SiC gutwikira / gushushanya Graphite substrate ya Semiconductor ，IgishushanyoIc Sic Graphiteepitaxy susceptors,
Carbone itanga suseptors, EPITAXY NA MOCVD, epitaxy susceptors, Igishushanyo, Abakiriya ba Wafer,

Ipfunyika ya CVD-SiC ifite ibiranga imiterere imwe, ibikoresho byegeranye, birwanya ubushyuhe bwinshi, irwanya okiside, isuku nyinshi, aside & alkali irwanya na reagent organic, ifite imiterere ihamye yumubiri na chimique.

Ugereranije nibikoresho bya grafite bifite isuku nyinshi, grafite itangira okiside kuri 400C, bizatera igihombo cyifu bitewe na okiside, bikaviramo kwanduza ibidukikije kubikoresho bya periferi hamwe nicyumba cya vacuum, kandi byongera umwanda wibidukikije bifite isuku nyinshi.

Nyamara, igifuniko cya SiC kirashobora kugumya gutuza kumubiri na chimique kuri dogere 1600, Irakoreshwa cyane mubikorwa bigezweho, cyane cyane munganda ziciriritse.

Isosiyete yacu itanga serivise zo gutunganya SiC hakoreshejwe uburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, gukora urwego rwo kurinda SIC. SIC yashizweho ihujwe cyane na base ya grafite, itanga igishushanyo cyihariye cya grafite, bityo bigatuma ubuso bwa grafite bwuzuzanya, Ubusa butagira ubukana, ubushyuhe bwo hejuru, kurwanya ruswa no kurwanya okiside.

Ibyingenzi byingenzi:

1. Kurwanya ubushyuhe bukabije bwa okiside:

kurwanya okiside iracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1700 C.

2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.

3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.

4. Kurwanya ruswa: aside, alkali, umunyu na reagent.

Ibyingenzi byingenzi bya CVD-SIC Coatings:

Ubushobozi bwo gutanga:

10000 Igice / Ibice buri kwezi
Gupakira & Gutanga:
Gupakira: Bisanzwe & Gupakira bikomeye
Umufuka wuzuye + Agasanduku + Ikarito + Pallet
Icyambu:
Ningbo / Shenzhen / Shanghai
Igihe cyo kuyobora: