English

Wararka

  • Maxay yihiin caqabadaha farsamo ee hortaagan carbide silicon?Ⅱ

    Maxay yihiin caqabadaha farsamo ee hortaagan carbide silicon?Ⅱ

    Dhibaatooyinka farsamada ee soosaarida tayada sare leh ee silikoon carbide wafers leh waxqabad xasiloon waxaa ka mid ah: 1) Maadaama kiristaalo ay u baahan yihiin inay ku koraan jawi heerkul sare leh oo daboolan oo ka sarreeya 2000 ° C, shuruudaha xakamaynta heerkulku aad ayey u sarreeyaan; 2) Maadaama silicon carbide uu leeyahay wax badan ...
    Sii akhri
  • Waa maxay caqabadaha farsamo ee ku wajahan carbide silicon?

    Waa maxay caqabadaha farsamo ee ku wajahan carbide silicon?

    Jiilka koowaad ee qalabka semiconductor waxaa matalaya silikoon dhaqameed (Si) iyo germanium (Ge), kuwaas oo saldhig u ah soosaarka wareegga isku dhafan. Waxaa si weyn loogu isticmaalaa koronto-yar, soo noqnoqosho hoose, iyo koronto-yar iyo koronto-yaqaano. In ka badan 90% ee wax soo saarka semiconductor...
    Sii akhri
  • Sidee loo sameeyaa budada yar ee SiC?

    Sidee loo sameeyaa budada yar ee SiC?

    SiC single crystal waa koox IV-IV walax semiconductor ah oo ka kooban laba walxood, Si iyo C, oo ku jira saamiga stoichiometric ee 1: 1. Adaggeeda ayaa ka xigta dheemanka kaliya. Yaraynta kaarboon ee habka silicon oxide si loogu diyaariyo SiC waxay inta badan ku salaysan tahay qaacidada falcelinta kiimikada ee soo socota
    Sii akhri
  • Sidee lakabyada epitaxial u caawiyaan qalabka semiconductor?

    Sidee lakabyada epitaxial u caawiyaan qalabka semiconductor?

    Asalka magaca waferka epitaxial Marka hore, aan faafinno fikrad yar: diyaarinta wafer-ka waxaa ka mid ah laba xiriiriye oo waaweyn: diyaarinta substrate iyo habka epitaxial. Substrate-ku waa wafer ka samaysan hal walxo semiconductor. Substrate-ku wuxuu si toos ah u gali karaa wax soo saarka waferka...
    Sii akhri
  • Hordhac u dhigista uumiga kiimikada (CVD) tignoolajiyada dhigista filim khafiif ah

    Hordhac u dhigista uumiga kiimikada (CVD) tignoolajiyada dhigista filim khafiif ah

    Kaydinta Uumiga Kiimikada (CVD) waa tignoolajiyada kaydinta filimka khafiifka ah ee muhiimka ah, oo inta badan loo isticmaalo diyaarinta filimo shaqeynaya oo kala duwan iyo agab khafiif ah, waxaana si weyn loogu isticmaalaa wax soo saarka semiconductor iyo qaybaha kale. 1. Mabda'a shaqada ee CVD Habka CVD, horudhac gaas ah (hal ama bil...
    Sii akhri
  • Sirta "dahab madow" ee ka dambeysa warshadaha semiconductor photovoltaic: rabitaanka iyo ku tiirsanaanta garaafka isostatic

    Sirta "dahab madow" ee ka dambeysa warshadaha semiconductor photovoltaic: rabitaanka iyo ku tiirsanaanta garaafka isostatic

    Garaafyada Isostatic waa walxo aad muhiim u ah sawiradavoltaics iyo semiconductors. Iyada oo kor u kaca degdega ah ee shirkadaha graphite ee gudaha, keli-taliska shirkadaha shisheeye ee Shiinaha waa la jabiyay. Iyadoo cilmi-baaris madax-bannaan oo joogto ah iyo horumarin iyo horumar tignoolajiyadeed, ...
    Sii akhri
  • Daah-furka Astaamaha Muhiimka ah ee Doomaha Graphite ee Wax-soo-saarka Ceramics Semiconductor

    Daah-furka Astaamaha Muhiimka ah ee Doomaha Graphite ee Wax-soo-saarka Ceramics Semiconductor

    Doomaha Graphite, oo sidoo kale loo yaqaan doomaha garaafka, ayaa door muhiim ah ka ciyaara hababka qalafsan ee soo saarista dhoobada semiconductor. Maraakiibtan khaaska ah waxay u adeegaan sidayaal la isku halayn karo oo loogu talagalay waferrada semiconductor inta lagu jiro daawaynta heerkulka sare, hubinta habka saxda ah iyo kantaroolka. Iyadoo...
    Sii akhri
  • Qaab dhismeedka gudaha ee qalabka tubbada foornada ayaa si faahfaahsan loo sharaxay

    Qaab dhismeedka gudaha ee qalabka tubbada foornada ayaa si faahfaahsan loo sharaxay

    Sida kor ku cad, waa wax caadi ah Qaybta hore: Kuleyliyaha Cunsurka (kuleelka gariiradda): ku yaal agagaarka tuubada foornada, oo badanaa laga sameeyo fiilooyinka iska caabbinta, loo isticmaalo in lagu kululeeyo gudaha tuubada foornada. Quartz Tube: Xuddunta foornada oksaydhka kulul, oo ka samaysan quartz saafi ah oo sarreeya oo adkaysi kara
    Sii akhri
  • Saamaynta substrate-ka SiC iyo agabka epitaxial ee astaamaha aaladda MOSFET

    Saamaynta substrate-ka SiC iyo agabka epitaxial ee astaamaha aaladda MOSFET

    Cilladaha saddex-geesoodka ah ciladaha saddex-geesoodka ah ayaa ah cilladaha ugu dhimashada badan ee lakabyada epitaxial SiC. Tiro badan oo warbixinno suugaaneed ah ayaa muujiyay in samaynta cilladaha saddex-geesoodka ah ay la xiriirto qaabka crystal 3C. Si kastaba ha ahaatee, iyadoo ay ugu wacan tahay habab koritaan oo kala duwan, morphology ee qaar badan oo tr ah ...
    Sii akhri
<< kii hore2345678Xiga >>> Bogga 5/56
WhatsApp Online chat!