Silicon carbide ufiufi susceptor oa kivaega o lo'o fa'aaogaina i faiga eseese o le gaosiga o le semiconductor.Matou te fa'aogaina a matou tekonolosi pateni e fai ai le susceptor fa'apipi'iina le silicon carbidemaualuga maualuga le mama,leleiufiufitutusama se olaga tautua lelei, faa;pei foi onamaualuga le tetee atu i kemikolo ma mea mautu vevela.
VET Malosiaga o o legaosi moni o graphite faʻapitoa ma oloa kalisika carbide faʻatasi ma le CVD coating,mafai ona sapalaieseesevaega fa'apitoa mo semiconductor ma photovoltaic alamanuia. Our vaega faʻapitoa e sau mai faʻalapotopotoga suʻesuʻe pito i luga, e mafai ona tuʻuina atu faʻamatalaga faʻapitoa faʻapitoamo oe.
Matou te faʻaauau pea ona atiaʻe faʻagasologa alualu i luma e tuʻuina atu mea e sili atu ona maualuga,maua galue i fafo se tekinolosi pateni faapitoa, lea e mafai ona faia le sootaga i le va o le ufiufi ma le substrate faʻamalosi ma faʻaitiitia ai le faʻalavelave.
Ftulaga oa tatou oloa:
1. maualuga le vevela oxidation tetee atu i le 1700℃.
2. maualuga mama matutusa vevela
3. Lelei le fa'afefeteina: acid, alkali, masima ma meaola fa'aola.
4. Maaa maualuga, faʻapipiʻi luga, vaega laiti.
5. Le soifua tautua umi ma sili atu le umi
| CVD SiC薄膜基本物理性能 Meatino fa'aletino autu o le CVD SiCufiufi | |
| 性质 / Meatotino | 典型数值 / Taua masani |
| 晶体结构 / Fa'a tioata | FCC β vaega多晶，主要为（111）取向 |
| 密度 / Malosi | 3.21 g/cm³ |
| 硬度 / Maaa | 2500 维氏硬度（500g uta） |
| 晶粒大小 / Saito Tele | 2~10μm |
| 纯度 / Vailaau Mama | 99.99995% |
| 热容 / Malosiaga vevela | 640 J·kg-1·K-1 |
| 升华温度 / Sulimation Temperature | 2700 ℃ |
| 抗弯强度 / Malosi Fa'alilolilo | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt pi'o, 1300 ℃ |
| 导热系数 / ThermalConductivity | 300W·m-1·K-1 |
| 热膨胀系数 / Fa'alauteleina o le vevela(CTE) | 4.5×10-6K-1 |
Faʻafeiloaʻi faʻafeiloaʻi oe e asiasi i la matou falegaosimea, seʻi o tatou faia nisi talanoaga!
