Silicon Carbide (SiC) Epitaxial Wafer

Nkọwa dị mkpirikpi:

Silicon Carbide (SiC) Epitaxial Wafer sitere na VET Energy bụ mkpụrụ na-arụ ọrụ dị elu emebere iji gboo ihe achọrọ nke ike ọgbọ na-abịa na ngwaọrụ RF. VET Energy na-ahụ na a na-emepụta wafer epitaxial nke ọ bụla nke ọma iji nye ọkụ eletrik dị elu, voltaji na-emebi emebi, na njem ụgbọ ala, na-eme ka ọ dị mma maka ngwa dị ka ụgbọ ala eletrik, nkwurịta okwu 5G, na ngwá electronic dị elu.


Nkọwa ngwaahịa

Mkpado ngwaahịa

VET Energy silicon carbide (SiC) epitaxial wafer bụ ihe na-arụ ọrụ obosara bandgap semiconductor ihe nwere oke nguzogide okpomọkụ dị elu, ugboro dị elu na njirimara ike dị elu. Ọ bụ ezigbo mkpụrụ maka ọgbọ ọhụrụ nke ngwaọrụ eletrọnịkị ike. VET Energy na-eji teknụzụ epitaxial MOCVD dị elu na-eto eto SiC epitaxial layers na mkpụrụ SiC, na-ahụ na arụmọrụ dị mma na nkwụsi ike nke wafer.

Silicon Carbide (SiC) Epitaxial Wafer na-enye ezigbo ndakọrịta yana ọtụtụ ihe semiconductor gụnyere Si Wafer, SiC Substrate, SOI Wafer, na SiN Substrate. Site na oyi akwa epitaxial ya siri ike, ọ na-akwado usoro dị elu dị ka uto Epi Wafer na ntinye ya na ihe ndị dị ka Gallium Oxide Ga2O3 na AlN Wafer, na-eme ka ojiji dị iche iche na teknụzụ dị iche iche. Ezubere ka ọ dakọtara na sistemụ njikwa Cassette ọkọlọtọ nke ụlọ ọrụ, ọ na-eme ka arụ ọrụ dị mma na nke dabara adaba na gburugburu nrụpụta semiconductor.

Ahịrị ngwaahịa VET Energy ejedebeghị na wafers SiC epitaxial. Anyị na-enyekwa ihe dị iche iche nke semiconductor ihe, gụnyere Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, wdg. Na mgbakwunye, anyị na-arụsi ọrụ ike na-emepụta ihe ọhụrụ bandgap semiconductor, dị ka Gallium Oxide Ga2O3 na AlN. Wafer, iji gboo mkpa ụlọ ọrụ eletrọnịkị ike n'ọdịnihu maka ngwaọrụ arụmọrụ dị elu.

6页-36
6页-35

Nkọwapụta WAFERING

*n-Pm=n-ụdị Pm-Grade,n-Ps=n-ụdị Ps-Grade,Sl=Ọkara-lnsulating

Ihe

8-anụ ọhịa

6-anụ ọhịa

4-anụ ọhịa

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Ụta(GF3YFCD)-Uru zuru oke

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV (SBIR) -10mmx10mm

<2μm

Wafer Edge

Beveling

IMEcha elu ala

*n-Pm=n-ụdị Pm-Grade,n-Ps=n-ụdị Ps-Grade,Sl=Ọkara-lnsulating

Ihe

8-anụ ọhịa

6-anụ ọhịa

4-anụ ọhịa

nP

n-Pm

n-Ps

SI

SI

Emecha elu elu

Akụkụ abụọ Optical Polish, Si- Face CMP

Ọdịdị elu

(10um x 10um) Si-FaceRa≤0.2nm
C-Ihu Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Ihu Ra≤0.5nm

ibe ibe

Ọnweghị nke ekwenyere (ogologo na obosara≥0.5mm)

Indents

Ọnweghị nke ekwenyere

Scratches (Si-Ihu)

Qty.≤5,Nchịkọta
Ogologo≤0.5 × dayameta wafer

Qty.≤5,Nchịkọta
Ogologo≤0.5 × dayameta wafer

Qty.≤5,Nchịkọta
Ogologo≤0.5 × dayameta wafer

Mgbawa

Ọnweghị nke ekwenyere

Mwepu ihu

3mm

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