Pii carbide pressum sintered (SSIC)fit utens tenuissimo SiC pulvere additivo continens. Discursum est utens modos formandi typicos pro aliis ceramicis et sinteratis ad 2,000 ad 2,200° C in atmosphaera gasi iners. Sicut versiones subtilissimae, cum magnitudinum frumenti <5 um, versiones grossae grani cum magnitudinibus frumenti usque ad 1.5. mm in promptu sunt.
SSIC distinguitur viribus altis, quae fere constantes usque ad altissimas temperaturas (circiter 1,600° C), distinguitur, sustinens illam vires per longa tempora!
Commoda product:
Princeps caliditas oxidationis resistentia
Corrosion resistentia praeclara
Bonum Abrasionis resistentia
Princeps coefficiens caloris conductivity
Levitas, humilis densitas
Alta duritia
Lorem amet.
Proprietates technicae:
| Items | Unitas | Data |
| duritia | HS | ≥110 |
| Porosity Rate | % | <0.3 |
| Density | g/cm3 | 3.10-3.15 |
| Compressive | MPa | >2200 |
| Fortitudo fractura | MPa | >350 |
| Coefficiens expansion | 10/°C | 4.0 |
| Contentus Sic | % | ≥99 |
| Scelerisque conductivity | W/mk | >120 |
| Modulus elasticus | GPa | ≥400 |
| Temperature | °C | 1380 |
-
Sina Factory pro Sinis Sintered Silicon Carbid...
-
CVD SiC Coated Carbon-carbon Compositum CFC Navi...
-
CVD sic coating cc virga composita, carbi pii...
-
Mechanica Carbon Graphite Bush Annuli, Silicone...
-
Refractory Ceramic Bonded Silicon Carbide Sic C...
-
Pii Carbide Coated Graphite Substratum pro S...
-
carbidi carbonis carbonis pii compositi atro-.
-
CVD Silicon Carbide Coating MOCVD Susceptor
-
pii carbide fusorium pro fuso ferreo ...
-
Silicon Carbide Sic Graphite Crucible for Melti...
-
Silicon Carbide SiC Graphite Crucible, Ceramic ...
-
Silicone carbide sic anulus 3mm silicone anulus
-
Duplex anulus graphite fusilis ad conflaturam metalli...