SiC Coated Graphite Carrier / Susceptor

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VET Energy SiC Coated Graphite Carrier / Susceptor yog cov khoom ua tau zoo tsim los muab kev ua tau zoo thiab txhim khu kev qha nyob rau lub sijhawm ntev. Nws muaj super zoo kub tsis kam thiab thermal uniformity, siab purity, yaig kuj, ua rau nws zoo meej tov rau wafer ua daim ntaub ntawv.

 


Product Detail

Khoom cim npe

SiC coated suscetpor yog ib qho tseem ceeb siv nyob rau hauv ntau yam semiconductor manufacturing txheej txheem. Peb siv peb cov cuab yeej patented los ua SiC coated suscetpor nrog purity siab heev, zoo txheej uniformity thiab ib tug zoo heev kev pab cuam lub neej, nrog rau cov tshuaj tiv thaiv siab thiab thermal stability.

Feature ntawm peb cov khoom:

1. Kub kub oxidation tsis kam mus txog 1700 ℃.
2. High purity thiab thermal uniformity
3. Zoo heev corrosion kuj: acid, alkali, ntsev thiab organic reagents.
4. High hardness, compact nto, zoo hais.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua

nqa 2 nqa 4

nqa 1 nqa 3

 

CVD SiC薄膜基本物理性能

Basic Physical Properties ntawm CVD SiCtxheej

性质 / Khoom

典型数值 / Tus nqi

晶体结构 / Crystal Structure

FCC β theem多晶, 主要为(111) Ib

密度 / Ceev

3.21 g / cm³

硬度 / Hardness

2500 维氏硬度 (500g load)

晶粒大小 / Grain SiZe

2 ~ 10 hli

纯度 / Tshuaj Purity

99.99995%

Cov duab / Kub Muaj Peev Xwm

6 40j kg-1· K-1

升华温度 / Sublimation kub

2700 ℃

抗弯强度 / Flexural zog

415 MPa RT 4-point

杨氏模量 / Young's Modulus

430 Gpa 4pt khoov, 1300 ℃

导热系数 / KublKev coj ua

300 Wm-1· K-1

热膨胀系数 / Thermal Expansion (CTE)

4.5 × 10-6K-1

1

2

Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!

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