Gpa 4pt laab, 1300 ℃ |
导热系数 / ThermalHab-dhaqanka | 300W·m-1·K-1 |
热膨胀系数 / Balaadhinta kulaylka (CTE) | 4.5×10-6K-1 |
VET Energy waa soo saaraha dhabta ah ee garaafyada la habeeyay iyo alaabada silikoon carbide leh dahaaryo kala duwan sida daahan SiC, daahan TaC, daahan kaarboon dhalo ah, daahan kaarboon pyrolytic, iwm, siin kara qaybo kala duwan oo habaysan ee semiconductor iyo warshadaha photovoltaic.
Kooxdayada farsamo waxay ka yimaadaan hay'adaha cilmi-baarista gudaha ee ugu sarreeya, waxay ku siin karaan xalal qalab xirfadeed oo dheeraad ah adiga.
Waxaan si joogto ah u horumarinaa habab horumarsan si aan u bixinno qalab aad u horumarsan, waxaanan ka shaqeynay tignoolajiyada gaarka ah ee patented, taas oo ka dhigi karta isku xidhka dahaarka iyo substrate-ka mid adag oo u nugul goynta.
Si diiran kuugu soo dhawoow inaad soo booqato warshadeena, aynu wada hadal dheeraad ah yeelano!