Silicon Carbide Yashizweho Wafer Susceptor Disc

Ibisobanuro bigufi:

VET Ingufu za silicon karbide yometse kuri wafer susceptor disiki nigicuruzwa cyiza cyane cyagenewe gutanga imikorere ihamye kandi yizewe mugihe kinini. Ifite ubushyuhe bwiza cyane hamwe nubushyuhe bwumuriro, ubuziranenge bwinshi, kurwanya isuri, bigatuma biba igisubizo cyiza kubisabwa gutunganya wafer.


Ibicuruzwa birambuye

Ibicuruzwa

Silicon Carbide Wafer Disc nikintu cyingenzi gikoreshwa muburyo butandukanye bwo gukora semiconductor. dukoresha tekinoroji yacu yemewe kugirango dukore silicon karbide itekanye ifite isuku irenze urugero, uburinganire bwiza hamwe nubuzima bwiza bwa serivisi, hamwe n’imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.

VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide ifite ibifuniko bitandukanye nka SiC, TaC, karubone ya pyrolytike, ibirahuri-karubone, nibindi., Irashobora gutanga ibice bitandukanye byabigenewe kubice bya semiconductor ninganda zifotora. Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.

Fibiryo byibicuruzwa byacu:

1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700.
2. Isuku ryinshi kandiuburinganire bwumuriro
3. Kurwanya ruswa nziza: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba

CVD SiC薄膜基本物理性能

Ibyingenzi bifatika bya CVD SiCgutwikira

性质 / Umutungo

典型数值 / Agaciro gasanzwe

晶体结构 / Imiterere ya Crystal

FCC β icyiciro多晶,主要为(111 )取向

密度 Ubucucike

3.21 g / cm³

硬度 / Gukomera

2500 维氏硬度( 500g umutwaro)

晶粒大小 / Ibinyampeke SiZe

2 ~ 10 mm

纯度 / Ubuziranenge bwa Shimi

99.99995%

热容 / Ubushyuhe

640 J · kg-1· K.-1

升华温度 / Ubushyuhe bwo hejuru

2700 ℃

抗弯强度 / Imbaraga zoroshye

415 MPa RT amanota 4

杨氏模量 / Modulus

430 Gpa 4pt yunamye, 1300 ℃

导热系数 / ThermalImyitwarire

300W · m-1· K.-1

热膨胀系数 Kwagura Ubushyuhe (CTE)

4.5 × 10-6K-1

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