Ongera usubiremo Silicon Carbide Ubwato bwa Crystal Ubwato bwa Semiconductor Inganda

Ibisobanuro bigufi:

VET Ingufu zongeye gushyirwaho Silicon Carbide Crystal Boat nigicuruzwa cyiza cyane cyagenewe gutanga imikorere ihamye kandi yizewe mugihe kinini.Ifite ubushyuhe bwiza cyane hamwe nubushyuhe bwumuriro, ubuziranenge bwinshi, kurwanya isuri, bigatuma biba igisubizo cyiza kubisabwa gutunganya wafer.


Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza bya karubide ya silicon yongeye gushyirwaho

Carbide ya silicon yongeye gushyirwaho (R-SiC) ni ibikoresho bikora cyane hamwe n'ubukomezi bwa kabiri nyuma ya diyama, ikorwa ku bushyuhe buri hejuru ya 2000 ℃.Igumana ibintu byinshi byiza bya SiC, nkimbaraga zubushyuhe bwo hejuru, kurwanya ruswa ikomeye, kurwanya okiside nziza, kurwanya ubushyuhe bwumuriro nibindi.

Properties Ibikoresho byiza bya mashini.Carbide yongeye gushyirwaho karbide ifite imbaraga nubukomezi kurenza fibre ya karubone, irwanya ingaruka nyinshi, irashobora gukina imikorere myiza mubushuhe bukabije, irashobora gukina imikorere iringaniza mubihe bitandukanye.Mubyongeyeho, ifite kandi ihinduka ryiza kandi ntabwo yangiritse byoroshye kurambura no kunama, bitezimbere cyane imikorere yayo.

Resist Kurwanya ruswa.Carbide ya silicon yongeye gushyirwaho ifite imbaraga nyinshi zo kurwanya ruswa yibitangazamakuru bitandukanye, irashobora gukumira isuri yibitangazamakuru bitandukanye byangirika, irashobora kugumana imiterere yubukanishi igihe kirekire, ifatanye cyane, kuburyo ifite ubuzima burebure.Mubyongeyeho, ifite kandi ituze ryiza ryumuriro, irashobora guhuza nurwego runaka rwimihindagurikire yubushyuhe, kunoza imikorere yayo.

Sin Sinteri ntigabanuka.Kuberako inzira yo gucumura itagabanuka, ntagahato gasigaye kazatera guhindagurika cyangwa gucika kubicuruzwa, kandi ibice bifite imiterere igoye kandi byuzuye birashobora gutegurwa.

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重 结晶 碳化硅 物理 特性

Ibintu bifatika bya Silicon Carbide yongeye gushyirwaho

性质 / Umutungo

典型 数值 / Agaciro gasanzwe

使用 温度/ Ubushyuhe bwo gukora (° C)

1600 ° C (hamwe na ogisijeni), 1700 ° C (kugabanya ibidukikije)

SiC含量/ Ibirimo

> 99,96%

自由Si 含量/ Ibirimo Si kubuntu

<0.1%

体积 密度/Ubucucike bwinshi

2.60-2.70 g / cm3

气孔 率/ Ikigaragara

<16%

抗压强度/ Imbaraga zo kwikuramo

> 600MPa

常温 抗弯 强度/Imbaraga zikonje

80-90 MPa (20 ° C)

高温 抗弯 强度Imbaraga zunamye

90-100 MPa (1400 ° C)

热 膨胀 系数/ Kwiyongera k'ubushyuhe @ 1500 ° C.

4.70 10-6/ ° C.

导热 系数/Ubushyuhe bwumuriro @ 1200 ° C.

23W / m • K.

杨氏 模 量/ Modulus

240 GPa

抗热 震 性/ Kurwanya inkuba

Nibyiza cyane

VET Ingufu nukuri gukora ibicuruzwa byabugenewe byabugenewe bya grafite na silicon karbide hamwe na CVD, birashobora gutanga ibice bitandukanye byabigenewe bya semiconductor ninganda zifotora.Itsinda ryacu rya tekinike rituruka mubigo byubushakashatsi bwo murugo, birashobora kuguha ibisubizo byumwuga kubwawe.

Dukomeje guteza imbere inzira ziterambere kugirango dutange ibikoresho byinshi byateye imbere, kandi twakoze tekinoroji yihariye yemewe, ishobora gutuma isano iri hagati yikingirizo na substrate ikomera kandi idakunda gutandukana.

Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!

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