Nke Di eluSiC Cantilever Paddlemaka nhazi Wafer nke vet-china mepụtara na-enye ezigbo ngwọta maka nrụpụta semiconductor. A na-eji ihe SiC (silicon carbide) mee paddle a cantilever, na ike ya dị elu na nguzogide okpomọkụ na-enyere ya aka ịnọgide na-arụ ọrụ dị mma na okpomọkụ dị elu na gburugburu ebe na-emebi emebi. Nhazi nke Cantilever Paddle na-enye ohere ka a kwadoro wafer n'oge nhazi, na-ebelata ihe ize ndụ nke nkewa na mmebi.
SiC Cantilever Paddlebụ ihe pụrụ iche nke eji eme ihe na ihe nrụpụta semiconductor dị ka ọkụ oxidation, ọkụ na-ekesa, na ọkụ na-ekpo ọkụ, ihe bụ isi bụ maka nbudata na nbudata, na-akwado ma na-ebufe wafers n'oge usoro okpomọkụ dị elu.
Ọdịdị nkịtịnkeSiCcantileverpaddle: ihe owuwu cantilever, nke edobere n'otu nsọtụ yana n'efu n'akụkụ nke ọzọ, na-enwekarị atụmatụ dị larịị na paddle.
VET Energy na-eji ihe silicon carbide recrystallized dị ọcha dị elu na-ekwe nkwa ịdịmma ya.
| Njirimara anụ ahụ nke Silicon Carbide recrystallized | |
| Ngwongwo | Uru a na-ahụkarị |
| Okpomọkụ na-arụ ọrụ (°C) | 1600C (ya na oxygen), 1700C (mbelata gburugburu ebe obibi) |
| Ọdịnaya SiC | > 99.96% |
| Ọdịnaya Si efu | <0.1% |
| Nnukwu njupụta | 2.60-2.70 g / cm3 |
| Porosity pụtara | <16% |
| Ike mkpakọ | > 600MPa |
| Ike na-ehulata oyi | 80-90 MPa (20°C) |
| Ike na-ehulata ọkụ | 90-100 MPa (1400°C) |
| Mgbasa ọkụ @1500°C | 4,70 10-6/°C |
| Nrụpụta okpomọkụ @1200°C | 23W/m•K |
| Modulu nke na-agbanwe agbanwe | 240 GPA |
| Mgbochi ujo okpomọkụ | Dị oke mma |
Uru nke VET Energy's Advanced SiC Cantilever Paddle for Wafer Processing bụ:
-Elu okpomọkụ kwụsie ike: eji na gburugburu 1600 ° C;
- Ọnụ ọgụgụ mgbasawanye nke obere okpomọkụ: na-ejigide nkwụsi ike akụkụ, na-ebelata ihe egwu wafer warpage;
-Elu ịdị ọcha: obere ihe ize ndụ nke mmetọ ígwè;
-Chemical inertness: corrosion-eguzogide, adabara dị iche iche gas gburugburu;
-Elu ike na ike: eyi na-eguzogide ọgwụ, ogologo ndụ ọrụ;
-Good thermal conductivity: enyere na edo wafer kpo oku.
