SiC Coated

VET ENERGY, Wopanga wamkulu wa CVD SIC zokutira ku China

Zipangizo Zimasintha Tsogolo

Silicon carbide (SiC) ndi chinthu chatsopano cha semiconductor. Silicon carbide ili ndi kusiyana kwakukulu kwa bandi (pafupifupi silicon nthawi 3), mphamvu yayikulu yofunikira kwambiri (pafupifupi silicon nthawi 10), kutenthetsa kwambiri kwamafuta (pafupifupi silicon nthawi 3). Ndikofunikira kwambiri m'badwo wotsatira wa semiconductor. Zovala za SiC zimagwiritsidwa ntchito kwambiri mumakampani a semiconductor ndi ma photovoltaics a dzuwa. Makamaka, ma susceptors omwe amagwiritsidwa ntchito pakukula kwa epitaxial kwa ma LED ndi Si single crystal epitaxy amafuna kugwiritsa ntchito zokutira za SiC. Chifukwa chakukwera kwamphamvu kwa ma LED pamakampani owunikira ndikuwonetsa, komanso kukula kwamphamvu kwamakampani opanga ma semiconductor,SiC coating mankhwalaziyembekezo ndi zabwino kwambiri.

APPLICATION FIELD

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Kugwiritsa ntchito ndi magwiridwe antchito                                                                                               Zogulitsa ndi kugwiritsa ntchito

Si single crystal industry, GaN, AlN, safire ndi zina za MOCVD. - Graphite maziko zokutira kwa single crystal silicon epitaxial kukula

Ntchito yayikulu: kuyera kwakukulu, kukana kukokoloka, kukhathamiritsa kwamafuta apamwamba, - Njira ya MOCVD, zokutira zoyambira za graphite za kukula kwa GaN epitaxial

kutentha kwambiri kukana, kutsika kwamafuta owonjezera kowonjezera.

 

Makampani a Semiconductor
Makampani a Semiconductor
Makampani a Semiconductor
Solar photovoltaic

 

Thermal Conductivity 250 W/m °K Njira ya laser flash, RT
Kukula kwa Thermal (CTE) 4.5 x 10-6°K Kutentha kwachipinda mpaka 950 ° C, silika dilatometer
       Katundu Mtengo Njira
Kuchulukana 3.21g/cc Sink-float ndi dimension
Kutentha kwenikweni 0.66 J/g °K Kuwala kwa laser pulsed
Flexural mphamvu 450 MPa 560 MPa 4 point bend, RT4 point bend, 1300°
Kulimba kwa fracture 2.94 MPa m1/2 Microindentation
Kuuma 2800 Vicker, 500g katundu
Elastic ModulusYoung's Modulus 450 GPA430 GPA 4 pt bend, RT4 pt bend, 1300 °C
Kukula kwambewu 2 - 10 μm Mtengo wa SEM

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Purity, SEM Kapangidwe, makulidwe kusanthula kwaKupaka kwa SiC

Kuyera kwa zokutira za SiC pa graphite pogwiritsa ntchito CVD ndizokwera kwambiri mpaka 99.9995%. Mapangidwe ake ndi fcc. Mafilimu a SiC omwe amaikidwa pa graphite ndi (111) akuyang'ana monga momwe asonyezedwera mu deta ya XRD (Fig.1) yosonyeza khalidwe lake lapamwamba la crystalline. Makulidwe a filimu ya SiC ndi yofanana kwambiri monga momwe tawonetsera mkuyu.

Zambiri za SEM za filimu yopyapyala ya CVD SiC, kukula kwa kristalo ndi 2 ~ 1 Opm

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Chithunzi 2: makulidwe yunifolomu ya mafilimu a SiC

Kapangidwe ka kristalo ka filimu ya CVD SiC ndi mawonekedwe a nkhope ya cubic, ndipo mawonekedwe akukula kwa filimu ali pafupi ndi 100%

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SEM ndi XRD ya kanema wa beta-SiC pa graphite

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SINGLE CRYSTAL SILICON EPITAXIAL BASE

Zochita zamalonda ndi chiyembekezo chogwiritsa ntchito.

Silicon carbide (SiC) yokutidwamaziko ndiye maziko abwino kwambiri a silicon imodzi ya crystal ndi GaN epitaxy, yomwe ndi gawo lalikulu la ng'anjo ya epitaxy. Pansi pake ndi chofunikira chopangira silicon ya monocrystalline pamabwalo akulu ophatikizika. Ili ndi kuyera kwakukulu, kukana kutentha kwambiri, kukana kwa dzimbiri, kulimba kwa mpweya wabwino ndi zina zabwino zakuthupi.

Kugwiritsidwa ntchito ndi mankhwala

Graphite m'munsi zokutira kwa crystal silicon epitaxial kukula Oyenera makina a Aixtron, etc. Kupaka makulidwe: 90 ~ 150um M'mimba mwake mwa chigwa chophwanyika ndi 55mm.

Chithunzi cha SOLAR PHOTOVOLTAIC

GAupidpelitcubaetiaonnd

graphite crucible zokutirakwa silicon imodzi ya crystal mwa njira yowongoka

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single crystal silicon mafakitale kupanga ndi njira yowongoka kukoka,crucible katatumonga kutentha kwapamwamba komanso mbali zowongolera kutentha, chubu chotuluka ngati mpweya wotulutsa mpweya wotulutsa mpweya wotulutsa mpweya, chubu chotuluka ngati njira yotulutsa mpweya.
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Zogulitsa
Kukana kutentha kwapamwamba, kukana kwa dzimbiri, moyo wautali wautumiki, kumatha kupititsa patsogolo mtundu ndi kutulutsa kwa chowotcha. Ndi coefficient yotsika kwambiri yowonjezera kutentha, kukana kutentha kwakukulu, kukana kuvala kwapamwamba, kutsekemera kwabwino, kukhazikika kwa mankhwala, pafupi ndi wofiirira (wofiira) kunja kwa kuwala kowonekera.
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Bwanji kusankha ife

Zida zamakono ndi gulu

Class 1000 yopanda fumbi

*opitilira 3000 masikweya mita a 1000 kalasi yopanda fumbi

*Gulu la Cooperative R & D la Chinese Academy of Sciences

*Zida zapadera zopangira ndi kuyezetsa molondola

*Mphamvu zokwanira komanso zapamwamba zopangira86b0afaa78106ff600d26e97300491b

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Tsatanetsatane wapaketi

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Ningbo VET Energy Technology Co., Ltd ndi katswiri wopanga magawo a graphite, makamaka popanga zida zatsopano za semiconductor ndikuyang'ana pa kafukufuku ndi chitukuko cha zokutira za SiC. Zogulitsa zazikuluzikulu za kampaniyi ndi zoyatsira zokutira za SiC zamakampani a LED ndi makampani a silicon monocrystalline. Kanema wa SiC womwe umagwiritsidwa ntchito pamakampani a LED ndi mafakitale a silicon monocrystalline ndi gawo la cubic, lomwe lili ndi mawonekedwe a lattice omwewo ngati diamondi, ndipo kulimba kwake kumangofanana ndi diamondi. Silicon carbide ndiye chida chokhwima kwambiri cha band gap semiconductor, ndipo chili ndi chiyembekezo chogwiritsa ntchito pamakampani opanga ma semiconductor. Kuphatikiza apo, silicon carbide imakhala ndi matenthedwe apamwamba kwambiri, kagawo kakang'ono kakuwonjezera kutentha, kukana kutentha kwambiri (pafupifupi 2700 digiri Celsius), komanso kukana kwa dzimbiri. Zopangira zokutira za silicon carbide za kampaniyi zimagwiritsidwanso ntchito kwambiri muzamlengalenga, mafakitale a photovoltaic, mphamvu zanyukiliya, njanji zothamanga kwambiri, zamagalimoto ndi mafakitale ena.

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