ʻO ka waʻa kristal Silicon Carbide Recrystallized no ka ʻoihana Semiconductor

ʻO ka wehewehe pōkole:

ʻO VET Energy Recrystallized Silicon Carbide Crystal Boat kahi huahana hana kiʻekiʻe i hoʻolālā ʻia e hāʻawi i ka hana kūpaʻa a hilinaʻi hoʻi i kahi manawa lōʻihi.Loaʻa iā ia ke kūpaʻa wela maikaʻi loa a me ka like ʻana o ka wela, ka maʻemaʻe kiʻekiʻe, ka pale ʻana i ka erosion, e hana ana i ka hopena kūpono no nā noi hana wafer.


Huahana Huahana

Huahana Huahana

Nā waiwai o ka carbide silika i hoʻopaʻa hou ʻia

ʻO ka carbide silicon recrystallized (R-SiC) he mea hana kiʻekiʻe me ka paʻakikī lua wale nō i ke daimana, i hana ʻia ma kahi wela kiʻekiʻe ma luna o 2000 ℃.Mālama ia i nā waiwai maikaʻi he nui o SiC, e like me ka ikaika wela kiʻekiʻe, ke kūpaʻa ʻana i ka corrosion ikaika, ke kūpaʻa oxidation maikaʻi loa, ke kūpaʻa haʻalulu maikaʻi a pēlā aku.

● ʻO nā mea mechanical maikaʻi loa.ʻO ka carbide silicon recrystallized he kiʻekiʻe aʻe ka ikaika a me ka ʻoʻoleʻa ma mua o ke kalapona kalapona, ke kūpaʻa hopena kiʻekiʻe, hiki ke pāʻani i ka hana maikaʻi i nā wahi wela wela, hiki ke pāʻani i ka hana counterbalance maikaʻi i nā ʻano kūlana.Eia kekahi, loaʻa iā ia ka maʻalahi maikaʻi a ʻaʻole maʻalahi i ka pōʻino e ka hoʻolōʻihi ʻana a me ke kulou ʻana, kahi e hoʻomaikaʻi nui ai i kāna hana.

● Kiʻekiʻe corrosion kū'ē.ʻO ka carbide silicon recrystallized he kiʻekiʻe ka corrosion kū'ē i nāʻano media likeʻole, hiki ke pale i ka erosion o nāʻano media corrosive, hiki ke mālama i kona mau mea mechanical no ka manawa lōʻihi, he paʻa ikaika, iʻoi aku ka lōʻihi o ke ola.Eia kekahi, loaʻa iā ia ka paʻa wela maikaʻi, hiki ke hoʻololi i kekahi ʻano o nā loli wela, hoʻomaikaʻi i kāna hopena noi.

● ʻAʻole e emi ka sintering.No ka emi ʻole o ke kaʻina hana sintering, ʻaʻohe koʻikoʻi koena e hoʻoneʻe i ka deformation a i ʻole ka haki ʻana o ka huahana, a hiki ke hoʻomākaukau ʻia nā ʻāpana me nā ʻano paʻakikī a me ka pololei kiʻekiʻe.

IMG_9497
IMG_9503

重结晶碳化硅物理特性

Nā waiwai kino o Recrystallized Silicon Carbide

性质 / Waiwai

典型数值 / Waiwai maʻamau

使用温度/ Mahana hana (°C)

1600°C (me ka oxygen), 1700°C (hoemi kaiapuni)

SiC含量/ maʻiʻo SiC

> 99.96%

自由Si含量/ Maikaʻi Si manuahi

< 0.1%

体积密度/ʻAno nui

2.60-2.70 g/cm3

气孔率/ ʻIke ʻia ka porosity

< 16%

抗压强度/ Ka ikaika hoʻoemi

> 600MPa

常温抗弯强度/Ka ikaika kulou anu

80-90 MPa (20°C)

高温抗弯强度Ka ikaika piko wela

90-100 MPa (1400°C)

热膨胀系数/ Hoʻonui wela @1500°C

4.70 10-6/°C

导热系数/ʻO ka wela wela @1200°C

23W/m•K

杨氏模量/ Modulus elastic

240 GPa

抗热震性/ Ke pale ʻana i ka haʻalulu wela

Maikaʻi loa

ʻO VET Energy ka mea hana maoli o nā huahana graphite a me nā huahana silicon carbide me ka uhi CVD, hiki ke hoʻolako i nā ʻāpana like ʻole no ka semiconductor a me ka ʻoihana photovoltaic.Hele mai kā mākou hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki iā ia ke hāʻawi i nā hoʻonā ʻoihana ʻoihana hou aku no ʻoe.

Hoʻomohala mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua, a ua hana mākou i kahi ʻenehana patented kūʻokoʻa, hiki ke hoʻoikaika i ka paʻa ʻana ma waena o ka uhi a me ka substrate a ʻoi aku ka liʻiliʻi o ka wehe.

Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!

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