ʻO ka VET Energy silicon carbide (SiC) epitaxial wafer he mea hana kiʻekiʻe ka laulā bandgap semiconductor me ka maikaʻi o ke kūpaʻa wela kiʻekiʻe, ke alapine kiʻekiʻe a me nā ʻano mana kiʻekiʻe. He substrate kūpono ia no ka hanauna hou o nā mea uila uila. Hoʻohana ʻo VET Energy i ka ʻenehana epitaxial MOCVD kiʻekiʻe e ulu i nā papa epitaxial SiC kiʻekiʻe ma nā substrates SiC, e hōʻoiaʻiʻo ana i ka hana maikaʻi loa a me ke kūlike o ka wafer.
Hāʻawi kā mākou Silicon Carbide (SiC) Epitaxial Wafer i ka hoʻohālikelike maikaʻi loa me nā ʻano mea semiconductor like ʻole me Si Wafer, SiC Substrate, SOI Wafer, a me SiN Substrate. Me kāna papa epitaxial paʻa, kākoʻo ia i nā kaʻina hana holomua e like me ka ulu ʻana o Epi Wafer a me ka hoʻohui ʻana me nā mea e like me Gallium Oxide Ga2O3 a me AlN Wafer, e hōʻoiaʻiʻo ana i ka hoʻohana maʻamau ma waena o nā ʻenehana like ʻole. Hoʻolālā ʻia e kūlike me nā ʻōnaehana lawelawe Cassette maʻamau o ka ʻoihana, e hōʻoiaʻiʻo i nā hana maikaʻi a maʻalahi i nā wahi hana semiconductor.
ʻAʻole i kaupalena ʻia ka laina huahana o VET Energy i nā wafers epitaxial SiC. Hāʻawi pū mākou i kahi ākea o nā mea semiconductor substrate, me Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, etc. Eia kekahi, ke hoʻomohala nei mākou i nā mea semiconductor broadgap hou, e like me Gallium Oxide Ga2O3 a me AlN ʻO Wafer, e hoʻokō i nā koi o ka ʻoihana uila e hiki mai ana no nā mea hana kiʻekiʻe.
OLELO HOOLAHA WAFERING
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
'ikamu | 8-Inika | 6-Iniha | 4-Iniha | ||
nP | n-Pm | n-Ps | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Kakaka (GF3YFCD)-Waiwai Loa | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | ʻO ka beveling |
PAPA IHO
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulating
'ikamu | 8-Inika | 6-Iniha | 4-Iniha | ||
nP | n-Pm | n-Ps | SI | SI | |
Hoʻopau ʻili | ʻaoʻao ʻelua Optical Polish, Si- Face CMP | ||||
ʻAhaʻulaʻula | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
ʻOpi ʻEke | ʻAʻohe ʻae ʻia (lōʻihi a laula≥0.5mm) | ||||
Indents | ʻAʻole ʻae ʻia | ||||
Nā ʻōpala (Si-Face) | Ka nui.≤5, Huihui | Ka nui.≤5, Huihui | Ka nui.≤5, Huihui | ||
māwae | ʻAʻole ʻae ʻia | ||||
Hoʻokuʻu Edge | 3mm |