Hoʻopilikino ʻia ʻo SiC Coated Barrel Susceptor

ʻO ka wehewehe pōkole:

Hoʻomohala mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua, a ua hana mākou i kahi ʻenehana patented kūʻokoʻa, hiki ke hoʻoikaika i ka paʻa ʻana ma waena o ka uhi a me ka substrate a ʻoi aku ka liʻiliʻi o ka wehe.

E hoʻouna i ka leka uila iā mākou Hoʻoiho ma ke ʻano he PDF

Huahana Huahana

Barela hoʻopili is a kīʻāpana i hoʻohana ʻia i nā kaʻina hana semiconductor.Hoʻohana mākou i kā mākou ʻenehana patented e hana i kabarrel susceptormeka maemae loa,maikaʻi loaka uhi ʻanalokahia me kahi ola lawelawe maikaʻi loa, a ʻo kekahikiʻekiʻe kemika kū'ē a me ka wela paʻa waiwai.

ʻO VET Energy ka kamea hana maoli o ka graphite maʻamau a me nā huahana silicon carbide me ka uhi CVD,hiki ke hoolakoʻokoʻanā ʻāpana i hana ʻia no ka semiconductor a me ka ʻoihana photovoltaic. OʻO kāu hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā ʻoihana ʻoihana ʻoi aku ka nuināu.

Hoʻomau mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua,aUa hana ʻo ia i kahi ʻenehana patented kūʻokoʻa, hiki iā ia ke hana i ka hoʻopaʻa ʻana ma waena o ka uhi a me ka substrate i ʻoi aku ka paʻa a emi ʻole i ka wehe.

Fnā ʻano o kā mākou huahana:

1. Kiʻekiʻe wela oxidation kū'ē a hiki i 1700℃.
2. Maʻemaʻe kiʻekiʻe ahoʻolikelike wela
3. ʻOi aku ka maikaʻi o ka corrosion resistance: acid, alkali, paʻakai a me nā mea hoʻohui.
4. ʻO ka paʻakikī kiʻekiʻe, ka ʻili paʻa, nā ʻāpana maikaʻi.
5. ʻOi aku ka lōʻihi o ke ola a ʻoi aku ka lōʻihi

CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCka uhi ʻana
性质 / Waiwai	典型数值 / Waiwai maʻamau
晶体结构 / Hoʻomoe Crystal	Māhele FCC β多晶，主要为（111）取向
密度 / Paʻa	3.21 g/cm³
硬度 / Oolea	2500 维氏硬度（500g load）
晶粒大小 / ʻAiʻa palaoa	2~10μm
纯度 / Maemae Kemika	99.99995%
热容 / Hikina Wela	640 J·kg^-1·K^-1
升华温度 / Kaumaha Sublimation	2700 ℃
抗弯强度 / Ka Ikaika Pilikia	415 MPa RT 4-point
杨氏模量 / 'Ōpio's Modulus	430 Gpa 4pt piko, 1300 ℃
导热系数 / ThermalʻO ka hoʻokō	300W·m^-1·K^-1
热膨胀系数 / Hoʻonui wela (CTE)	4.5×10^-6K^-1