Silicon Carbide Epitaxial Sheet Tray Kuri Semiconductor Epitaxial Furnace

Ibisobanuro bigufi:

VET Ingufu Silicon Carbide Epitaxial Sheet Tray nigicuruzwa cyiza cyane cyagenewe gutanga imikorere ihamye kandi yizewe mugihe kinini. Ifite ubushyuhe bwiza cyane hamwe nubushyuhe bwumuriro, ubuziranenge bwinshi, kurwanya isuri, bigatuma biba igisubizo cyiza kubisabwa gutunganya wafer.

Ohereza imeri kuri twe Kuramo nka PDF

Ibicuruzwa birambuye

Ibicuruzwa

Urupapuro rwa silicon karbide ni ikintu cyingenzi gikoreshwa muburyo butandukanye bwo gukora igice cya kabiri. Twifashishije tekinoroji yacu yemewe kugirango dukore urupapuro rwa silicon karbide yamashanyarazi hamwe nubuziranenge buhebuje, uburinganire bwiza hamwe nubuzima bwiza bwa serivisi, hamwe n’imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.

VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide ifite ibifuniko bitandukanye nka SiC, Tac, karubone ya pyrolytike, karuboni yikirahure, nibindi., Irashobora gutanga ibice bitandukanye byabigenewe kubice bya semiconductor ninganda zifotora. Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.

Ibiranga ibicuruzwa byacu:

1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700 ℃.
2. Isuku ryinshi nuburinganire bwumuriro
3. Kurwanya ruswa nziza cyane: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba

CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira
性质 / Umutungo	典型数值 / Agaciro gasanzwe
晶体结构 / Imiterere ya Crystal	FCC β icyiciro多晶，主要为（111 ）取向
密度 Ubucucike	3.21 g / cm³
硬度 / Gukomera	2500 维氏硬度（ 500g umutwaro）
晶粒大小 / Ibinyampeke SiZe	2 ~ 10 mm
纯度 / Ubuziranenge bwa Shimi	99.99995%
热容 / Ubushyuhe	640 J · kg^-1· K.^-1
升华温度 / Ubushyuhe bwo hejuru	2700 ℃
抗弯强度 / Imbaraga zoroshye	415 MPa RT amanota 4
杨氏模量 / Modulus	430 Gpa 4pt yunamye, 1300 ℃
导热系数 / ThermalImyitwarire	300W · m^-1· K.^-1
热膨胀系数 Kwagura Ubushyuhe (CTE)	4.5 × 10^-6K^-1