Ibiranga:
· Kurwanya Ubushuhe buhebuje
· Kurwanya umubiri mwiza cyane
· Kurwanya imiti nziza cyane
· Ubuziranenge buhebuje
· Kuboneka muburyo bugoye
· Irakoreshwa munsi ya Oxidizing Atmosphere
Gusaba :
Ibintu bisanzwe bya Base Graphite Ibikoresho:
Ubucucike bugaragara: | 1,85 g / cm3 |
Kurwanya amashanyarazi: | 11 μΩm |
Icyerekezo cyoroshye: | 49 MPa (500kgf / cm2) |
Gukomera ku nkombe: | 58 |
Ivu: | <5ppm |
Amashanyarazi: | 116 W / mK (100 kcal / mhr- ℃) |
CVD SiC薄膜 基本 物理 性能 Ibyingenzi bifatika bya CVD SiCgutwikira | |
性质 / Umutungo | 典型 数值 / Agaciro gasanzwe |
晶体 结构 / Imiterere ya Crystal | FCC β icyiciro 多 晶 , 主要 为 (111) 取向 |
Ubucucike | 3.21 g / cm³ |
硬度 / Gukomera | 2500 维 氏 硬度 (500g umutwaro) |
晶粒 / Grain SiZe | 2 ~ 10 mm |
纯度 / Ubuziranenge bwa Shimi | 99.99995% |
热 容 / Ubushyuhe | 640 J · kg-1· K.-1 |
升华 温度 / Ubushyuhe bwo hejuru | 2700 ℃ |
抗弯 强度 / Imbaraga zoroshye | 415 MPa RT amanota 4 |
Mod 模 量 / Modulus | 430 Gpa 4pt yunamye, 1300 ℃ |
导热 系数 / Ubushyuhe bwumuriro | 300W · m-1· K.-1 |
热 膨胀 系数 / Kwagura Ubushyuhe (CTE) | 4.5 × 10-6K-1 |
VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide hamwe nububiko butandukanye nka SiC coating, TaC coating, carbone carbone coating, pyrolytic carbone coating, nibindi, birashobora gutanga ibice bitandukanye byabigenewe kubice bya semiconductor ninganda zifotora.
Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.
Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.
Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!