ʻO ka uhi ʻana o SiC / uhi ʻia o ka substrate Graphite no Semiconductor, Graphite Trays, Sic Graphite epitaxy susceptors

ʻO ka wehewehe pōkole:


  • Kahi i kumu:Zhejiang, Kina (Mainland)
  • Helu kumu hoʻohālike:Helu kumu hoʻohālike:
  • Huina Kemika:graphite i uhi ʻia ʻo SiC
  • Ka ikaika wiliwili:470Mpa
  • ʻO ke kau wela wela:300 W/mK
  • ʻAno maikaʻi:hemolele
  • Hana:CVD-SiC
  • Noi:Semiconductor /Photovoltaic
  • ʻAiʻa:3.21 g/cc
  • Hoʻonui wela:4 10-6/K
  • lehu: <5ppm
  • Laʻana:Loaʻa
  • HS Code:6903100000
  • Huahana Huahana

    Huahana Huahana

    ʻO ka uhi SiC / uhi ʻia o ka substrate Graphite no Semiconductor,Nā Paʻi Graphite,SicNā mea hoʻopili epitaxy graphite,
    Hāʻawi ke kalapona i nā mea mālama, Nā mea hoʻopili epitaxy graphite, Nā mea kākoʻo graphite, Nā Paʻi Graphite, SiC Epitaxy,
    ʻO nā mea lawe graphite i uhi ʻia ʻo SiC

    Hōʻike huahana

    Mālama mākou i ka hoʻomanawanui ʻana i ka wā e hoʻohana ai i ka uhi SiC, me ka hoʻohana ʻana i ka mīkini kiʻekiʻe kiʻekiʻe e hōʻoia i kahi ʻano like ʻole susceptor profile. Hoʻopuka pū mākou i nā mea me nā waiwai pale uila kūpono no ka hoʻohana ʻana i nā ʻōnaehana inductively. Hele mai nā ʻāpana hoʻopau a pau me ka palapala hoʻokō maʻemaʻe a me ka dimensional.

    Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC. ʻO ka SIC i hoʻokumuʻia ua paʻa paʻa i ka graphite base, e hāʻawi ana i ka graphite base waiwai kūikawā, pēlā e hana ai i kaʻili o ka graphite compact, Porosity-free, kiʻekiʻe o ka mahana wela, ke kū'ēʻana a me ke kū'ēʻana.

    Hāʻawi ke kaʻina hana CVD i ka maʻemaʻe kiʻekiʻe loa a me ka nui o ka manaʻo o ka uhi SiC me ka porosity ʻole. ʻO ka mea ʻē aʻe, ʻoiai he paʻakikī loa ka carbide silika, hiki ke hoʻomaʻamaʻa ʻia i ka ʻili e like me ke aniani. Hāʻawi ʻo CVD silicon carbide (SiC) coating i nā pono he nui e pili ana i ka ʻili maʻemaʻe ultra-kiʻekiʻe a me ka lōʻihi loa. Ma muli o ka hana nui o nā huahana i uhi ʻia i ka vacuum kiʻekiʻe a me ke kūlana wela kiʻekiʻe, kūpono lākou no nā noi i ka ʻoihana semiconductor a me nā wahi ultra-maʻemaʻe. Hāʻawi pū mākou i nā huahana pyrolytic graphite (PG).

    Nā hiʻohiʻona nui:

    1. Kiʻekiʻe wela oxidation kū'ē:

    ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.

    2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.

    3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.

    4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

    ʻO nā kikoʻī nui o ka CVD-SIC Coatings:

    SiC-CVD

    ʻO ka mānoanoa

    (g/cc)

    3.21

    Ka ikaika wiliwili

    (Mpa)

    470

    Hoʻonui wela

    (10-6/K)

    4

    ʻO ke kau wela wela

    (W/mK)

    300

    Noi: Ua hoʻohana mua ʻia ka uhi ʻana o ka silicon carbide CVD i nā ʻoihana semiconductor, e like me ka MOCVD tray, RTP a me ke keʻena etching oxide mai ka silicon nitride i ke kūpaʻa wela wela a hiki ke kū i ka plasma ikehu kiʻekiʻe.
    -Hoʻohana nui ʻia ka silicon carbide i ka semiconductor a me ka uhi.

    Hiki ke hoolako:

    10000 ʻāpana / ʻāpana i kēlā me kēia mahina
    Puke a me ka lawe ʻana:
    Hoʻopili: Kūʻai maʻamau & ikaika
    ʻeke poli + pahu + pahu pahu + pallet
    Awa:
    Ningbo/Shenzhen/Shanghai
    Ka manawa o waena o ka hoʻomaka a i ka wā pau:

    Nui (Nā ʻāpana) 1 – 1000 >1000
    Est. Manawa(lā) 15 E kūkākūkā ʻia

     

    ʻIkepili Hui

    111

    Na Lako Hale Hana

    222

    Halekuai

    333

    Nā palapala hōʻoia

    Nā palapala hōʻoia22

    nīnau nīnau

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