VET Energy inoshandisa ultra-high kuchenasilicon carbide (SiC)inoumbwa nemakemikari vapor deposition(CVD)sechinhu chinobva pakukuraSiC makristasiby physical vapor transport (PVT). MuPVT, iyo sosi zvinhu inoiswa mu acrucibleuye yakanyungudutswa pakristaro yembeu.
Kuchena kwepamusoro kunodiwa kugadzira mhando yepamusoroSiC makristasi.
VET Energy inyanzvi pakupa hombe-chimedu SiC yePVT nekuti ine huremu hwepamusoro pane diki-tidiki zvinhu zvinoumbwa nekupisa kwega kweSi uye C-ine magasi. Kusiyana yakasimba-chikamu sintering kana kuita kweSi uye C, haidi yakatsaurirwa choto chemoto kana nhanho-inopedza nguva sintering muchoto chekukura. Iyi hombe-particle material ine inenge inogara ichivharika mwero, iyo inovandudza run-to-run kufanana.
Nhanganyaya:
1. Gadzirira CVD-SiC block source: Kutanga, unofanirwa kugadzirira CVD-SiC block source yepamusoro, iyo inowanzova yekuchena kwepamusoro uye yakakwirira. Izvi zvinogona kugadzirwa nemakemikari vapor deposition (CVD) nzira pasi pemamiriro ekuita akakodzera.
2. Kugadzirira kwesubstrate: Sarudza substrate yakakodzera se substrate yeSiC single crystal kukura. Zvinowanzoshandiswa substrate zvinhu zvinosanganisira silicon carbide, silicon nitride, nezvimwewo, izvo zvine mucheno wakanaka nekukura SiC imwe crystal.
3. Kupisa uye kuderera: Isai CVD-SiC block source uye substrate muchoto chepamusoro uye ipai zvakakodzera sublimation mamiriro. Sublimation inoreva kuti pakupisa kwepamusoro, iyo block sosi inoshanduka yakananga kubva pakasimba kuenda kune mhute, uye yobva yadzoreredza pane substrate pamusoro kuti igadzire imwe kristaro.
4. Kudzora kwekushisa: Munguva ye sublimation process, tembiricha gradient uye kugovera tembiricha inoda kunyatsodzorwa kuti ikurudzire sublimation ye block sosi uye kukura kwemakristasi imwechete. Kudzora tembiricha kwakaringana kunogona kuwana yakanakisa mhando yekristaro uye mwero wekukura.
5. Atmosphere control: Munguva ye sublimation process, reaction atmosphere inodawo kudzorwa. High-purity inert gas (yakadai seargon) inowanzoshandiswa semutakuri gasi kuchengetedza kumanikidzwa kwakakodzera uye kuchena uye kudzivirira kusvibiswa nekusvibiswa.
6. Single crystal growth: The CVD-SiC block source inopinda vapor phase transition panguva ye sublimation process uye inodzokorora pa substrate surface kuti iite imwechete crystal structure. Kukura nekukurumidza kweSiC imwe makristasi inogona kuwanikwa kuburikidza neakakodzera sublimation mamiriro uye tembiricha gradient kutonga.
Tikugashirei noushamwari kuti ushanyire fekitari yedu, ngativei neimwe hurukuro!
