Silicon Carbide Wafer Disc o se vaega autu o loʻo faʻaaogaina i le tele o faiga gaosiga o semiconductor. matou te faʻaogaina a matou tekonolosi pateni e faʻaogaina ai le silicon carbide tisiki saogalemu ma le mama sili ona maualuga, lelei faʻapipiʻiina tutusa ma se olaga sili ona lelei, faʻapea foʻi ma le maualuga o vailaʻau faʻamaʻi ma mea faʻamautu vevela.
O le VET Energy o le gaosiga moni o graphite faʻapitoa ma oloa carbide silikoni ma faʻaofuofu eseese e pei o SiC, TaC, pyrolytic carbon, glassy-carbon, ma isi, e mafai ona tuʻuina atu vaega faʻapitoa mo semiconductor ma photovoltaic alamanuia. O la matou 'au fa'atekinisi e sau mai fa'alapotopotoga su'esu'e fa'apitonu'u pito i luga, e mafai ona tu'uina atu fa'afitauli fa'apitoa fa'apitoa mo oe.
O lo'o fa'aauau pea ona matou fa'atupuina faiga fa'agasolo e tu'uina atu ai mea e sili atu ona maualuga, ma ua fa'atinoina se tekonolosi pateni fa'apitoa, lea e mafai ona fa'amalosia atili ai le so'otaga i le va o le fa'apipi'i ma le mea fa'apipi'i ma fa'aitiitia ai le fa'ateteleina.
Ftulaga oa tatou oloa:
1. maualuga le vevela oxidation tetee atu i le 1700℃.
2. maualuga mama matutusa vevela
3. Lelei le fa'afefeteina: acid, alkali, masima ma meaola fa'aola.
4. Maaa maualuga, faʻapipiʻi luga, vaega laiti.
5. Le soifua tautua umi ma sili atu le umi
| CVD SiC薄膜基本物理性能 Meatino fa'aletino autu o le CVD SiCufiufi | |
| 性质 / Meatotino | 典型数值 / Taua masani |
| 晶体结构 / Fa'a tioata | FCC β vaega多晶，主要为（111）取向 |
| 密度 / Malosi | 3.21 g/cm³ |
| 硬度 / Maaa | 2500 维氏硬度（500g uta） |
| 晶粒大小 / Saito Tele | 2~10μm |
| 纯度 / Vailaau Mama | 99.99995% |
| 热容 / Malosiaga vevela | 640 J·kg-1·K-1 |
| 升华温度 / Sulimation Temperature | 2700 ℃ |
| 抗弯强度 / Malosi Fa'alilolilo | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt pi'o, 1300 ℃ |
| 导热系数 / ThermalConductivity | 300W·m-1·K-1 |
| 热膨胀系数 / Fa'alauteleina o le vevela(CTE) | 4.5×10-6K-1 |
Faʻafeiloaʻi faʻafeiloaʻi oe e asiasi i la matou falegaosimea, seʻi o tatou faia nisi talanoaga!
