SiC Coating / Coated Graphite Substrate / Tray ya Semiconductor

Igicapo cya SiC / Gishushanyijeho Graphite Substrate / Gari ya Semiconductor Yerekanwe Ishusho

Ibisobanuro bigufi:

VET Ingufu SiC Yashushanyije Graphite Susceptor yo Gukura Epitaxial nigicuruzwa cyiza cyane cyagenewe gutanga imikorere ihamye kandi yizewe mugihe kinini. Ifite ubushyuhe bwiza cyane hamwe nubushyuhe bwumuriro, ubuziranenge bwinshi, kurwanya isuri, bigatuma biba igisubizo cyiza kubisabwa gutunganya wafer.

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Ibicuruzwa birambuye

Ibicuruzwa

SiC gutwikira / gutwikiriye Graphite susceptor ya Semiconductor

UwitekaSiC Yashushanyijeho Graphite Substrateni igisubizo kirambye kandi cyiza cyateguwe kugirango gihuze ibyifuzo byinganda zitunganya semiconductor. Kugaragaza urwego rwubuziranengesilicon karbide (SiC).

Ibiranga:
· Kurwanya Ubushuhe buhebuje
· Kurwanya umubiri mwiza cyane
· Kurwanya imiti nziza cyane
· Ubuziranenge buhebuje
· Kuboneka muburyo bugoye
· Irakoreshwa munsi ya Oxidizing Atmosphere

Gusaba ：

Ibiranga ibicuruzwa nibyiza:

1. Kurwanya Ubushyuhe Bwinshi:Hamwe no kwera cyaneSiC, substrate ihanganira ubushyuhe bukabije, ikemeza imikorere ihamye mubidukikije bisabwa nka epitaxy na semiconductor guhimba.

2. Kongera igihe kirekire:Ibice bya SiC bifatanyijemo ibishushanyo mbonera bigamije kurwanya ruswa ya chiside na okiside, byongera igihe cyo kubaho kwa substrate ugereranije nubusanzwe busanzwe bwa grafite.

3. Vitreous Coated Graphite:Imiterere yihariye ya vitreous yaSiCitanga ubukana buhebuje, kugabanya kwambara no kurira mugihe cyo gutunganya ubushyuhe bwinshi.

4. Igikoresho kinini cya SiC:Substrate yacu itanga umwanda muke mubikorwa byoroshye bya semiconductor, itanga kwizerwa mubikorwa bisaba ubuziranenge bwibintu.

5. Gusaba isoko ryagutse:UwitekaSiC yatwikiriye grafite susceptorisoko rikomeje kwiyongera mugihe icyifuzo cyibicuruzwa bya SiC byateye imbere mu nganda zikoresha semiconductor byiyongera, bigashyira iyi substrate nkumukinyi wingenzi mumasoko yabatwara grafite wafer hamwe na silicon karbide yatwikiriye isoko ya grafite.

Ibintu bisanzwe bya Base Graphite Ibikoresho:

Ubucucike bugaragara:	1,85 g / cm3
Kurwanya amashanyarazi:	11 μΩm
Icyerekezo cyoroshye:	49 MPa (500kgf / cm2)
Gukomera ku nkombe:	58
Ivu:	<5ppm
Amashanyarazi:	116 W / mK (100 kcal / mhr- ℃)

CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira
性质 / Umutungo	典型数值 / Agaciro gasanzwe
/ Imiterere ya Crystal	FCC β icyiciro 多晶，主要为（ 111 ）取向
Ubucucike	3.21 g / cm³
硬度 / Gukomera	2500 维氏硬度（ 500g umutwaro）
晶粒大小 / Ingano SiZe	2 ~ 10 mm
纯度 / Ubuziranenge bwa Shimi	99.99995%
热容 / Ubushyuhe	640 J · kg^-1· K.^-1
升华温度 / Ubushyuhe bwo hejuru	2700 ℃
抗弯强度 / Imbaraga zidasanzwe	415 MPa RT amanota 4
Mod Modulus	430 Gpa 4pt yunamye, 1300 ℃
导热系数 / Ubushyuhe bwumuriro	300W · m^-1· K.^-1
热膨胀系数 / Kwagura Ubushyuhe (CTE)	4.5 × 10^-6K^-1

VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide hamwe nububiko butandukanye nka SiC coating, TaC coating, carbone carbone coating, pyrolytic carbone coating, nibindi, birashobora gutanga ibice bitandukanye byabigenewe kubice bya semiconductor ninganda zifotora.

Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.

Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!