SiC Coated Graphite Carriers, sic coating, SiC coating coated of Graphite substrate mo Semiconductor

Silicon carbide ufiufigraphite tisiki o le saunia lea o le lapisi puipuia o le carbide silicon i luga o le graphite e ala i le teuina o ausa faaletino poʻo vailaʻau ma faʻasalaina. E mafai ona faʻapipiʻi mau le faʻapipiʻiina o le carbide silicon carbide i le graphite matrix, e faʻapipiʻi ai le pito i luga o le graphite ma le leai o se avanoa, e tuʻuina atu ai le graphite matrix mea faʻapitoa, e aofia ai le faʻamaʻiina o le oxidation, acid and alkali resistance, erosion resistance, corrosion resistance, ma isi I le taimi nei, Gan coating o se tasi o vaega autu sili mo le tuputupu aʻe epitaxial o carbide silicon.

Silicon carbide semiconductor o le mea autu lea o le semiconductor gap gap fou faatoa atiae. O ana masini o loʻo i ai uiga o le maualuga o le vevela, maualuga le malosi o le voltage, maualuga taimi, maualuga le malosi ma le faʻavevela. O loʻo i ai le lelei o le saoasaoa o le fesuiaiga o le saoasaoa ma le maualuga maualuga. E mafai ona fa'aitiitia tele le fa'aaogaina o le eletise, fa'aleleia le fa'aliliuina o le malosi ma fa'aitiitia le tele o oloa. E masani ona faʻaaogaina i le 5g fesoʻotaʻiga, puipuiga a le atunuʻu ma alamanuia militeri O le fanua RF o loʻo faʻatusalia e le aerospace ma le eletise eletise eletise o loʻo faʻatusalia e taavale fou malosi ma "mea fou fou" o loʻo i ai le manino ma le tele o maketi maketi i le va o tagata ma le militeri.

Silicon carbide substrate o le mea autu lea o le semiconductor gap gap fou faatoa atiae. Silicon carbide substrate e masani ona faʻaaogaina i masini eletise microwave, eletise eletise ma isi fanua. O lo'o i le pito i luma o le laina lautele gap gap semiconductor alamanuia filifili ma o le tipi-pito ma autu autu material.Silicon carbide substrate e mafai ona vaevaeina i ni ituaiga se lua: semi insulating ma conductive. Faatasi ai ma i latou, semi insulating silicon carbide substrate maualuga resistivity (resistivity ≥ 105 Ω· cm). Semi insulate substrate tu'ufa'atasia ma heterogeneous gallium nitride epitaxial pepa e mafai ona fa'aaogaina e fai ma mea o masini RF, lea e masani ona fa'aaogaina i le 5g feso'otaiga, puipuiga a le atunu'u ma alamanuia militeri i vaaiga i luga; O le isi o le conductive silicon carbide substrate ma maualalo resistivity (o le resistivity laina o 15 ~ 30m Ω· cm). O le epitaxy tutusa o le conductive silicon carbide substrate ma silicon carbide e mafai ona faʻaaogaina e fai ma mea mo masini eletise. O faʻataʻitaʻiga autu o faʻataʻitaʻiga o taʻavale eletise, faiga eletise ma isi faʻalapotopotoga