SiC Coated Graphite Gear Impeta

Ibisobanuro bigufi:

VET Ingufu za SiC zishushanyijeho ibikoresho bya grafite ni ibicuruzwa bikora neza byashizweho kugirango bitange imikorere ihamye kandi yizewe mugihe kinini. Ifite ubushyuhe bwiza cyane hamwe nubushyuhe bwumuriro, ubuziranenge bwinshi, kurwanya isuri, bigatuma biba igisubizo cyiza kubisabwa gutunganya wafer.


  • Aho byaturutse:Ubushinwa
  • Imiterere ya Crystal:Icyiciro cya FCCβ
  • Ubucucike:3.21 g / cm;
  • Gukomera:2500 Vickers;
  • Ubuziranenge bwa Shimi:99,99995%;
  • Ubushobozi bwo gushyushya:640J · kg-1 · K-1;
  • Ubushyuhe bwa Sublimation:2700 ℃;
  • Ingano y'ibinyampeke:2 ~ 10 mm;
  • Imbaraga zidasanzwe:415 Mpa (RT 4-Ingingo);
  • Umusore Modulus:430 Gpa (4pt yunamye, 1300 ℃);
  • Kwagura Ubushyuhe (CTE):4.5 10-6K-1;
  • Amashanyarazi:300 (W / MK);
  • Ibicuruzwa birambuye

    Ibicuruzwa

    SiC Coated Graphite Gear Impeta nikintu cyingenzi gikoreshwa muburyo butandukanye bwo gukora igice cya kabiri. Twifashishije tekinoroji yacu yemewe kugirango dukore carbide ya silicon ifite isuku ryinshi cyane, uburinganire bwiza hamwe nubuzima bwiza bwa serivisi, hamwe n’imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.

    VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide hamwe nubuvuzi bwo hejuru nka SiC coating, TaC coating, carbone carbone ikirahure, pirolitike ya karubone, nibindi, birashobora gutanga ibice bitandukanye byabigenewe bya semiconductor ninganda zifotora.

    Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

    Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.

    Ibiranga ibicuruzwa byacu:

    1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700 ℃.
    2. Isuku ryinshi nuburinganire bwumuriro
    3. Kurwanya ruswa nziza: aside, alkali, umunyu na reagent.

    4. Gukomera cyane, hejuru yuzuye, ibice byiza.
    5. Kuramba kumurimo muremure kandi biramba

    CVD SiC薄膜基本物理性能

    Ibyingenzi bifatika bya CVD SiCgutwikira

    性质 / Umutungo

    典型数值 / Agaciro gasanzwe

    晶体结构 / Imiterere ya Crystal

    FCC β icyiciro多晶,主要为(111 )取向

    密度 Ubucucike

    3.21 g / cm³

    硬度 / Gukomera

    2500 维氏硬度( 500g umutwaro)

    晶粒大小 / Ibinyampeke SiZe

    2 ~ 10 mm

    纯度 / Ubuziranenge bwa Shimi

    99.99995%

    热容 / Ubushyuhe

    640 J · kg-1· K.-1

    升华温度 / Ubushyuhe bwo hejuru

    2700 ℃

    抗弯强度 / Imbaraga zoroshye

    415 MPa RT amanota 4

    杨氏模量 / Modulus

    430 Gpa 4pt yunamye, 1300 ℃

    导热系数 / ThermalImyitwarire

    300W · m-1· K.-1

    热膨胀系数 Kwagura Ubushyuhe (CTE)

    4.5 × 10-6K-1

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    Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!

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