ʻO ka uhi ʻana o SiC/i uhi ʻia o ka substrate Graphite no Semiconductor, Graphite Trays, Sic Graphiteepitaxy susceptors,
Hāʻawi ke kalapona i nā mea mālama, epitaxy susceptors, Nā mea kākoʻo graphite, SiC Epitaxy, kākoʻo substrates,
ʻO nā mea lawe graphite i uhi ʻia ʻo SiC

Mālama mākou i ka hoʻomanawanui ʻana i ka wā e hoʻohana ai i ka uhi SiC, me ka hoʻohana ʻana i ka mīkini kiʻekiʻe kiʻekiʻe e hōʻoia i kahi ʻano like ʻole susceptor profile.Hoʻopuka pū mākou i nā mea me nā waiwai pale uila kūpono no ka hoʻohana ʻana i nā ʻōnaehana inductively.Hele mai nā ʻāpana a pau me ka palapala hoʻokō maʻemaʻe a me ka dimensional.

Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC.Hoʻopili paʻa ʻia ka SIC i hoʻokumu ʻia i ka base graphite, e hāʻawi ana i ka graphite base i nā waiwai kūikawā, pēlā e hana ai i ka ʻili o ka graphite compact, Porosity-free, kiʻekiʻe wela ke kū ʻana, ka pale ʻana i ka corrosion a me ka pale oxidation.

Hāʻawi ke kaʻina hana CVD i ka maʻemaʻe kiʻekiʻe loa a me ka nui o ka manaʻo o ka uhi SiC me ka porosity ʻole.ʻO ka mea ʻē aʻe, ʻoiai he paʻakikī loa ka carbide silika, hiki ke hoʻomaʻamaʻa ʻia i ka ʻili e like me ke aniani.Hāʻawi ʻo CVD silicon carbide (SiC) i nā pono he nui e pili ana i ka ʻili maʻemaʻe ultra-kiʻekiʻe a me ka lōʻihi o ka lole.Ma muli o ka hana nui o nā huahana i uhi ʻia i ka vacuum kiʻekiʻe a me ke kūlana wela kiʻekiʻe, kūpono lākou no nā noi i ka ʻoihana semiconductor a me nā wahi ultra-maʻemaʻe.Hāʻawi pū mākou i nā huahana pyrolytic graphite (PG).

Nā hiʻohiʻona nui:

1. Kiʻekiʻe wela oxidation kū'ē:

ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.

2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.

3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.

4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

ʻO nā kikoʻī nui o ka CVD-SIC Coatings:

Noi: Ua hoʻohana mua ʻia ka uhi ʻana o ka silicon carbide CVD i nā ʻoihana semiconductor, e like me ka MOCVD tray, RTP a me ke keʻena etching oxide mai ka silicon nitride i ke kūpaʻa wela wela a hiki ke kū i ka plasma ikehu kiʻekiʻe.
-Hoʻohana nui ʻia ka silicon carbide i ka semiconductor a me ka uhi.

Hiki ke hoolako:

10000 ʻāpana / ʻāpana i kēlā me kēia mahina
Puke a me ka lawe ʻana:
Hoʻopili: Kūʻai maʻamau & ikaika
ʻeke poli + pahu + pahu pahu + pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:

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