Silicon Carbide (SiC) Epitaxial Wafer

ʻO ka wehewehe pōkole:

ʻO ka Silicon Carbide (SiC) Epitaxial Wafer mai VET Energy kahi substrate hana kiʻekiʻe i hoʻolālā ʻia e hoʻokō i nā koi koi o ka mana o ka hanauna e hiki mai ana a me nā polokalamu RF. Mālama ʻo VET Energy i ka hana ʻia ʻana o kēlā me kēia wafer epitaxial e hāʻawi i ka conductivity thermal kiʻekiʻe, breakdown voltage, a me ka neʻe ʻana o ka mea lawe, e kūpono ia no nā noi e like me nā kaʻa uila, kamaʻilio 5G, a me nā uila uila kiʻekiʻe.


Huahana Huahana

Huahana Huahana

ʻO ka VET Energy silicon carbide (SiC) epitaxial wafer he mea hana kiʻekiʻe ka laulā bandgap semiconductor me ka maikaʻi o ke kūpaʻa wela kiʻekiʻe, ke alapine kiʻekiʻe a me nā ʻano mana kiʻekiʻe. He substrate kūpono ia no ka hanauna hou o nā mea uila uila. Hoʻohana ʻo VET Energy i ka ʻenehana epitaxial MOCVD kiʻekiʻe e ulu i nā papa epitaxial SiC kiʻekiʻe ma nā substrates SiC, e hōʻoiaʻiʻo ana i ka hana maikaʻi loa a me ke kūlike o ka wafer.

Hāʻawi kā mākou Silicon Carbide (SiC) Epitaxial Wafer i ka hoʻohālikelike maikaʻi loa me nā ʻano mea semiconductor like ʻole me Si Wafer, SiC Substrate, SOI Wafer, a me SiN Substrate. Me kāna papa epitaxial paʻa, kākoʻo ia i nā kaʻina hana holomua e like me ka ulu ʻana o Epi Wafer a me ka hoʻohui ʻana me nā mea e like me Gallium Oxide Ga2O3 a me AlN Wafer, e hōʻoiaʻiʻo ana i ka hoʻohana maʻamau ma waena o nā ʻenehana like ʻole. Hoʻolālā ʻia e kūlike me nā ʻōnaehana lawelawe Cassette maʻamau o ka ʻoihana, e hōʻoiaʻiʻo i nā hana maikaʻi a maʻalahi i nā wahi hana semiconductor.

ʻAʻole i kaupalena ʻia ka laina huahana o VET Energy i nā wafers epitaxial SiC. Hāʻawi pū mākou i kahi ākea o nā mea semiconductor substrate, me Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, etc. Eia kekahi, ke hoʻomohala nei mākou i nā mea semiconductor broadgap hou, e like me Gallium Oxide Ga2O3 a me AlN ʻO Wafer, e hoʻokō i nā koi o ka ʻoihana uila e hiki mai ana no nā mea hana kiʻekiʻe.

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OLELO HOOLAHA WAFERING

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

'ikamu

8-Inika

6-Iniha

4-Iniha

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Kakaka (GF3YFCD)-Waiwai Loa

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

ʻO ka beveling

PAPA IHO

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating

'ikamu

8-Inika

6-Iniha

4-Iniha

nP

n-Pm

n-Ps

SI

SI

Hoʻopau ʻili

ʻaoʻao ʻelua Optical Polish, Si- Face CMP

ʻAhaʻulaʻula

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

ʻOpi ʻEke

ʻAʻohe ʻae ʻia (lōʻihi a laula≥0.5mm)

Indents

ʻAʻole ʻae ʻia

Nā ʻōpala (Si-Face)

Ka nui.≤5, Huihui
Length≤0.5×wafer anawaena

Ka nui.≤5, Huihui
Length≤0.5×wafer anawaena

Ka nui.≤5, Huihui
Length≤0.5×wafer anawaena

māwae

ʻAʻole ʻae ʻia

Hoʻokuʻu Edge

3mm

tech_1_2_size
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