SiC Coated Graphite Carriers, zokutira za sic, zokutira za SiC zokutira gawo lapansi la Graphite la Semiconductor

Silicon carbide yokutidwagraphite litayamba ndi kukonzekera pakachitsulo carbide zoteteza wosanjikiza pamwamba pa graphite ndi thupi kapena mankhwala mafunsidwe nthunzi ndi kupopera mbewu mankhwalawa. Wokonzeka silicon carbide zoteteza wosanjikiza akhoza zolimba womangidwa kwa masanjidwewo graphite, kupanga pamwamba pa graphite m'munsi wandiweyani ndi wopanda voids, kupereka graphite masanjidwewo katundu wapadera, kuphatikizapo makutidwe ndi okosijeni kukana, asidi ndi alkali kukana, kukokoloka kukana, kukana dzimbiri, etc. Pakali pano, ❖ kuyanika kwa Gan ndi chimodzi mwa zigawo zabwino kwambiri za kukula kwa epitaxial kwa silicon carbide.

Silicon carbide semiconductor ndiye maziko a semiconductor yomwe yangopangidwa kumene. Zipangizo zake zimakhala ndi mawonekedwe a kutentha kwambiri, kukana kwamagetsi, kuthamanga kwambiri, mphamvu zambiri komanso kukana kwa radiation. Lili ndi ubwino wachangu kusintha liwiro ndi mkulu dzuwa. Itha kuchepetsa kwambiri kugwiritsa ntchito mphamvu zamagetsi, kusintha mphamvu kutembenuka kwamphamvu ndikuchepetsa kuchuluka kwazinthu. Amagwiritsidwa ntchito makamaka pakulankhulana kwa 5g, chitetezo cha dziko ndi makampani ankhondo Malo a RF oimiridwa ndi zakuthambo ndi gawo lamagetsi lamagetsi loyimiridwa ndi magalimoto amagetsi atsopano komanso "zomangamanga zatsopano" ali ndi chiyembekezo chomveka bwino cha msika m'magulu ankhondo ndi ankhondo.

Silicon carbide substrate ndiye maziko a semiconductor yomwe yangopangidwa kumene. Silicon carbide gawo lapansi limagwiritsidwa ntchito makamaka mumagetsi a microwave, zamagetsi zamagetsi ndi magawo ena. Ili kumapeto kwa unyolo waukulu wa gap semiconductor industry ndipo ndi chodula komanso chofunikira kwambiri.Silicon carbide gawo lapansi lingagawidwe m'mitundu iwiri: theka insulating ndi conductive. Pakati pawo, theka insulating silicon carbide gawo lapansi ali ndi resistivity mkulu (resistivity ≥ 105 Ω· cm). Semi insulating gawo lapansi limodzi ndi heterogeneous gallium nitride epitaxial sheet angagwiritsidwe ntchito ngati zida za RF, zomwe zimagwiritsidwa ntchito makamaka muzoyankhulana za 5g, chitetezo cha dziko ndi makampani ankhondo pazomwe zili pamwambapa; Wina ndi conductive silicon carbide gawo lapansi lokhala ndi mphamvu yotsika (yosiyana ndi 15 ~ 30m Ω· cm). The homogeneous epitaxy ya conductive silicon carbide gawo lapansi ndi silicon carbide angagwiritsidwe ntchito ngati zipangizo zipangizo mphamvu. Zochitika zazikulu zogwiritsira ntchito ndi magalimoto amagetsi, machitidwe amagetsi ndi madera ena