Pii carbide pressum sintered (SSIC)fit utens tenuissimo SiC pulvere additivo continens. Discursum est utens modos formandi typicos pro aliis ceramicis et sinteratis ad 2,000 ad 2,200° C in atmosphaera gasi iners. Sicut versiones subtilissimae, cum magnitudinum frumenti <5 um, versiones grossae grani cum magnitudinibus frumenti usque ad 1.5. mm in promptu sunt.
SSIC viribus altis distinguitur quae fere constantes usque ad altissimas temperaturas (circiter 1,600° C) distinguitur, sustinens illam vires per longa tempora!
Commoda product:
Princeps caliditas oxidationis resistentia
Corrosion resistentia praeclara
Bonum Abrasionis resistentia
Princeps coefficiens caloris conductivity
Levitas, humilis densitas
Alta duritia
Lorem amet.
Proprietates technicae:
| Items | Unitas | Data |
| duritia | HS | ≥110 |
| Porosity Rate | % | <0.3 |
| Density | g/cm3 | 3.10-3.15 |
| Compressive | MPa | >2200 |
| Fortitudo fractura | MPa | >350 |
| Coefficiens expansion | 10/°C | 4.0 |
| Contentus Sic | % | ≥99 |
| Scelerisque conductivity | W/mk | >120 |
| Modulus elasticus | GPa | ≥400 |
| Temperature | °C | 1380 |
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