Ndị na-ebu ihe eserese nke SiC, mkpuchi sic, mkpuchi SiC nke ejiri mkpụrụ graphite kpuchie maka Semiconductor

Silicon carbide kpuchiegraphite diski bụ ịkwadebe oyi akwa mkpuchi silicon carbide n'elu graphite site na nsị anụ ahụ ma ọ bụ kemịkalụ na ịgbasa. Ihe mkpuchi mkpuchi silicon carbide a kwadebere nwere ike jikọta ya na matrix graphite, na-eme ka elu nke graphite dị oke ma nwee oghere, na-enye matriks graphite ihe pụrụ iche, gụnyere nguzogide oxidation, acid na alkali resistance, iguzogide mbuze, nguzogide corrosion, wdg Ugbu a, mkpuchi Gan bụ otu n'ime ihe kachasị mma maka uto epitaxial nke silicon carbide.

Silicon carbide semiconductor bụ ihe bụ isi ihe nke semiconductor wide band gap ọhụrụ mepere emepe. Ngwaọrụ ya nwere njirimara nke nguzogide okpomọkụ dị elu, oke voltaji na-eguzogide, ugboro ugboro, ike dị elu na nguzogide radieshon. Ọ nwere uru nke ngwa ngwa ngbanwe ọsọ na arụmọrụ dị elu. Ọ nwere ike belata oriri ike ngwaahịa nke ukwuu, melite arụmọrụ ntụgharị ike ma belata olu ngwaahịa. A na-ejikarị ya na nkwurịta okwu 5g, nchekwa mba na ụlọ ọrụ ndị agha Mpaghara RF nke aerospace na ike eletrik na-anọchi anya ụgbọ ala ike ọhụrụ na "ihe ọhụrụ" nwere atụmanya ahịa doro anya ma buru ibu na mpaghara obodo na ndị agha.

Mkpụrụ silicon carbide bụ isi ihe nke semiconductor wide band gap nke emepụtara ọhụrụ. A na-ejikarị mkpụrụ osisi silicon carbide na ngwa elektrọnik, ngwa eletrọnịkị na mpaghara ndị ọzọ. Ọ bụ na n'ihu ọgwụgwụ nke obosara gbalaga ọdịiche semiconductor ụlọ ọrụ yinye na bụ ọnwụ-ọnụ na isi isi ihe material.Silicon carbide mkpụrụ nwere ike kewara abụọ ụdị: ọkara mkpuchi na conductive. N'ime ha, ọkara mkpuchi silicon carbide mkpụrụ nwere nnukwu resistivity (resistivity ≥ 105 Ω · cm). Enwere ike iji mkpụrụ ihe mkpuchi nke ọkara jikọtara ya na gallium nitride epitaxial heterogeneous dị ka ihe eji arụ ọrụ RF, nke a na-ejikarị na nzikọrịta ozi 5g, nchekwa mba na ụlọ ọrụ ndị agha na mpaghara ndị a; Nke ọzọ bụ ihe na-eduzi silicon carbide mkpụrụ nwere obere resistivity (oke resistivity bụ 15 ~ 30m Ω · cm). Enwere ike iji epitaxy na-arụkọ ọrụ nke silicon carbide substrate na silicon carbide dị ka ihe maka ngwaọrụ ike. Ihe ngosi ngwa bụ isi bụ ụgbọ ala eletrik, sistemu ike na mpaghara ndị ọzọ