Onye nrụpụta China SiC mkpuchi graphite MOCVD Epitaxy Susceptor

Nkọwa dị mkpirikpi:

Ịdị ọcha <5ppm
‣ Ezigbo doping uniformity
‣ Nnukwu njupụta na adhesion
‣ Ezigbo mgbochi corrosive na mgbochi carbon

‣ Nhazi ọkachamara
‣ Obere oge na-eduga
‣ ọkọnọ kwụsiri ike
‣ Njikwa ogo na nkwalite na-aga n'ihu

Epitaxy nke GaN na Sapphire(RGB / Obere / Micro LED);
Epitaxy nke GaN na Si Substrate(UVC);
Epitaxy nke GaN na Si Substrate(Ngwaọrụ eletrọnịkị);
Epitaxy nke Si na mkpụrụ Si(Sekit jikọtara ọnụ);
Epitoxy nke SiC na mkpụrụ osisi SiC(Mkpụrụ osisi);
Epitoxy nke InP na InP

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Nkọwa ngwaahịa

Mkpado ngwaahịa

MOCVD Susceptor dị elu Zụrụ online na China

Wafer kwesịrị ịgafe ọtụtụ usoro tupu ọ dị njikere maka ojiji na ngwaọrụ eletrọnịkị. Otu usoro dị mkpa bụ silicon epitaxy, nke a na-ebu wafers na graphite susceptors. Ngwongwo na ịdị mma nke ndị na-eche nche nwere mmetụta dị oke mkpa n'ịdị mma nke oyi akwa epitaxial wafer.

Maka usoro ntinye ihe nkiri dị mkpa dị ka epitaxy ma ọ bụ MOCVD, VET na-enye ngwa ngwa graphitee dị ọcha nke a na-eji na-akwado mkpụrụ ma ọ bụ "wafers". Na isi nke usoro a, a na-ebu ụzọ tinye akụrụngwa a, susceptors epitaxy ma ọ bụ nyiwe satịlaịtị maka MOCVD.

Okpomọkụ dị elu.
Nnukwu agụụ.
Ojiji nke gaseous precursors na-eme ihe ike.
Mmetọ efu, enweghị peeling.
Iguzogide acid siri ike n'oge arụ ọrụ nhicha

VET Energy bụ ezigbo onye nrụpụta nke ngwaahịa graphite ahaziri iche na silicon carbide nwere mkpuchi maka semiconductor na ụlọ ọrụ fotovoltaic. Anyị ọrụ otu si n'elu ụlọ nnyocha ụlọ ọrụ, nwere ike na-enye ndị ọzọ ọkachamara ihe ngwọta maka gị.

Anyị na-aga n'ihu na-emepụta usoro dị elu iji nye ihe ndị dị elu karị, ma rụọ ọrụ nkà na ụzụ pụrụ iche, nke nwere ike ime ka njikọ dị n'etiti mkpuchi na mkpụrụ ahụ sie ike ma ghara ịdị na-apụ apụ.

Atụmatụ ngwaahịa anyị:

1. High okpomọkụ ọxịdashọn eguzogide ruo 1700 ℃.
2. High ịdị ọcha na thermal uniformity
3. Magburu onwe corrosion eguzogide: acid, alkali, nnu na organic reagents.
4. Elu ike, kọmpat elu, ezigbo ahụ.
5. Ogologo ndụ ọrụ na ihe na-adịgide adịgide

CVD SiC薄膜基本物理性能 Njirimara anụ ahụ bụ isi nke CVD SiCmkpuchi
性质 / Ihe onwunwe	典型数值 / Uru a na-ahụkarị
晶体结构 / Crystal Structure	FCC β oge多晶，主要为（111) 取向
密度 / Njupụta	3.21g/cm³
硬度 / Isi ike	2500 维氏硬度 (ibu 500g)
晶粒大小 / ọka SiZe	2 ~ 10μm
纯度 / Chemical ịdị ọcha	99.99995%
热容 / Okpomọkụ Ike	640 nk^-1· K^-1
升华温度 / Sublimation okpomọkụ	2700 ℃
抗弯强度 / Ike Flexural	415 MPa RT 4-isi
杨氏模量 Modul nke Young's	430 Gpa 4pt ekwe, 1300 ℃
导热系数 / ThermalOmume omume	300W·m^-1· K^-1
热膨胀系数 Mgbasawanye okpomọkụ (CTE)	4.5 × 10^-6K^-1