Khadka wax soo saarka VET Energy kuma koobna GaN ee waferrada SiC. Waxaan sidoo kale bixinnaa agabyo kala duwan oo ah substrate-ka, oo ay ku jiraan Si Wafer, Substrate SiC, SOI Wafer, SiN Substrate, Epi Wafer, iwm. Wafer, si loo daboolo baahida warshadaha elektiroonigga mustaqbalka ee aaladaha waxqabadka sare.
VET Energy waxay bixisaa adeegyo is-beddelid dabacsan, waxayna habayn kartaa lakabyada epitaxial GaN ee dhumucdooda kala duwan, noocyada kala duwan ee doping-ka, iyo cabbirrada waferka ee kala duwan iyadoo loo eegayo baahiyaha gaarka ah ee macaamiisha. Intaa waxaa dheer, waxaan sidoo kale bixinnaa taageero farsamo oo xirfad leh iyo adeegga iibka kadib si aan uga caawino macaamiisha inay si dhakhso ah u horumariyaan qalabka elektiroonigga ah ee wax-qabadka sare leh.
QEEXIDDA WAFERING
*n-Pm=n-nooca Pm-Grade,n-Ps=n-nooca Ps-Grade,Sl=Semi-lnsulating
Shayga | 8-inch | 6-inch | 4-inji | ||
nP | n-Pm | n-Ps | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Qaanso(GF3YFCD) -Qiimaha saxda ah | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
DHULKA DHAMMAAN
*n-Pm=n-nooca Pm-Grade,n-Ps=n-nooca Ps-Grade,Sl=Semi-lnsulating
Shayga | 8-inch | 6-inch | 4-inji | ||
nP | n-Pm | n-Ps | SI | SI | |
Dhamaystir dusha sare | Polish indhaha laba-geesoodka ah,Si- Waji CMP | ||||
Dusha sareynta | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Chips Edge | Midna Lama ogola (dhererka iyo ballaca≥0.5mm) | ||||
Indents | Midna lama ogola | ||||
xoqid (Si-Waji) | Qty.≤5, Wadar ah | Qty.≤5, Wadar ah | Qty.≤5, Wadar ah | ||
dildilaaca | Midna lama ogola | ||||
Ka saarida gees | 3mm |