SiC Coated Graphite Carrier / Susceptor

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VET Energy SiC Coated Graphite Carrier / Susceptor yog cov khoom ua tau zoo tsim los muab kev ua tau zoo thiab txhim khu kev qha nyob rau lub sijhawm ntev.Nws muaj super zoo kub tsis kam thiab thermal uniformity, siab purity, yaig kuj, ua rau nws zoo meej tov rau wafer ua daim ntaub ntawv.

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SiC coated suscetpor yog ib qho tseem ceeb siv nyob rau hauv ntau yam semiconductor manufacturing txheej txheem.Peb siv peb cov cuab yeej patented los ua SiC coated suscetpor nrog purity siab heev, zoo txheej uniformity thiab ib tug zoo heev kev pab cuam lub neej, nrog rau cov tshuaj tiv thaiv siab thiab thermal stability.

Feature ntawm peb cov khoom:

1. Kub kub oxidation tsis kam mus txog 1700 ℃.
2. High purity thiab thermal uniformity
3. Zoo heev corrosion kuj: acid, alkali, ntsev thiab organic reagents.
4. High hardness, compact nto, zoo hais.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua

CVD SiC薄膜基本物理性能 Basic Physical Properties ntawm CVD SiCtxheej
性质 / Khoom	典型数值 / Tus nqi
晶体结构 / Crystal Structure	FCC β theem多晶, 主要为(111) Ib
密度 / Ceev	3.21 g / cm³
硬度 / Hardness	2500 维氏硬度 (500g load)
晶粒大小 / Grain SiZe	2 ~ 10 hli
纯度 / Tshuaj Purity	99.99995%
Cov duab / Kub Muaj Peev Xwm	6 40j kg^-1· K^-1
升华温度 / Sublimation kub	2700 ℃
抗弯强度 / Flexural zog	415 MPa RT 4-point
杨氏模量 / Young's Modulus	430 Gpa 4pt khoov, 1300 ℃
导热系数 / KublKev coj ua	300 Wm^-1· K^-1
热膨胀系数 / Thermal Expansion (CTE)	4.5 × 10^-6K^-1