Silicon Carbide (SiC) Epitaxial Wafer

VET Ingufu za silicon karbide (SiC) epitaxial wafer nigikoresho kinini cyagutse cya bandgap semiconductor hamwe nubushyuhe buhebuje bwo hejuru, ubushyuhe bwinshi nibiranga ingufu nyinshi. Nibisobanuro byiza kubisekuru bishya byibikoresho bya elegitoroniki. Ingufu za VET zikoresha tekinoroji ya MOCVD igezweho kugirango ikure ibice byiza bya SiC epitaxial kurwego rwa SiC, byemeza imikorere myiza kandi ihamye ya wafer.

Silicon Carbide (SiC) Epitaxial Wafer itanga ubwuzuzanye buhebuje hamwe nibikoresho bitandukanye bya semiconductor birimo Si Wafer, SiC Substrate, SOI Wafer, na SiN Substrate. Hamwe na epitaxial layer ikomeye, ishyigikira inzira ziterambere nko gukura kwa Epi Wafer no guhuza ibikoresho nka Gallium Oxide Ga2O3 na AlN Wafer, bigatuma ikoreshwa muburyo butandukanye muburyo butandukanye. Yashizweho kugirango ihuze ninganda-isanzwe ya Cassette ikora sisitemu, itanga imikorere inoze kandi yoroheje mubikorwa bya semiconductor.

Umurongo wibicuruzwa bya VET ntabwo bigarukira gusa kuri waf epitaxial wafers. Dutanga kandi ibikoresho byinshi bya semiconductor substrate, harimo Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, nibindi. Byongeye kandi, turimo guteza imbere cyane ibikoresho bishya bigari bya semiconductor, nka Gallium Oxide Ga2O3 na AlN Wafer, kugirango uhuze ejo hazaza ingufu za elegitoroniki yinganda zikenewe kubikoresho bikora neza.