Silicon carbide tray na-ebuis a igodoakụrụngwa eji dị iche iche semiconductor n'ichepụta usoro.Anyị na-eji teknụzụ anyị nwere ikike iji mee ka ụgbọ ala silicon carbideoke ịdị ọcha,nke ọmamkpuchiịdị n'otuna ndụ ọrụ magburu onwe ya, yanaelu chemical iguzogide na thermal kwụsie ike Njirimara.
VET Energy bụ nkeezigbo onye na-emepụta ngwaahịa graphite na silicon carbide nwere mkpuchi CVD,nwere ike inyedị iche icheakụkụ ahaziri maka semiconductor na fotovoltaic ụlọ ọrụ. Our teknuzu otu si n'elu ụlọ nnyocha ụlọ ọrụ, nwere ike na-enye ndị ọzọ ọkachamara ihe ngwọtamaka gị.
Anyị na-aga n'ihu na-emepụta usoro dị elu iji nye ihe ndị dị elu karị,naarụpụtala nkà na ụzụ nwere ikike pụrụ iche, nke nwere ike ime ka njikọ dị n'etiti mkpuchi na mkpụrụ ahụ sie ike ma ghara ịdị na-apụ apụ.
Fnri nke ngwaahịa anyị:
1. High okpomọkụ oxidation iguzogide ruo 1700℃.
2. Akwa ịdị ọcha nathermal uniformity
3. Magburu onwe corrosion eguzogide: acid, alkali, nnu na organic reagents.
4. Elu ike, kọmpat elu, ezigbo ahụ.
5. Ogologo ndụ ọrụ na ihe na-adịgide adịgide
| CVD SiC薄膜基本物理性能 Njirimara anụ ahụ bụ isi nke CVD SiCmkpuchi | |
| 性质 / Ihe onwunwe | 典型数值 / Uru a na-ahụkarị |
| 晶体结构 / Crystal Structure | FCC β oge多晶，主要为（111) ndị a |
| 密度 / Njupụta | 3.21g/cm³ |
| 硬度 / Isi ike | 2500 维氏硬度 (ibu 500g) |
| 晶粒大小 / ọka SiZe | 2 ~ 10μm |
| 纯度 / Chemical ịdị ọcha | 99.99995% |
| 热容 / Okpomọkụ Ike | 640 nk-1· K-1 |
| 升华温度 / Sublimation okpomọkụ | 2700 ℃ |
| 抗弯强度 / Ike Flexural | 415 MPa RT 4-isi |
| 杨氏模量 Modul nke ntorobịa | 430 Gpa 4pt ekwe, 1300 ℃ |
| 导热系数 / ThermalOmume omume | 300W·m-1· K-1 |
| 热膨胀系数 / Mgbasa ọkụ (CTE) | 4.5 × 10-6K-1 |
Ji obi ụtọ nabata gị ileta ụlọ ọrụ anyị, ka anyị nwee mkparịta ụka ọzọ!
