ʻO ka maikaʻi maikaʻi Silicon Carbide RBSIC/SISIC Cantilever Paddle Hoʻohana ʻia i ka ʻoihana Photovoltaic Solar

ʻO ka wehewehe pōkole:

ʻO nā pōmaikaʻi kūikawā o kā mākou mau mea hoʻopili graphite i uhi ʻia ʻo SiC me ka maʻemaʻe kiʻekiʻe loa, ka uhi homogenous a me ke ola lawelawe maikaʻi loa. Loaʻa iā lākou ke kūpaʻa kemika kiʻekiʻe a me nā waiwai paʻa wela.

Mālama mākou i ka hoʻomanawanui loa i ka wā e hoʻohana ai i ka uhi SiC, me ka hoʻohana ʻana i ka mīkini kiʻekiʻe kiʻekiʻe e hōʻoiaʻiʻo i kahi ʻano susceptor kūlike. Hoʻopuka pū mākou i nā mea me nā waiwai pale uila kūpono no ka hoʻohana ʻana i nā ʻōnaehana inductively. Hele mai nā ʻāpana a pau me ka palapala hoʻokō maʻemaʻe a me ka dimensional.


Huahana Huahana

Huahana Huahana

ʻO nā mea hana maikaʻi, nā poʻe loea akamai, a ʻoi aku ka maikaʻi ma hope o ke kūʻai aku ʻana i nā huahana a me nā lawelawe; Ua hui pū ʻia mākou he kāne nui a me nā keiki, pili kēlā me kēia kanaka i ka ʻoihana i ka pōmaikaʻi "hoʻohui, hoʻolaʻa, hoʻomanawanui" no ka maikaʻi Silicon Carbide RBSIC/SISIC Cantilever Paddle i hoʻohana ʻia i ka Solar Photovoltaic Industry. nā hoa ʻoihana ʻoihana, a manaʻolana e hana pū me ʻoe i kahi kokoke i ka wā lōʻihi!
ʻO nā mea hana maikaʻi, nā poʻe loea akamai, a ʻoi aku ka maikaʻi ma hope o ke kūʻai aku ʻana i nā huahana a me nā lawelawe; Ua hui pū ʻia mākou he kāne nui a me nā keiki, pili kēlā me kēia kanaka i ka ʻoihana e pōmaikaʻi "hoʻohui, hoʻolaʻa, hoʻomanawanui"Kina Refractory ceramic a me ceramic kiln, No ka hoʻokō ʻana i nā koi o nā mea kūʻai aku no kēlā me kēia lawelawe ʻoi aku ka maikaʻi a me nā mea paʻa paʻa. Hoʻokipa maikaʻi mākou i nā mea kūʻai aku a puni ka honua e kipa mai iā mākou, me kā mākou hui like ʻole, a hui pū i nā mākeke hou, hana i kahi wā e hiki mai ana!

ʻO ka uhi SiC / uhi ʻia o ka substrate Graphite no Semiconductor
 
Hoʻopaʻa ʻia nā mea susceptors a hoʻomehana i nā wafers semiconductor i ka wā o ka hana wela. Hana ʻia kahi susceptor me kahi mea e hoʻomoʻa i ka ikehu ma o ka hoʻokomo ʻana, ka hoʻoheheʻe ʻana, a/a i ʻole ka radiation a hoʻomehana i ka wafer. He mea koʻikoʻi kona kūpaʻa haʻalulu wela, ka hoʻoheheʻe wela, a me ka maʻemaʻe i ka hoʻoili wela wikiwiki (RTP). Hoʻohana pinepine ʻia ka graphite silicon carbide, silicon carbide (SiC), a me silicon (Si) no nā susceptors ma muli o ke ʻano wela a me ke kemika. ʻO PureSiC® CVD SiC a me ClearCarbon™ ultra-pure mea e hāʻawi ai i ke kūpaʻa wela ʻoi aku ka maikaʻi, ka pale ʻana i ka corrosion, a me ka lōʻihi.
Hōʻike huahana

ʻO ka uhi SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kū'ē i ka lewa oxidizing.
Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.

ʻO ka uhi SiC / uhi ʻia o ka substrate Graphite no Semiconductor

He koho kūlohelohe nā seramika ʻenehana no nā noi hoʻoili wela semiconductor me RTP (Rapid Thermal Processing), Epi (Epitaxial), diffusion, oxidation, a me ka annealing. Hāʻawi ʻo CoorsTek i nā ʻāpana waiwai holomua i hoʻolālā ʻia e kū i nā haʻalulu wela me ka maʻemaʻe kiʻekiʻe, ikaika, hana hou ʻia no ka wela kiʻekiʻe.

 Nā hiʻohiʻona: 
· ʻOi loa ka Thermal Shock Resistance
· Kūleʻa haʻalulu kino maikaʻi
· Kūʻē Kemika maikaʻi loa
· Maʻemaʻe Kiʻekiʻe
· Loaʻa ma ke ʻano paʻakikī
· Hoʻohana ma lalo o ka Oxidizing Atmosphere

noi:

3

Pono e hele ka wafer ma mua o ka mākaukau no ka hoʻohana ʻana i nā mea uila. ʻO kekahi kaʻina hana koʻikoʻi ʻo ka epitaxy silika, kahi e lawe ʻia ai nā wafers ma luna o nā susceptors graphite. ʻO nā waiwai a me ka maikaʻi o nā susceptors he hopena koʻikoʻi i ka maikaʻi o ka papa epitaxial o ka wafer.

Nā ʻano maʻamau o ka Material Graphite Base:

ʻIke ʻia ka mānoanoa: 1.85 g/cm3
Ke kū'ē uila: 11 μΩm
ʻO ke koʻikoʻi ʻoluʻolu: 49 MPa (500kgf/cm2)
Paʻa Paʻa: 58
lehu: <5ppm
ʻO ka wela wela: 116 W/mK (100 kcal/mhr- ℃)

 

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