SiC Txheej / Coated Graphite Substrate / Tais rau Semiconductor

Lus piav qhia luv luv:

VET Energy SiC Coated Graphite Susceptor rau Epitaxial Growth yog cov khoom lag luam ua tau zoo tsim los muab kev ua tau zoo thiab txhim khu kev qha nyob rau lub sijhawm ntev. Nws muaj super zoo kub tsis kam thiab thermal uniformity, siab purity, yaig kuj, ua rau nws zoo meej tov rau wafer ua daim ntaub ntawv.


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Khoom cim npe

SiC txheej / coated ntawm Graphite susceptor rau Semiconductor
 
CovSiC Coated Graphite Substrateyog ib qho kev ruaj khov thiab muaj txiaj ntsig zoo tsim los ua kom tau raws li qhov xav tau nruj ntawm kev lag luam semiconductor. Featuring ib txheej ntawm high-puritysilicon carbide (SiC) txheejQhov no substrate muab tshwj xeeb thermal stability, oxidation tsis kam, thiab ntev kev pab cuam lub neej, ua rau nws zoo tagnrho rau kev siv nyob rau hauv MOCVD txheej txheem, graphite wafer nqa, thiab lwm yam high-temperature puag ncig.

 Nta: 
· Zoo heev Thermal Shock Resistance
· Zoo heev lub cev poob siab kuj
· Cov tshuaj tiv thaiv zoo heev
· Super Siab Purity
· Muaj nyob rau hauv Complex Shape
· Siv tau nyob rau hauv Oxidizing Atmosphere

Daim ntawv thov:

3

Khoom nta thiab qhov zoo:

1. Superior Thermal Resistance:Nrog high-puritySiC txheej, lub substrate withstands huab cua kub, kom ntseeg tau zoo ib yam ntawm cov kev xav tau ib puag ncig xws li epitaxy thiab semiconductor fabrication.

2. Txhim khu kev ruaj ntseg:SiC coated graphite Cheebtsam yog tsim los tiv thaiv chemical corrosion thiab oxidation, ua rau lub substrate lifespan piv rau standard graphite substrates.

3. Vitreous Coated Graphite:Qhov tshwj xeeb vitreous qauv ntawm lubSiC txheejmuab cov tawv tawv zoo heev, txo qis hnav thiab tsim kua muag thaum ua haujlwm kub.

4. High Purity SiC Txheej:Peb cov substrate ua kom muaj kev sib kis tsawg tsawg hauv cov txheej txheem semiconductor rhiab heev, muab kev ntseeg siab rau kev lag luam uas xav tau cov khoom siv purity nruj.

5. Kev ua lag luam dav dav:CovSiC coated graphite susceptorkev ua lag luam tseem loj hlob ntxiv raws li qhov kev thov rau qib siab SiC coated cov khoom lag luam hauv semiconductor raug nce, tso lub substrate no ua tus neeg tseem ceeb hauv ob qho tib si graphite wafer cab kuj lag luam thiab silicon carbide coated graphite tais lag luam.

Yam Khoom Ntawm Base Graphite Khoom:

Pom pom Density: 1.85g / cm3
Hluav taws xob Resistivity: 11 μΩ
Flexural zog: 49 MPa (500kgf / cm2)
Ntug Hardness: 58
Tshauv: <5 ppm
Thermal conductivity: 116 W / mK (100 kcal / mhr-℃)

 

CVD SiC薄膜基本物理性能

Basic Physical Properties ntawm CVD SiCtxheej

性质 / Khoom

典型数值 / Tus nqi zoo

晶体结构 / Crystal Structure

FCC β theem 多晶,主要为 (111) 取向

密度 / Ceev

3.21 g / cm³

硬度 / Hardness

2500 维氏硬度 (500g load)

晶粒大小 / Grain SiZe

2 ~ 10 hli

纯度 / Tshuaj Purity

99.99995%

热ა / Heat Capacity

6 40j kg-1· K-1

Sublimation Temperature

2700 ℃

抗弯强度 / Flexural zog

415 MPa RT 4-point

杨氏模量 / Young's Modulus

430 Gpa 4pt khoov, 1300 ℃

Kev Siv Hluav Taws Xob / Thermal conductivity

300 Wm-1· K-1

热膨胀系数 / Thermal Expansion (CTE)

4.5 × 10-6K-1

1

2

 

 

VET Energy yog lub chaw tsim khoom tiag tiag ntawm cov khoom siv graphite thiab silicon carbide nrog cov txheej txheem sib txawv xws li SiC txheej, TaC txheej, iav carbon txheej, pyrolytic carbon txheej, thiab lwm yam., tuaj yeem muab ntau yam khoom siv rau kev lag luam semiconductor thiab photovoltaic.

Peb pab neeg ua haujlwm los ntawm cov tsev kawm tshawb fawb saum toj kawg nkaus hauv tebchaws, tuaj yeem muab cov ntaub ntawv tshaj lij tshaj lij rau koj.

Peb tsis tu ncua tsim cov txheej txheem siab heev los muab cov ntaub ntawv zoo tshaj plaws, thiab tau ua haujlwm tawm cov cuab yeej tshwj xeeb patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab cov substrate nruj dua thiab tsis tshua muaj detachment.

Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!

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