Silicon-based GaN Epitaxy

Lus piav qhia luv luv:

Qhov Chaw Keeb Kwm:Tuam Tshoj

Crystal Structure:FCCβ theem

Ceev:3.21 g / cm3

Hardness:2500 Vickers

Loj Loj:2 ~ 10 hli

Tshuaj Purity:99.99995%

Thaum tshav kub kub muaj peev xwm:640J·kg-1·K-1

Sublimation kub:2700 ℃

Felexural zog:415 Mpa (RT 4-Point)

Young's Modulus:430 Gpa (4pt khoov, 1300 ℃)

Thermal Expansion (CTE):4.5 10-6K-1

Thermal conductivity:300 (W / mK)

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Product Detail

Khoom cim npe

Product Description

Peb lub tuam txhab muab SiC txheej txheej txheem kev pabcuam los ntawm CVD txoj hauv kev ntawm graphite, ceramics thiab lwm yam ntaub ntawv, kom cov pa roj tshwj xeeb uas muaj cov pa roj carbon thiab silicon hnov mob ntawm qhov kub kom tau txais siab purity SiC molecules, molecules tso rau saum npoo ntawm cov ntaub ntawv coated, tsim SIC tiv thaiv txheej.

Cov yam ntxwv tseem ceeb:

1. Kub kub oxidation tsis kam:

oxidation kuj tseem zoo heev thaum kub siab li 1600 C.

2. High purity: ua los ntawm cov tshuaj vapor deposition nyob rau hauv siab kub chlorination mob.

3. Erosion kuj: siab hardness, compact nto, zoo hais.

4. Corrosion kuj: acid, alkali, ntsev thiab organic reagents.

Main Specifications ntawm CVD-SIC txheej

SiC-CVD Properties
Crystal Structure	FCC β theem
Qhov ntom	g / cm³	3.21
Hardness	Vickers hardness	2500
Loj Loj	ib m	2 ~ 10
Tshuaj Purity	%	99.999 5
Thaum tshav kub kub muaj peev xwm	J·kg-1 · K-1	640
Sublimation kub	℃	2700 ib
Felexural zog	MPa (RT 4-point)	415
Young's Modulus	Gpa (4pt khoov, 1300 ℃)	430
Thermal Expansion (CTE)	10-6K-1	4.5
Thermal conductivity	(W / mK)	300