Sussetpor mkpuchi SiC bụ isi akụrụngwa eji na usoro nrụpụta semiconductor dị iche iche. Anyị na-eji teknụzụ anyị nwere ikike ime Suscetpor mkpuchi SiC nwere ịdị ọcha dị oke mma, mkpuchi mkpuchi dị mma yana ndụ ọrụ magburu onwe ya, yana nnukwu nguzogide kemịkalụ na nkwụsi ike ọkụ.
Atụmatụ ngwaahịa anyị:
1. High okpomọkụ ọxịdashọn eguzogide ruo 1700 ℃.
2. High ịdị ọcha na thermal uniformity
3. Magburu onwe corrosion eguzogide: acid, alkali, nnu na organic reagents.
4. Elu ike, kọmpat elu, ezigbo ahụ.
5. Ogologo ndụ ọrụ na ihe na-adịgide adịgide
| CVD SiC薄膜基本物理性能 Njirimara anụ ahụ bụ isi nke CVD SiCmkpuchi | |
| 性质 / Ihe onwunwe | 典型数值 / Uru a na-ahụkarị |
| 晶体结构 / Crystal Structure | FCC β oge多晶，主要为（111) ndị a |
| 密度 / Njupụta | 3.21g/cm³ |
| 硬度 / Isi ike | 2500 维氏硬度 (ibu 500g) |
| 晶粒大小 / ọka SiZe | 2 ~ 10μm |
| 纯度 / Chemical ịdị ọcha | 99.99995% |
| 热容 / Okpomọkụ Ike | 640 nk-1· K-1 |
| 升华温度 / Sublimation okpomọkụ | 2700 ℃ |
| 抗弯强度 / Ike Flexural | 415 MPa RT 4-isi |
| 杨氏模量 Modul nke ntorobịa | 430 Gpa 4pt ekwe, 1300 ℃ |
| 导热系数 / ThermalOmume omume | 300W·m-1· K-1 |
| 热膨胀系数 / Mgbasa ọkụ (CTE) | 4.5 × 10-6K-1 |
Ji obi ụtọ nabata gị ileta ụlọ ọrụ anyị, ka anyị nwee mkparịta ụka ọzọ!
