SiC Coated Graphite Carriers, sic coating, SiC coating coated o Graphite substrate no Semiconductor

Ua uhi ʻia ʻo Silicon carbideʻO ka graphite disk ka mea e hoʻomākaukau ai i ka papa pale silicon carbide ma ka ʻili o ka graphite ma ke kino a i ʻole ka hoʻoheheʻe ʻana i ka mahu a me ka pulupulu ʻana. Hiki ke hoʻopaʻa paʻa ʻia ka papa pale silicon carbide i hoʻopaʻa ʻia i ka matrix graphite, e hana ana i ka ʻili o ka base graphite paʻa a me ka ʻole o nā voids, e hāʻawi ana i ka graphite matrix nā waiwai kūikawā, me ka pale ʻana o ka oxidation, ka waikawa a me ke kūpaʻa alkali, erosion resistance, corrosion resistance, etc. I kēia manawa, ʻo Gan coating kekahi o nā ʻāpana kumu maikaʻi loa no ka ulu ʻana o ka epitaxial o ka silicon carbide.

351-21022GS439525

 

ʻO Silicon carbide semiconductor ka mea nui o ka semiconductor ākea ākea hou. Loaʻa i kāna mau mea hana nā hiʻohiʻona o ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa uila kiʻekiʻe, ke alapine kiʻekiʻe, ka mana kiʻekiʻe a me ka pale radiation. Loaʻa iā ia nā pōmaikaʻi o ka hoʻololi wikiwiki a me ka hana kiʻekiʻe. Hiki iā ia ke hōʻemi nui i ka hoʻohana mana huahana, hoʻomaikaʻi i ka hoʻololi ʻana i ka ikehu a hoʻemi i ka nui o ka huahana. Hoʻohana nui ʻia ia i ka kamaʻilio 5g, ka pale aupuni a me ka ʻoihana koa ʻO ke kahua RF i hōʻike ʻia e ka aerospace a me ke kahua uila uila i hōʻike ʻia e nā kaʻa ikehu hou a me nā "ʻenehana hou" i maopopo a nui nā manaʻo mākeke ma nā kahua kīwila a me nā pūʻali koa.

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ʻO Silicon carbide substrate ka mea nui o ka semiconductor ākea ākea hou. Hoʻohana nui ʻia ka substrate Silicon carbide i ka uila uila microwave, ka uila uila a me nā māla ʻē aʻe. Aia ia ma ka ʻaoʻao mua o ke kaulahao ʻoihana semiconductor ākea ākea a ʻo ia ka mea ʻoki a me ke kumu kumu kumu. Hiki ke hoʻokaʻawale ʻia ka substrate Silicon carbide i ʻelua ʻano: semi insulating a conductive. Ma waena o lākou, he kiʻekiʻe ka resistivity i ka semi insulating silicon carbide substrate (resistivity ≥ 105 Ω· cm). Hiki ke hoʻohana ʻia ka semi insulating substrate me ka heterogeneous gallium nitride epitaxial sheet e like me ke ʻano o nā mea RF, i hoʻohana nui ʻia i ka kamaʻilio 5g, ka pale aupuni a me ka ʻoihana koa i nā hiʻohiʻona ma luna; ʻO ka mea ʻē aʻe ʻo conductive silicon carbide substrate me ka resistivity haʻahaʻa (ʻo ka laulā resistivity he 15 ~ 30m Ω· cm). Hiki ke hoʻohana ʻia ka epitaxy homogeneous o conductive silicon carbide substrate a me ka silicon carbide i mea waiwai no nā mea mana. ʻO nā hiʻohiʻona noi nui nā kaʻa uila, nā ʻōnaehana mana a me nā kahua ʻē aʻe


Ka manawa hoʻouna: Feb-21-2022
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