Silicon carbide (SiC) bụ ihe mejupụtara semiconductor ọhụrụ. Silicon carbide nwere nnukwu ọdịiche nke band (ihe dị ka silicon ugboro 3), ike ubi dị oke egwu (ihe dị ka 10 ugboro silicon), conductivity nke thermal dị elu (ihe dị ka 3 ugboro silicon). Ọ bụ ihe dị mkpa na-esote ọgbọ semiconductor. A na-eji mkpuchi SiC eme ihe n'ọtụtụ ebe na ụlọ ọrụ semiconductor na fotovoltaics nke anyanwụ. Karịsịa, ndị susceptors eji na epitaxial uto nke LEDs na Si single crystal epitaxy chọrọ iji mkpuchi SiC. N'ihi ọnọdụ elu dị elu nke LEDs na ụlọ ọrụ ọkụ na ngosipụta, yana mmepe siri ike nke ụlọ ọrụ semiconductor,Ngwaahịa mkpuchi SiCatụmanya dị ezigbo mma.
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Ịdị ọcha, SEM Structure, ọkpụrụkpụ nyocha nkeMkpuchi SiC
Ịdị ọcha nke mkpuchi SiC na graphite site na iji CVD dị elu dị ka 99.9995%. Ọdịdị ya bụ fcc. Ihe nkiri SiC na-ekpuchi na graphite bụ (111) dabere dị ka egosiri na data XRD (Fig.1) na-egosi ogo kristal dị elu. Ọkpụrụkpụ nke ihe nkiri SiC bụ otu dị ka egosiri na Fig. 2.
Foto 2: akwa uwe nke ihe nkiri SiC SEM na XRD nke ihe nkiri beta-SiC na graphite
Data SEM nke ihe nkiri CVD SiC dị mkpa, nha kristal bụ 2 ~ 1 opm
Ọdịdị kristal nke ihe nkiri CVD SiC bụ usoro cubic gbadoro ụkwụ na ihu, na ntụzịaka uto ihe nkiri dị nso 100%
Silicon carbide (SiC) kpuchientọala bụ ntọala kacha mma maka otu silicon kristal na GaN epitaxy, nke bụ isi ihe dị na ọkụ epitaxy. Isi ihe bụ ngwa mmepụta ihe maka silicon monocrystalline maka nnukwu sekit agbakwunyere. Ọ nwere ịdị ọcha dị elu, nguzogide okpomọkụ dị elu, nguzogide corrosion, ikuku ikuku dị mma na njirimara ihe ndị ọzọ magburu onwe ya.
Ngwa ngwaahịa na ojiji
Ihe mkpuchi graphite maka otu kristal silicon epitaxial growth dabara maka igwe Aixtron, wdg mkpuchi mkpuchi: 90 ~ 150umThe dayameta nke oghere wafer bụ 55mm.
Oge nzipu: Mar-14-2022