Silicon Carbide Wafer Disc nikintu cyingenzi gikoreshwa muburyo butandukanye bwo gukora semiconductor. dukoresha tekinoroji yacu yemewe kugirango dukore silicon karbide itekanye ifite isuku irenze urugero, uburinganire bwiza hamwe nubuzima bwiza bwa serivisi, hamwe n’imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.
VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide ifite ibifuniko bitandukanye nka SiC, TaC, karubone ya pyrolytike, ibirahuri-karubone, nibindi., Irashobora gutanga ibice bitandukanye byabigenewe kubice bya semiconductor ninganda zifotora. Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.
Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.
Fibiryo byibicuruzwa byacu:
1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700℃.
2. Isuku ryinshi kandiuburinganire bwumuriro
3. Kurwanya ruswa nziza: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba
CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira | |
性质 / Umutungo | 典型数值 / Agaciro gasanzwe |
晶体结构 / Imiterere ya Crystal | FCC β icyiciro多晶,主要为(111 )取向 |
密度 Ubucucike | 3.21 g / cm³ |
硬度 / Gukomera | 2500 维氏硬度( 500g umutwaro) |
晶粒大小 / Ibinyampeke SiZe | 2 ~ 10 mm |
纯度 / Ubuziranenge bwa Shimi | 99.99995% |
热容 / Ubushyuhe | 640 J · kg-1· K.-1 |
升华温度 / Ubushyuhe bwo hejuru | 2700 ℃ |
抗弯强度 / Imbaraga zoroshye | 415 MPa RT amanota 4 |
杨氏模量 / Modulus | 430 Gpa 4pt yunamye, 1300 ℃ |
导热系数 / ThermalImyitwarire | 300W · m-1· K.-1 |
热膨胀系数 Kwagura Ubushyuhe (CTE) | 4.5 × 10-6K-1 |
Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!